Search Results - "Litton, C.W"

Optical properties of ZnO crystals containing internal strains by Reynolds, D.C, Look, D.C, Jogai, B, Jones, R.L, Litton, C.W, Harsch, W, Cantwell, G

“…The way in which in-grown strain impacts the optical properties of crystals can be revealed when combined with annealing studies. During the annealing process…”
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Role of near-surface states in ohmic-Schottky conversion of Au contacts to ZnO by Mosbacker, H. L., Strzhemechny, Y. M., White, B. D., Smith, P. E., Look, D. C., Reynolds, D. C., Litton, C. W., Brillson, L. J.

“…A conversion from ohmic to rectifying behavior is observed for Au contacts on atomically ordered polar ZnO surfaces following remote, room-temperature oxygen…”
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Electrical properties of bulk ZnO by Look, D.C., Reynolds, D.C., Sizelove, J.R., Jones, R.L., Litton, C.W., Cantwell, G., Harsch, W.C.

“…Large-diameter (2-inch), n-type ZnO boules grown by a new vapor-phase transport method were investigated by the temperature-dependent Hall-effect technique…”
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Wavefunction engineering of layered wurtzite semiconductors grown along arbitrary crystallographic directions by Ram-Mohan, L.R., Girgis, A.M., Albrecht, J.D., Litton, C.W.

“…The electronic band structure of wurtzite semiconductor heterostructures is investigated theoretically using the envelope function k ⋅ P formalism. We use a…”
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A high-gain GaAs/AlGaAs n-p-n heterojunction bipolar transistor on by Won, T., Litton, C.W., Morkoc, H., Yariv, A.

“…High-gain GaAs/AlGaAs n-p-n heterojunction bipolar transistors (HBT's) on Si substrates grown by molecular beam epitaxy (MBE) have been fabricated and tested…”
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Optical properties of GaN grown on ZnO by reactive molecular beam epitaxy by Hamdani, F., Botchkarev, A., Kim, W., Morkoç, H., Yeadon, M., Gibson, J. M., Tsen, S.-C. Y., Smith, David J., Reynolds, D. C., Look, D. C., Evans, K., Litton, C. W., Mitchel, W. C., Hemenger, P.

“…High quality wurtzite GaN epilayers have been grown on ZnO(0001) substrates by reactive molecular beam epitaxy. Photoluminescence and reflectivity measurements…”
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Investigation of Defects and Polarity in GaN Using Hot Wet Etching, Atomic Force and Transmission Electron Microscopy and Convergent Beam Electron Diffraction by Visconti, P., Huang, D., Reshchikov, M.A., Yun, F., King, T., Baski, A.A., Cingolani, R., Litton, C.W., Jasinski, J., Liliental-Weber, Z., Morkoç, H.

“…Availability of reliable and quick methods to investigate defects and polarity in GaN films is of great interest. We have used photo‐electrochemical (PEC) and…”
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A Comparative Study of MBE-Grown GaN Films Having Predominantly Ga- or N-Polarity by Yun, F., Huang, D., Reshchikov, M.A., King, T., Baski, A.A., Litton, C.W., Jasinski, J., Liliental-Weber, Z., Visconti, P., Morkoç, H.

“…Wurtzitic GaN epilayers having both Ga and N‐polarity were grown by reactive molecular beam epitaxy (MBE) using a plasma‐activated nitrogen source on c‐plane…”
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Polarity of GaN Grown on Sapphire by Molecular Beam Epitaxy with Different Buffer Layers by Huang, D., Visconti, P., Reshchikov, M.A., Yun, F., King, T., Baski, A.A., Litton, C.W., Jasinski, J., Liliental-Weber, Z., Morkoç, H.

“…We report on polarity of GaN films grown on sapphire substrates by molecular beam epitaxy using different buffer layers and growth conditions. On high…”
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Determination of defect pair orientation in ZnO by REYNOLDS, D. C, LOOK, D. C, JOGAI, B, LITTON, C. W, CANTWELL, G, HARSCH, W. C

“…The orientation of defect pairs with respect to the crystallographic axes was determined in ZnO. In a specific orientation of the strain with respect to the c…”
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A high-performance InGaAs/InAlAs double-heterojunction bipolar transistor with nonalloyed n/sup +/-InAs cap layer on InP(n) grown by molecular beam epitaxy by Peng, C.K., Won, T., Litton, C.W., Morkoc, H.

“…An InGaAs/InAlAs double-heterojunction bipolar transistor (DHBT) on InP(n) grown by molecular-beam epitaxy (MBE) that exhibits high DC performance is…”
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Comparison of OMVPE and MBE grown AlGaAs/InGaAs PHEMT structures by LAREAU, R. T, JONES, K. A, MONAHAN, T, FLEMISH, J. R, PFEFFER, R. L, SHERRIFF, R. E, LITTON, C. W, JONES, R, STUTZ, C. E, LOOK, D. C

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Design of enhanced Schottky-barrier AlGaAs/GaAs MODFET's using highly doped p+surface layers by Priddy, K.L., Kitchen, D.R., Grzyb, J.A., Litton, C.W., Henderson, T.S., Chin-Kun Peng, Kopp, W.F., Morkoc, H.

“…The design and performance of enhanced Schottky-barrier height modulation-doped AlGaAs/GaAs field-effect transistors (ESMODFET's) is discussed. Results are…”
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Growth and properties of n- and p-type ZnO by Litton, C.W., Look, D.C., Claflin, B.B., Reynolds, D.C., Cantwell, G., Eason, D.B., Worley, R.D.

“…We will focus our attention on growth and properties of low-resistivity, n-type ZnO single crystals (/spl mu//sub e/ /spl sim/ 230 cm/sup 2//V-s, n/sub e/ /spl…”
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Electrical and optical properties of as-grown and electron-irradiated ZnO by Look, D.C., Reynolds, D.C., Hemsky, J.W., Sizelove, J.R., Jones, R.L., Litton, C.W., Wille, T., Cantwell, G., Harsch, W.C.

“…Large-diameter (up to 3-inch), n-type ZnO boules grown by a new vapor-phase transport method were studied by temperature-dependent Hall-effect (TDH) and…”
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