Search Results - "Liu, Changze"

In vitro inhibitory effect of zingerone on TNFα-stimulated fibroblast-like synoviocytes by Mao, Yuhang, Liu, Changze, Liu, Dan, Wei, Xianhua, Tan, Xin, Zhou, Junnan, Yu, Xiaolu, Liu, Mei

“…Targeting Fibroblast-like synoviocytes (FLSs) is an attractive complementary approach for RA therapy. This study aimed to investigate the inhibitory effects of…”
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Experimental study on the oxide trap coupling effect in metal oxide semiconductor field effect transistors with HfO2 gate dielectrics by Ren, Pengpeng, Wang, Runsheng, Jiang, Xiaobo, Qiu, Yingxin, Liu, Changze, Huang, Ru

“…In this Letter, the coupling effect between multi-traps in HfO2 gate dielectrics is experimentally studied in scaled high-κ/metal-gate metal oxide…”
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Hot carrier reliability characterization in consideration of self-heating in FinFET technology by Minjung Jin, Changze Liu, Jinju Kim, Jungin Kim, Seungjin Choo, Yoohwan Kim, Hyewon Shim, Lijie Zhang, Kab-jin Nam, Jongwoo Park, Sangwoo Pae, Haebum Lee

“…A severity of hot carrier injection (HCI) in PFET becomes worse than NFET at elevated temperatures. This new observation is further found to be due to the…”
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Investigation of HCI effects in FinFET based ring oscillator circuits and IP blocks by Yoohwan Kim, Hyewon Shim, Minjung Jin, Jongsun Bae, Changze Liu, Sangwoo Pae

“…Hot carrier injection (HCI) effect with circuits running at very high frequency through overdrive (OD) can manifest under very long stress time and lower…”
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Systematical study of 14nm FinFET reliability: From device level stress to product HTOL by Changze Liu, Hyun-Chul Sagong, Hyejin Kim, Seungjin Choo, Hyunwoo Lee, Yoohwan Kim, Hyunjin Kim, Bisung Jo, Minjung Jin, Jinjoo Kim, Sangsu Ha, Sangwoo Pae, Jongwoo Park

“…In this paper, fundamental reliability findings in 14nm bulk FinFET technology, are systematically investigated. From device and Ring Oscillator stress to…”
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Negative-Bias Temperature Instability in Gate-All-Around Silicon Nanowire MOSFETs: Characteristic Modeling and the Impact on Circuit Aging by Liu, Changze, Yu, Tao, Wang, Runsheng, Zhang, Liangliang, Huang, Ru, Kim, Dong-Won, Park, Donggun, Wang, Yangyuan

“…In this paper, the negative-bias temperature instability (NBTI) in p-type gate-all-around silicon nanowire MOSFETs (SNWTs) is investigated for circuit aging…”
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New insights into 10nm FinFET BTI and its variation considering the local layout effects by Changze Liu, Minjung Jin, Uemura, Taiki, Jinju Kim, Jungin Kim, Ukjin Jung, Hyun Chul Sagong, Gunrae Kim, Junekyun Park, Sangchul Shin, Sangwoo Pae

“…In this paper, BTI variation of 10nm FinFET is experimentally studied taking into account of the local layout effects. Although Fin shape is further optimized…”
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New observations on the random telegraph noise induced Vth variation in nano-scale MOSFETs by Changze Liu, Kyong Taek Lee, Hyunwoo Lee, Yoohwan Kim, Sangwoo Pae, Jongwoo Park

“…In this paper, random telegraph noise (RTN) induced ΔV th variation under the worst bias condition is experimentally investigated. The results show that ΔV th…”
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HCI and NBTI induced degradation in gate-all-around silicon nanowire transistors by Huang, Ru, Wang, Runsheng, Liu, Changze, Zhang, Liangliang, Zhuge, Jing, Tao, Yu, Zou, Jibin, Liu, Yuchao, Wang, Yangyuan

“…The silicon nanowire transistor (SNWT) with gate-all-around (GAA) structure can be considered as one of the potential candidates for ultimate scaling due to…”
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Observation of strong reflection of electron waves exiting a ballistic channel at low energy by Vaz, Canute I., Liu, Changze, Campbell, Jason P., Ryan, Jason T., Southwick, Richard G., Gundlach, David, Oates, Anthony S., Huang, Ru, Cheung, Kin. P.

“…Wave scattering by a potential step is a ubiquitous concept. Thus, it is surprising that theoretical treatments of ballistic transport in nanoscale devices,…”
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Deep understanding of AC RTN in MuGFETs through new characterization method and impacts on logic circuits by Jibin Zou, Runsheng Wang, Mulong Luo, Ru Huang, Nuo Xu, Pengpeng Ren, Changze Liu, Weize Xiong, Jianping Wang, Jinhua Liu, Jingang Wu, Waisum Wong, Shaofeng Yu, Hanming Wu, Shiuh-Wuu Lee, Yangyuan Wang

“…The AC random telegraph noise (AC RTN) in scaled multi-gate FETs (MuGFETs) is experimentally studied for the first time, which is found to have enhanced AC…”
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Characterization and analysis of gate-all-around Si nanowire transistors for extreme scaling by Ru Huang, Runsheng Wang, Jing Zhuge, Changze Liu, Tao Yu, Liangliang Zhang, Xin Huang, Yujie Ai, Jinbin Zou, Yuchao Liu, Jiewen Fan, Huailin Liao, Yangyuan Wang

“…The gate-all-around (GAA) silicon nanowire transistor (SNWT) is considered as one of the best candidates for ultimately scaled CMOS devices at the end of the…”
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Characteristics of Gate Current Random Telegraph Signal Noise in SiON/HfO2/TaN p-Type Metal--Oxide--Semiconductor Field-Effect Transistors under Negative Bias Temperature Instability Stress Condition by Zhang, Liangliang, Liu, Changze, Wang, Runsheng, Huang, Ru, Yu, Tao, Zhuge, Jing, Kirsch, Paul, Tseng, Hsing-Huang, Wang, Yangyuan

“…Gate dielectric traps are becoming a major concern in the high-$k$/metal gate devices. In this paper, new experimental results and in-depth study on gate…”
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New observations on the AC random telegraph noise (AC RTN) in nano-MOSFETs by Runsheng Wang, Jibin Zou, Xiaoqing Xu, Changze Liu, Jinhua Liu, Hanming Wu, Yangyuan Wang, Ru Huang

“…The random telegraph noise (RTN) is becoming a critical issue for variability and reliability in nanoscale MOSFETs. Since devices actually operate under AC…”
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New insights into the hot carrier degradation (HCD) in FinFET: New observations, unified compact model, and impacts on circuit reliability by Zhuoqing Yu, Jiayang Zhang, Runsheng Wang, Shaofeng Guo, Changze Liu, Ru Huang

“…In this paper, hot carrier degradation (HCD) in FinFET is studied for the first time from trap-based approach rather than conventional carrier-based approach,…”
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Inflection Points in GAA NS-FET to C-FET Scaling Considering Impact of DTCO Boosters by Yakimets, Dmitry, Bhuwalka, Krishna K., Wu, Hao, Rzepa, Gerhard, Karner, Markus, Liu, Changze

“…Complimentary FETs (C-FETs) enable aggressive standard cell height reduction, facilitating on-target area scaling without shrinking contacted gate pitch (CGP)…”
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Deep H-GCN: Fast Analog IC Aging-Induced Degradation Estimation by Chen, Tinghuan, Sun, Qi, Zhan, Canhui, Liu, Changze, Yu, Huatao, Yu, Bei

“…With continued scaling, the transistor aging induced by hot carrier injection (HCI) and bias temperature instability (BTI) causes an increasing failure of…”
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Optimization and Benchmarking FinFETs and GAA Nanosheet Architectures at 3-nm Technology Node: Impact of Unique Boosters by Bhuwalka, Krishna K., Wu, Hao, Zhao, Wenbo, Rzepa, Gerhard, Baumgartner, Oskar, Benistant, Francis, Chen, Yijian, Liu, Changze

“…Using a full design-technology cooptimization (DTCO) framework, we benchmark gate-all-around (GAA) nanosheet (NS) FETs against FinFETs at 3-nm logic technology…”
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New insights into oxide traps characterization in gate-all-around nanowire transistors with TiN metal gates based on combined Ig-Id RTS technique by Liangliang Zhang, Jing Zhuge, Runsheng Wang, Ru Huang, Changze Liu, Dake Wu, Zhaoyi Kang, Dong-Won Kim, Donggun Park, Yangyuan Wang

“…By using combined gate current and drain current random telegraph signal noise (I g -I d RTS) technique, both electron and hole traps within the gate stack of…”
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Peimine suppresses collagen-induced arthritis, activated fibroblast-like synoviocytes and TNFα-induced MAPK pathways by Zhou, Junnan, Mao, Yuhang, Shi, Xiaotian, Zhang, Yudie, Yu, Xiaolu, Liu, Xuan, Diao, Li, Yang, Xue, Liu, Changze, Liu, Dan, Tan, Xin, Liu, Mei

“…[Display omitted] •Peimine suppressed synovitis and bone destruction in CIA rats.•Peimine inhibited TNFα-induced destructive behaviors of arthritic…”
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