Search Results - "Liverini, V"
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Comparative analysis of quantum cascade laser modeling based on density matrices and non-equilibrium Green's functions
Published in Applied physics letters (08-09-2014)“…We study the operation of an 8.5 μm quantum cascade laser based on GaInAs/AlInAs lattice matched to InP using three different simulation models based on…”
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Journal Article -
2
Room-temperature transverse-electric polarized intersubband electroluminescence from InAs/AlInAs quantum dashes
Published in Applied physics letters (24-12-2012)“…We report the observation of transverse electric polarized electroluminescence from InAs/AlInAs quantum dash quantum cascade structures up to room temperature…”
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3
Current quantization in an optically driven electron pump based on self-assembled quantum dots
Published in Nature physics (01-05-2011)“…The electronic structure of self-assembled semiconductor quantum dots consists of discrete atom-like states that can be populated with a well-defined number of…”
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4
Semiconductor saturable absorber mirror structures with low saturation fluence
Published in Applied physics. B, Lasers and optics (01-07-2005)“…We present two novel semiconductor saturable absorber mirror (SESAM) designs which can exhibit more than ten times lower saturation fluence than classical…”
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5
InAs/AlInAs quantum-dash cascade structures with electroluminescence in the mid-infrared
Published in Journal of crystal growth (15-05-2011)“…We demonstrate mid-infrared emission from cascade structures based on InAs quantum dashes (QDashes) grown on tensile-strained AlInAs. The proposed design…”
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Journal Article Conference Proceeding -
6
Parameter tunable GaInNAs saturable absorbers for mode locking of solid-state lasers
Published in Journal of crystal growth (01-04-2007)“…Passively mode-locked solid-state lasers require semiconductor saturable absorber mirrors (SESAMs) with a recovery time up to 10–30 times longer than the final…”
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Journal Article Conference Proceeding -
7
Nitrogen-dependent effects on GaInNAs photoluminescence upon annealing
Published in Journal of crystal growth (01-04-2007)“…In order to assess the effects of nitrogen on GaInNAs during the annealing process, we analyzed several quantum wells (QWs) with different nitrogen contents…”
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Journal Article Conference Proceeding -
8
All-GaInNAs ultrafast lasers: Material development for emitters and absorbers
Published in Journal of crystal growth (01-04-2007)“…Defect engineering is a key feature in material development for active and passive laser devices. Active devices such as surface emitting lasers require…”
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Journal Article Conference Proceeding -
9
Passively mode-locked 1.3-[mu]m multi-GHz Nd:YVO4 lasers with low timing jitter
Published in IEEE photonics technology letters (01-06-2005)Get full text
Journal Article -
10
Dilute nitride absorbers in passive devices for mode locking of solid-state lasers
Published in Journal of crystal growth (01-05-2005)“…We report on the growth, material and nonlinear optical properties of GaInNAs quantum wells (QWs) used in semiconductor saturable absorber mirrors (SESAMs) for…”
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Journal Article Conference Proceeding -
11
Asymmetric heterostructure for photovoltaic InAs quantum dot infrared photodetector
Published in Applied physics letters (12-07-2010)“…A photovoltaic InAs quantum dot-under-a-well photodetector is reported with a peak responsivity at 7 μm wavelength. In this structure, we implement an improved…”
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12
Midinfrared electroluminescence from InAs/InP quantum dashes
Published in Applied physics letters (29-11-2010)“…We report midinfrared intraband electroluminescence from quantum cascade structures based on InAs/AlInGaAs quantum dashes grown on InP. The devices show a…”
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13
Asymmetric heterostructure for photovoltaic InAs quantum dotinfrared photodetector
Published in Applied physics letters (13-07-2010)“…A photovoltaic InAs quantum dot-under-a-well photodetector is reported with a peak responsivity at 7 μ m wavelength. In this structure, we implement an…”
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14
Room temperature operation of a deep etched buried heterostructure photonic crystal quantum cascade laser
Published in Laser & photonics reviews (01-09-2016)“…High power single mode quantum cascade lasers with a narrow far field are important for several applications including surgery or military countermeasure…”
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15
Low-loss GaInNAs saturable absorber mode locking a 1.3-μm solid-state laser
Published in Applied physics letters (17-05-2004)“…We have demonstrated stable self-starting passive cw mode locking of a solid-state laser at about 1.3 μm using a GaInNAs semiconductor saturable absorber…”
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16
Mid-infrared emission of quantum-dash-based quantum cascade laser structures
Published in CLEO/QELS: 2010 Laser Science to Photonic Applications (01-05-2010)“…We developed two mid-infrared quantum cascade laser structures based on InAs quantum dashes embedded either in AlInGaAs lattice-matched to InP or in…”
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Conference Proceeding -
17
Room temperature operation of a photonic crystal quantum cascade laser
Published in 2015 Conference on Lasers and Electro-Optics (CLEO) (01-05-2015)“…We report on design, fabrication and investigation of a buried heterostructure photonic crystal quantum cascade laser operating in the mid-IR (8.5μm) at room…”
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Conference Proceeding -
18
Nonlinear absorption edge properties of 1.3 - μ m GaInNAs saturable absorbers
Published in Applied physics letters (26-09-2005)“…GaInNAs 1.3 - μ m quantum-well saturable absorber mirrors are characterized with spectrally resolved nonlinear reflectivity measurements over 70 nm around the…”
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19
Synchrotron microspectroscopy of quantum cascade laser devices based on quantum wells and quantum dashes
Published in 2012 Conference on Lasers and Electro-Optics (CLEO) (01-05-2012)“…We apply synchrotron-based Infrared broadband (0.08-1eV) transmission measurements of quantum cascade laser devices based on quantum wells and quantum dashes…”
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Conference Proceeding -
20
Passively mode-locked 1.3-μm multi-GHz Nd:YVO4 lasers with low timing jitter
Published in IEEE photonics technology letters (01-06-2005)“…We demonstrate diode-pumped passively mode-locked 1.34-μm Nd:YVO 4 lasers with repetition rates of 5 and 10GHz. Passive mode locking is achieved by using a…”
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Journal Article