Search Results - "Liu, Pengqiang"
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Ge surface passivation by GeO2 fabricated by N2O plasma oxidation
Published in Science China. Information sciences (01-04-2015)“…In this paper, Ge surface passivation by GeO 2 grown by N 2 O plasma oxidation is presented and experimentally demonstrated. Results show that…”
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Journal Article -
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Natural resources Kuznets curve: The role of mineral resources, urbanization, and digitalization in BRICS economies
Published in Resources policy (01-03-2024)“…The study addresses the prevailing assumption within the literature, that abundant natural resources exacerbate environmental degradation. Despite significant…”
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Sustainable development: Uncovering the synergy between natural resources, clean technologies, and economic progress
Published in Resources policy (01-01-2024)Get full text
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Improvement of thermal stability of nickel germanide using nitrogen plasma pretreatment for germanium-based technology
Published in Science China. Information sciences (01-10-2018)Get full text
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Surface pretreatment and passivation utilizing high concetrated HCL and NH4F solution for germanium-based technology
Published in 2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) (01-10-2014)“…In this paper, an interface treatment for (100) Ge using HCl cleaning with different concentration and passivation with HCl and NH 4 F is experimentally…”
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Conference Proceeding -
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Ge surface passivation by GeO sub(2) fabricated by N sub(2)O plasma oxidation
Published in Science China. Information sciences (01-04-2015)“…In this paper, Ge surface passivation by GeO sub(2) grown by N sub(2)O plasma oxidation is presented and experimentally demonstrated. Results show that…”
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Journal Article -
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Ge surface passivation by GeO2 fabricated by N20 plasma oxidation
Published in 中国科学:信息科学(英文版) (2015)“…In this paper, Ge surface passivation by GeO2 grown by N2O plasma oxidation is presented and experimentally demonstrated. Results show that stoichiometrically…”
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Journal Article -
8
Thermal stability improvement of nickel germanide utilizing nitrogen plasma pretreatment for germanium-based technology
Published in 2016 IEEE International Nanoelectronics Conference (INEC) (01-05-2016)“…In this paper, a novel nitrogen plasma pretreatment (NPP) has been experimentally demonstrated to improve the thermal stability of thin NiGe film. The root…”
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Conference Proceeding -
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N+/P shallow junction with high dopant activation and low contact resistivity fabricated by solid phase epitaxy method for Ge technology
Published in 2015 Silicon Nanoelectronics Workshop (SNW) (01-06-2015)“…In this paper, solid phase epitaxy (SPE) process is proposed to improve phosphorous activation and hence reduce the contact resistivity of n + /p junction for…”
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Conference Proceeding