Electroreflectance study of macroporous silicon surfaces

The surfaces of a number of samples of macroporous silicon were characterized by electroreflectance spectroscopy. Specimens with pore diameters of 1–15 μm and pore depths from 15 to 80 μm were prepared by electrochemical etching with different values of current and bias. Etching enriches n-type sili...

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Bibliographic Details
Published in:	Applied surface science Vol. 172; no. 3; pp. 214 - 219
Main Authors:	Holiney, R.Yu, Matveeva, L.A, Venger, E.F, Livinenko, A.O, Karachevtseva, L.A
Format:	Journal Article
Language:	English
Published:	Amsterdam Elsevier B.V 15-03-2001 Elsevier Science
Subjects:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Electromagnetic waves Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electroreflectance spectroscopy Exact sciences and technology Fundamental areas of phenomenology (including applications) Macroporous silicon Optical materials Optics Photonic bandgap materials Physics Surface and interface electron states Surface states, band structure, electron density of states Macroporous silicon 42.70Q Electroreflectance spectroscopy Electromagnetic waves 73.20 Electronic structure Inorganic compounds Photonic band gap Semiconductor thin films Electrical resistivity Electric field effects n-type conductors Electrooptical material Silicon Electroreflectance Crystal faces Experimental study
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Summary:	The surfaces of a number of samples of macroporous silicon were characterized by electroreflectance spectroscopy. Specimens with pore diameters of 1–15 μm and pore depths from 15 to 80 μm were prepared by electrochemical etching with different values of current and bias. Etching enriches n-type silicon with majority carriers, and the existence of an intrinsic electric field is demonstrated. The intrinsic field develops due to the growth of an oxide layer on the pore walls. Correlation between the etching current and physical characteristics such as the phenomenological broadening parameter Γ, the magnitude of the intrinsic electric field, and the electro-optic energy is shown.
ISSN:	0169-4332 1873-5584
DOI:	10.1016/S0169-4332(00)00861-8