Search Results - "Litvinov, V.G."

Experimental equipment to investigate deep energy levels in semiconductor barrier structures with high leakage current by Gudzev, V.V., Litvinov, V.G., Mishustin, V.G., Maslov, A.D., Zubkov, M.V.

“…In this paper we present description of the developed current DLTS spectrometer to investigate deep energy levels in barrier structures based on crystalline…”
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Influence of deep level defects on photoelectrical processes in p-n junction solar cells with porous silicon antireflection coating by Tregulov, V.V., Litvinov, V.G., Ermachikhin, A.V., Maslov, A.D.

“…In this paper we investigated n+-p-junction silicon solar cells with antireflection por-Si film, formed on the front surface by anodic electrochemical etching…”
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Investigation of recombination centers in the active layers of HIT solar cells by Maslov, A.D., Litvinov, V.G., Ermachikhin, A.V., Vishnyakov, N.V., Gudzev, V.V., Vikhrov, S.P.

“…In this paper we present results of DLTS investigating HIT solar cells. Analysis of DLTS spectra gave deep level activation energies and concentrations…”
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Comprehensive implementation of the magnetic contact reliability test method by Loginov, D.S., Kholomina, T.A., Litvinov, V.G., Rybin, N.B., Semenov, A.R., Rybina, N.V.

“…In this paper the technical implementation of the test methods for reed switches (relays with magnetic contacts) in various modes was considered. The advantage…”
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MECHANISMS OF CURRENT FLOW IN THE DIODE STRUCTURE WITH AN [n.sup.+]-p-JUNCTION FORMED BY THERMAL DIFFUSION OF PHOSPHORUS FROM POROUS SILICON FILM by Tregulov, V.V, Litvinov, V.G, Ermachikhin, A.V

“…Temperature dependences of current-voltage characteristics of the photoelectric converter with an antireflective film of porous silicon and an…”
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Specific features of current flow mechanisms in the semiconductor structure of a photoelectric converter with an [n.sup.+]--p-junction and an antireflective porous silicon film by Tregulov, V.V, Stepanov, V.A, Litvinov, V.G, Ermachikhin, A.V

“…The temperature dependence of forward and reverse branches of the current-voltage characteristic of the semiconductor structure of a photoelectric converter…”
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Study of Current Flow Mechanisms in a CdS/por-Si/p-Si Heterostructure by Tregulov, V. V., Litvinov, V. G., Ermachikhin, A. V.

“…The temperature dependence of the forward and reverse portions of the current–voltage characteristic and the photovoltage spectrum of a CdS/ por -Si/ p -Si…”
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Study of Deep Levels in a HIT Solar Cell by Vikhrov, S. P., Vishnyakov, N. V., Gudzev, V. V., Ermachikhin, A. V., Shilina, D. V., Litvinov, V. G., Maslov, A. D., Mishustin, V. G., Terukov, E. I., Titov, A. S.

“…The results of studying a HIT (heterojunction with an intrinsic thin layer) Ag/ITO/ a -Si:H( p )/ a -Si:H( i )/ c -Si( n )/ a -Si:H( i )/ a -Si:H( n + )/ITO/Ag…”
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Low-resistance and high-resistance states in strontium titanate films formed by the sol–gel method by Sohrabi Anaraki, H., Gaponenko, N. V., Litvinov, V. G., Ermachikhin, A. V., Kolos, V. V., Pyatlitski, A. N., Ivanov, V. A.

“…A change in the resistance of strontium titanate structures formed by the sol–gel method has been demonstrated. The transition of a strontium titanate film…”
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Analysis of the electrostatic interaction of charges in multiple InGaAs/GaAs quantum wells by admittance-spectroscopy methods by Zubkov, V. I., Yakovlev, I. N., Litvinov, V. G., Ermachihin, A. V., Kucherova, O. V., Cherkasova, V. N.

“…The effect of the electrostatic interaction of charges in multiple quantum wells of a doped heterostructure is studied by admittance spectroscopy methods and…”
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A measuring System for the Spectroscopy of the Low-Frequency Noise of Semiconductor Diode Structures by Kostryukov, S. A., Ermachikhin, A. V., Litvinov, V. G., Kholomina, T. A., Rybin, N. B.

“…A measuring system for the spectroscopy of the low-frequency noise of semiconductor diode structures to investigate noise generation mechanisms is considered…”
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Deep-level transient spectroscopy and cathodoluminescence of Cd xZn 1− xTe/ZnTe QW structures grown on GaAs(1 0 0) by MBE by Kozlovsky, V.I., Sadofyev, Yu.G., Litvinov, V.G.

“…MBE-grown ZnTe/CdZnTe/ZnTe strained single quantum well (SQW) and multiple quantum well (MQW) structures with non-doping layers were investigated by…”
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Deep-Level Transient Spectroscopy and Cathodoluminescence of CdSe/ZnSe QD Structures Grown on GaAs(100) by MBE by Litvinov, V.G., Kozlovsky, V.I., Sadofyev, Yu.G.

“…CdSe/ZnSe structures grown on n+‐GaAs(100) by molecular beam epitaxy were studied by methods of deep‐level transient spectroscopy (DLTS) and…”
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Deep-level transient spectroscopy and cathodoluminescence of CdxZn1−xTe/ZnTe QW structures grown on GaAs(100) by MBE by Kozlovsky, V.I., Sadofyev, Yu.G., Litvinov, V.G.

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