Search Results - "Liu, Xiangtai"
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Ultra-wide single crystal nanobelts of β-Ga2O3 synthesized by carbothermal reduction
Published in Applied physics. A, Materials science & processing (01-03-2023)“…Synthesized β-Ga 2 O 3 nanobelts have excellent electrical and optical properties. However, their widths are mostly limited to only a few microns or even tens…”
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Effect of annealing temperature on solar-blind photodetectors based on 60-nm-thick Ga2O3 films
Published in Applied physics. A, Materials science & processing (01-02-2024)“…In this study, 60-nm-thick Ga 2 O 3 films were deposited on c -plane sapphire substrates by atomic layer deposition process. The effect of annealing…”
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Near-free-standing epitaxial graphene on rough SiC substrate by flash annealing at high temperature
Published in Carbon (New York) (01-08-2017)“…In this paper, flash annealing at high temperature (HT) is adopted to fabricate graphene through thermal decomposition of SiC. Interestingly, surface…”
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Enhanced n-doping of epitaxial graphene on SiC by bismuth
Published in Applied physics letters (02-07-2018)“…Doping in epitaxial graphene (EG) is challenging because of the high-temperature process and the ultra-thin nature of graphene. In this work, a facile one-step…”
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Study on Black Phosphorus Characteristics Using a Two-Step Thinning Method
Published in Materials (14-01-2022)“…A mild two-step method of black phosphorus (BP) flake thinning was demonstrated in this article. Slight ultraviolet-ozone (UVO) radiation followed by an argon…”
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Formation of Micro- and Nano-Trenches on Epitaxial Graphene
Published in Applied sciences (01-12-2018)“…Catalytic cutting by metal particles under an atmosphere environment is a promising method for patterning graphene. Here, long straight micro-trenches are…”
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Atomic structure and electronic properties of the intercalated Pb atoms underneath a graphene layer
Published in Carbon (New York) (01-07-2021)“…Determining atomic structure of intercalated metallic layer under graphene is a hot-topic due to the potential applications in electronic engineering. In this…”
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Doping induced indirect-to-direct bandgap transition of two-dimensional Ga2O3
Published in Applied surface science (01-07-2021)“…The work demonstrates that substitutional dopants can result in the indirect-to-direct bandgap transition of two-dimensional Ga2O3. [Display omitted] •Indirect…”
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Acoustic Emission Signal Denoising of Bridge Structures Using SOM Neural Network Machine Learning
Published in Journal of performance of constructed facilities (01-02-2023)“…AbstractIdentification of noise signals is one of the most challenging problems in health monitoring of a bridge structure using acoustic emission (AE)…”
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Effects of growth cycle number and annealing temperature on Ga2O3-on-quartz solar-blind photodetectors
Published in Materials chemistry and physics (15-09-2023)“…In this study, Ga2O3 thin films were deposited on quartz glass substrates by atomic layer deposition technique followed by post annealing process. The…”
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Nanostructured Bi Grown on Epitaxial Graphene/SiC
Published in The journal of physical chemistry letters (04-10-2018)“…Controllable growth of metal nanostructures on epitaxial graphene (EG) is particularly interesting and important for the applications in electric devices. Bi…”
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Ultra-Wide bandgap Quasi Two-Dimensional β-Ga2O3 with highly In-Plane anisotropy for power electronics
Published in Applied surface science (15-05-2023)“…[Display omitted] •Quasi-2D UID Ga2O3 exhibits a weakly anisotropic in-plane electrical property (mobilitymax/min ∼ 1.4), whereas Quasi-2D doping Ga2O3 shows a…”
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Bismuth mediated defect engineering of epitaxial graphene on SiC(0001)
Published in Carbon (New York) (01-05-2019)“…Structural defects are commonly undesirable in materials, however, atomic-level defect engineering is promising to improve the electronic, mechanical and…”
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A Study on the Performance of Gate-All-Around Heterojunction Tunnel Field-Effect Transistors Based on Polarization Effect
Published in ACS applied electronic materials (25-06-2024)“…Tunnel field-effect transistors (TFETs) have gained prominence in low-power applications for their capability to surpass the subthreshold swing limit of 60…”
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Substitutional doping of Ag into epitaxial graphene on 6H-SiC substrates during thermal decomposition
Published in Carbon (New York) (01-08-2016)“…Controllable and damage-free doping of graphene is challenging because of the ultra-thin nature of graphene. In this work, epitaxial graphene prepared by…”
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Corrigendum to “Near-free-standing epitaxial graphene on rough SiC substrate by flash annealing at high temperature” [Carbon 120 (2017) 219–225]
Published in Carbon (New York) (01-10-2017)Get full text
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Characteristic of flexible β-Ga2O3 Schottky barrier diode based on mechanical stripping process
Published in Superlattices and microstructures (01-12-2021)“…The flexible transverse β-Ga2O3 Schottky barrier diode (SBD) was fabricated by transferring the stripped β-Ga2O3 single crystal film onto muscovite, and its…”
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