Search Results - "Livadaru, Lucian"
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Scanning tunneling spectroscopy reveals a silicon dangling bond charge state transition
Published in New journal of physics (15-07-2015)“…We report the study of single dangling bonds (DBs) on a hydrogen-terminated silicon (100) surface using a low-temperature scanning tunneling microscope. By…”
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Controlled coupling and occupation of silicon atomic quantum dots at room temperature
Published in Physical review letters (30-01-2009)“…It is demonstrated that the silicon atom dangling bond (DB) state serves as a quantum dot. Coulomb repulsion causes DBs separated by less, similar2 nm to…”
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Conductivity of Si(111)-(7×7): the role of a single atomic step
Published in Physical review letters (20-06-2014)“…While it is known that the Si-(7×7) is a conducting surface, measured conductivity values differ by 7 orders of magnitude. Here we report a combined STM and…”
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Corrigendum: Dangling-bond charge qubit on a silicon surface (2010 New J. Phys. 12 083018)
Published in New journal of physics (14-11-2017)Get full text
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Nanoscale structuring of tungsten tip yields most coherent electron point-source
Published in New journal of physics (18-07-2013)“…This report demonstrates the most spatially-coherent electron source ever reported. A coherence angle of 14.3 ± 0.5° was measured, indicating a virtual source…”
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Initiating and Monitoring the Evolution of Single Electrons Within Atom-Defined Structures
Published in Physical review letters (19-10-2018)“…Using a noncontact atomic force microscope, we track and manipulate the position of single electrons confined to atomic structures engineered from silicon…”
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Binary atomic silicon logic
Published in Nature electronics (01-12-2018)“…It has been proposed that miniature circuitry will ultimately be crafted from single atoms. Despite many advances in the study of atoms and molecules on…”
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Atomically Precise Manufacturing of Silicon Electronics
Published in ACS nano (05-03-2024)“…Atomically precise manufacturing (APM) is a key technique that involves the direct control of atoms in order to manufacture products or components of products…”
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Electrostatic Landscape of a Hydrogen-Terminated Silicon Surface Probed by a Moveable Quantum Dot
Published in ACS nano (24-09-2019)“…With nanoelectronics reaching the limit of atom-sized devices, it has become critical to examine how irregularities in the local environment can affect device…”
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Single-electron dynamics of an atomic silicon quantum dot on the H-Si(100)-(2×1) surface
Published in Physical review letters (27-06-2014)“…Here we report the direct observation of single electron charging of a single atomic dangling bond (DB) on the H-Si(100)-2×1 surface. The tip of a scanning…”
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SiQAD: A Design and Simulation Tool for Atomic Silicon Quantum Dot Circuits
Published in IEEE transactions on nanotechnology (2020)“…This paper introduces SiQAD, a computer-aided design tool enabling the rapid design and simulation of computational assemblies of atomic silicon quantum dots…”
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Tunnel coupled dangling bond structures on hydrogen terminated silicon surfaces
Published in The Journal of chemical physics (14-02-2011)“…We study both experimentally and theoretically the electronic behavior of dangling bonds (DBs) at a hydrogen terminated Si(100)-2×1 surface. Dangling bonds…”
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Atom-scale surface reactivity mediated by long-ranged equilibrium charge transfer
Published in Physical review. B, Condensed matter and materials physics (13-10-2014)“…The observation of reaction outcomes at the bulk scale provides an average view of chemical processes, obscuring potentially significant differences in the…”
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The role of capillary and surface forces in the crossover behavior of solid nanoparticles at liquid interfaces
Published in Journal of colloid and interface science (01-12-2006)“…We investigate the interaction between a nanoparticle and an oil–water interface with particular emphasis on the particle crossing through the interface. The…”
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Dangling-bond charge qubit on a silicon surface
Published in New journal of physics (09-08-2010)Get full text
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Characterizing the rate and coherence of single-electron tunneling between two dangling bonds on the surface of silicon
Published in Physical review. B, Condensed matter and materials physics (28-01-2014)“…We devise a scheme to characterize tunneling of an excess electron shared by a pair of tunnel-coupled dangling bonds on a silicon surface-effectively a…”
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Organic Nanostructures on Hydrogen-Terminated Silicon Report on Electric Field Modulation of Dangling Bond Charge State
Published in Journal of the American Chemical Society (25-07-2012)“…We pursue dynamic charge and occupancy modulation of silicon dangling bond sites on H–Si(100)-2 × 1 with a biased scanning tunneling microscope tip and…”
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Fundamental Mechanism of Translocation across Liquidlike Membranes: Toward Control over Nanoparticle Behavior
Published in Nano letters (01-01-2006)“…We envision and theoretically investigate a novel behavior of a functionalized nanoparticle designed to translocate through a liquidlike membrane. We develop a…”
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In-line holographic electron microscopy in the presence of external magnetic fields
Published in Ultramicroscopy (01-04-2008)“…It is now a well-known fact that the phase of electron waves is altered by external magnetic fields via the Aharonov–Bohm effect. This implies that any…”
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