Search Results - "Liu, L.C.T."

Broadband monolithic passive baluns and monolithic double-balanced mixer by Chen, T.-h., Chang, K.W., Bui, S.B., Wang, H., Dow, G.S., Liu, L.C.T., Lin, T.S., Titus, W.S.

“…The design and fabrication of four broadband monolithic passive baluns including CPW Marchand, multilayer MS Marchand, planar-transformer and broadside-coupled…”
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Cost-effective high-performance monolithic X-band low-noise amplifiers by Wang, D.C., Pauley, R.G., Wang, S., Liu, L.C.T.

“…A low-cost, high-performance X -band amplifier with ion-implanted MESFET technology has been demonstrated. Various design, material, and processing approaches…”
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Broadband single- and double-balanced resistive HEMT monolithic mixers by Chen, T.H., Chang, K.W., Bui, S.B.T., Liu, L.C.T., Dow, G.S., Pak, S.

“…A double-balanced (DB) 3-18 GHz and a single-balanced (SB) 2-16 GHz resistive HEMT monolithic mixer have been successfully developed. The DB mixer consists of…”
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A Q-band monolithic balance resistive HEMT mixer using CPW/slotline balun by Chen, T.-H., Ton, T.-N., Dow, G.S., Nakano, K., Liu, L.C.T., Berenz, J.

“…A Q-band balanced, resistive high-electron-mobility-transistor (HEMT) mixer has been developed for integration in monolithic millimeter-wave receivers. The…”
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A W-band monolithic downconverter by Chang, K.W., Wang, H., Bui, S.B., Chen, T.-h., Tan, K.L., Ton, T.-N., Berenz, J., Dow, G.S., Lin, T.S., Garske, D.C., Liu, L.C.T.

“…The design, fabrication, and evaluation of a fully integrated W-band monolithic downconverter based on InGaAs pseudomorphic HEMT technology are presented. The…”
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A W-band image-rejection downconverter by Chang, K.W., Wang, H., Ton, T.-N., Chen, T.-H., Tan, K.L., Dow, G.S., Hayashibara, G.M., Allen, B.R., Berenz, J., Liu, P.-H., Streit, D.C., Liu, L.C.T.

“…The design, fabrication, and evaluation of a W-band image-rejection downconverter based on pseudomorphic InGaAs-GaAs HEMT technology are presented. The…”
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High performance resistive EHF mixers using InGaAs HEMTs by Chang, K.W., Chen, T.H., Bui, S.B.T., Liu, L.C.T., Nguyen, L.

“…The design, fabrication, and testing of a hybrid and a monolithic single-balanced EHF mixer are presented. Very low mixer intermodulation distortion was…”
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A double balanced 3-18 GHz resistive HEMT monolithic mixer by Chen, T.H., Chang, K.W., Bui, S.B.T., Liu, L.C.T., Pak, S.

“…A double balanced (DB) 3-18 GHz resistance HEMT (high electron mobility transistor) monolithic mixer has been successfully developed. This mixer consists of a…”
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An ultra low noise W-band monolithic three-stage amplifier using 0.1- mu m pseudomorphic InGaAs/GaAs HEMT technology by Wang, H., Ton, T.N., Tan, K.L., Dow, G.S., Chen, T.H., Chang, K.W., Berenz, J., Allen, B., Liu, P., Streit, D., Hayashibara, G., Liu, L.C.T.

“…An ultra-low-noise W-band monolithic three-stage amplifier based on 0.1- mu m pseudomorphic InGaAs/GaAs high electron mobility transistor (HEMT) devices has…”
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A K-band HEMT low noise receive MMIC for phased array applications by Carandang, R., Yonaki, J., Jones, W.L., Kasody, R.E., Lam, W., Liu, L.C.T.

“…A state-of-the-art InGaAs HEMT (high electron mobility transistor) receive MMIC (microwave monolithic integrated circuit) consisting of a low-noise amplifier…”
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Computer-Aided Synthesis of Lumped Lossy Matching Networks for Monolithic Microwave Integrated Circuits ( MMIC's) by Liu, L.C.T., Ku, W.H.

“…A systematic computer-aided synthesis (CAS) technique of lumped Iossy matching networks is presented in this paper. This exact synthesis procedure can take…”
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Broadband monolithic passive baluns and monolithic double-balanced mixer by Chen, T.H., Chang, K.W., Wang, H., Dow, G.S., Liu, L.C.T., Bui, S.B.T., Lin, T.S.

“…The authors present the design and fabrication of four broadband monolithic passive baluns including CPW (coplanar waveguide) Marchand, multilayer MS Marchand,…”
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A 30-GHz Monolithic Receiver by Liu, L.C.T., Liu, C.S., Kessler, J.R., Shing-Kuo Wang, Ching-Der Chang

“…Several monolithic integrated circuits have been developed to make a 30-GHz receiver. The receiver components include a low-noise amplifier, an IF amplifier, a…”
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Cost-Effective High-Performance Monolithic X-Band Low-Noise Amplifiers by Wang, D.C., Pauley, R.G., Shing-Kuo Wang, Liu, L.C.T.

“…A low-cost, high-performance X-band amplifier with ion-implanted MESFET technology has been demonstrated. Various design, material, and processing approaches…”
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A 30-GHz monolithic receiver by Liu, L.C.T., Liu, C.S., Kessler, J.R., Shing-Kuo Wang, Ching-Der Chang

“…Several monolithic integrated circuits have been developed to make a 30-GHz receiver. The receiver components include a low-noise amplifier, an IF amplifier, a…”
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A 30 GHz Monolithic Receiver by Liu, L.C.T., Liu, C.S., Kessler, J.R., Wang, S.K.

“…Several monolithic integrated circuits have been developed to make a 30 GHz receiver. The LNA chip has 7 dB noise figure with 14 dB gain. The IF amplifier has…”
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Cost-Effective High Performance Monolithic X-Band Low Noise Amplifiers by Wang, D.C., Pauley, R.G., Wang, S.K., Liu, L.C.T.

“…A low cost and high performance X-band low-noise amplifier with ion-implanted MESFET technology has been demonstrated. Various design, material, and processing…”
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Production technology for high-yield, high-performance GaAs monolithic amplifiers by Shing-Kuo Wang, Ching-Der Chang, Siracusa, M., Liu, L.C.T., Pauley, R.G., Asher, P., Sokolich, M.

“…A production technology for GaAs MMIC's has been developed. In a six-month period, seventy 2-in wafers have been processed for X -band monolithic power and…”
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Production Technology for High-Yield, High-Performance GaAs Monolithic Amplifiers by Shing-Kuo Wang, Ching-Der Chang, Siracusa, M., Liu, L.C.T., Pauley, R.G., Asher, P., Sokolich, M.

“…A production technology for GaAs MMIC's has been developed. In a six-month period, seventy 2-in wafers have been processed for X-band monolithic power and…”
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A 69 GHz Monolithic FET Oscillator by Maki, D.W., Schellenberg, M., Yamasaki, H., Liu, L.C.T.

“…A monolithic oscillator was fabricated using conventional planar FET technology. The active device used was a 0.35x60 micron FET fabricated on an active layer…”
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