Search Results - "Lošťák, P."

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    Significant suppression of ferromagnetism by hydrostatic pressure in the diluted magnetic semiconductor Sb2−xVxTe3 with x⩽0.03 by Dyck, J. S., Mitchell, T. J., Luciana, A. J., Quayle, P. C., Drašar, Č., Lošťák, P.

    Published in Applied physics letters (17-09-2007)
    “…The authors report on the hydrostatic pressure dependence of the magnetotransport properties of ferromagnetic Sb2−xVxTe3 single crystals with x=0.02–0.03…”
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    Journal Article
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    Enhanced Thermoelectric Performance of n-type Bi2O2Se Ceramics Induced by Ge Doping by Ruleova, P., Plechacek, T., Kasparova, J., Vlcek, M., Benes, L., Lostak, P., Drasar, C.

    Published in Journal of electronic materials (01-02-2018)
    “…Ceramic samples with the composition Bi 2− x Ge x O 2 Se 1.01 ( x  = 0, 0.05, 0.075, and 0.1) were synthesized by solid-state reaction and compacted using a…”
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    Journal Article
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    Preparation and Transport Properties of Bi2O2Se Single Crystals by Drasar, C., Ruleova, P., Benes, L., Lostak, P.

    Published in Journal of electronic materials (01-09-2012)
    “…Bi 2 O 2 Se single crystals were grown by a gas-phase transport reaction with a temperature gradient. X-ray diffraction revealed that the products crystallized…”
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    Journal Article
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    Substantial pressure effect on the resistivity and Curie temperature for the diluted magnetic semiconductor Sb2-x Vx Te3 by Dyck, J. S., Ahilan, K., Aronson, M. C., Uher, C., Lošťák, P.

    Published in Physica Status Solidi (b) (01-07-2006)
    “…The influence of hydrostatic pressure on the electrical resistivity ρ and ferromagnetic transition temperature T C of bulk, single crystal Sb1–x Vx Te3 with x…”
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    Journal Article
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    Doping and Defect Structure of Tetradymite-Type Crystals by Drasar, C., Lostak, P., Uher, C.

    Published in Journal of electronic materials (01-09-2010)
    “…Nonstoichiometry of tetradymite-type crystals A 2 V B 3 VI that are grown from stoichiometric melts leads to the formation of native defects in the crystal…”
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    Journal Article Conference Proceeding
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    Thermoelectric properties and nonstoichiometry of GaGeTe by Drasar, C., Kucek, V., Benes, L., Lostak, P., Vlcek, M.

    Published in Journal of solid state chemistry (01-09-2012)
    “…Polycrystalline samples of composition Ga1+xGe1−xTe (x=−0.03÷0.07) and GaGeTe1−y (y=−0.02÷0.02) were synthesized from elements of 5N purity using a solid state…”
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    Journal Article
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    Thermoelectric properties of Tl-doped Bi2Se3 single crystals by Janicek, P, Drasar, C, Benes, L, Los{/giflibrary//tcaron gif}ak, P

    Published in Crystal research and technology (1979) (01-05-2009)
    “…The single crystals of the ternary system based on Bi2‐xTlxSe3 (nominaly x = 0.0‐0.1) were prepared using the Bridgman technique. Samples with varying content…”
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    Journal Article
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    Transport, magnetic, optical and thermodynamic properties of Bi2-xMnxSe3 single crystals by JANICEK, P, DRASAR, C, LOST'AK, P, VEJPRAVOVA, J, SECHOVSKY, V

    Published in Physica. B, Condensed matter (01-10-2008)
    “…Single crystals of Bi2Se3 doped with Mn (cMn=0-3.0X1019 atoms/cm3) were grown using a modified Bridgman method. The prepared samples were characterized by…”
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    Journal Article
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    Tuning the free electron concentration in Sr-doped Bi2Se3 by Ruleova, P., Drasar, C., Krejcova, A., Benes, L., Horak, J., Lostak, P.

    “…Single crystals of Bi2Se3 doped with strontium were grown from high purity elements. The prepared single crystals were characterized using x-ray diffraction…”
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    Journal Article
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    Thermoelectric Power and Scattering of Carriers in Bi2-xSnxTe3 with Layered Structure by Kulbachinskii, V. A., Negishi, H., Sasaki, M., Giman, Y., Inoue, M., Losták, P., Horák, J.

    Published in physica status solidi (b) (01-02-1997)
    “…Thermoelectric power, electrical resistivity, and Hall effect of p‐type Bi2—xSnxTe3 (0 ≤ x ≤ 0.030) single crystals have been measured in the temperature range…”
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    Journal Article
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    Structural defects in Cu-doped Bi2Te3 single crystals by Bludská, J., Jakubec, I., Drašar, Č., Lošťák, P., Horák, J.

    Published in Philosophical magazine (Abingdon, England) (11-01-2007)
    “…The relation between the concentration of free charge carriers and the concentration of copper atoms in Bi 2 Te 3 single crystals doped with copper over a wide…”
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    Journal Article
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    High room-temperature figure of merit of thin layers prepared by laser ablation from Bi2Te3 target by Walachová, J., Zeipl, R., Zelinka, J., Malina, V., Pavelka, M., Jelínek, M., Studnička, V., Lošt’ák, P.

    Published in Applied physics letters (22-08-2005)
    “…The figure of merit ZT is measured by a Harman method on simple devices prepared on single thermoelectric layers of different thicknesses. The thermoelectric…”
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    Journal Article
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    Defects in Bi2Te3-xSex single crystals by Lost'ak, P, Drasar, C, Bachan, D, Benes, L, Krejcova, A

    Published in Radiation effects and defects in solids (01-03-2010)
    “…Single crystals of a ternary system based on Bi2Te3-xSex (nominally x=0.0-0.2) were prepared using the Bridgman technique. Samples with varying content of Se…”
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    Journal Article
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    Defect structure of Pb-doped Bi2Te3 single crystals by Plechacek, T, Navratil, J, Horak, J, Lost'ak, P

    Published in Philosophical magazine (Abingdon, England) (21-07-2004)
    “…Pb-doped Bi 2 Te 3 single crystals with a Pb concentration of c Pb = 0−9.4 ×  10 25  m −3 were prepared from the elements Bi, Pb and Te of 99.999% purity by…”
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    Journal Article
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    Point and structural defects in Bi2PbxTe3 single crystals by Plechacek, T, Navratil, J, Horak, J, Bachan, D, Krejciiova, A, Lostak, P

    Published in Solid state ionics (15-01-2007)
    “…The study of the doping process of Bi2Te3 by Pb atoms in wide range of lead concentration ((1.0-80.0)X1018cm-3) revealed two distinct areas of influence of the…”
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    Journal Article
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    Properties of Bi2Se3 Single Crystals Doped with Fe Atoms by LOSTAK, P, DRASAR, C, KLICHOVA, I, NAVRATIL, J, CERNOHORSKY, T

    Published in Physica status solidi. B. Basic research (01-03-1997)
    “…Iron‐doped Bi2Se3 single crystals (cFe = 0 to 5.3 × 1019 atoms cm−3) were prepared by a modified Bridgman method from elements of 5N purity. The obtained…”
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    Journal Article