Search Results - "Lishan, D.G."

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  1. 1

    Cl sub 2 and HCl radical beam etching of GaAs and InP by Lishan, D.G., Hu, E.L.

    Published in Applied physics letters (23-04-1990)
    “…Both the thermally activated and remote plasma activated etching reactions between Cl{sub 2} and HCl gases and GaAs and InP substrates are characterized…”
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    Journal Article
  2. 2

    Remote plasma etching of InP in Cl2 and HCl by Lishan, D.G., Hu, E.L.

    “…An attempt is made to add insight into the expectation that in the dry etching of InP, increased temperatures should assist etching even in ion enhanced…”
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    Conference Proceeding
  3. 3

    High-frequency electrooptic Fabry-Perot modulators by Simes, R.J., Yan, R.H., Barron, C.C., Derrickson, D., Lishan, D.G., Karin, J., Coldren, L.A., Rodwell, M., Elliot, S., Hughes, B.

    Published in IEEE photonics technology letters (01-06-1991)
    “…Electrooptic modulators built from GaAs/Al/sub x/Ga/sub 1-x/As Fabry-Perot cavities operating up to 6.5 GHz are reported. The measured frequency response…”
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    Journal Article
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    Investigation of reactive ion etching induced damage in GaAs–AlGaAs quantum well structures by Wong, H. F., Green, D. L., Liu, T. Y., Lishan, D. G., Bellis, M., Hu, E. L., Petroff, P. M., Holtz, P. O., Merz, J. L.

    “…We report on the use of a novel technique to study reactive ion etching (RIE) induced damage using multiple quantum wells of 20‐, 40‐, 60‐, and 90‐Å widths as…”
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    Journal Article