Search Results - "Lischka, K"

Morphology and Dendrite-Specific Synaptic Properties of Midbrain Neurons Shape Multimodal Integration by Weigel, S, Kuenzel, T, Lischka, K, Huang, G, Luksch, H

“…Multimodal integration facilitates object recognition and response to sensory cues. This depends on spatiotemporal coincidence of sensory information,…”
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MBE growth of atomically smooth non-polar cubic AlN by Schupp, T., Lischka, K., As, D.J.

“…Atomically smooth cubic AlN (c-AlN) layers were grown by plasma assisted molecular beam epitaxy (PAMBE) using freestanding 3C–SiC substrates. A model based on…”
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Spin dephasing of fluorine-bound electrons in ZnSe by Greilich, A, Pawlis, A, Liu, F, Yugov, O A, Yakovlev, D R, Lischka, K, Yamamoto, Y, Bayer, M

“…The spin coherence of an ensemble of electrons bound to fluorine donors in epitaxially grown ZnSe layers is studied by time-resolved pump-probe Kerr rotation…”
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In situ growth regime characterization of cubic GaN using reflection high energy electron diffraction by Schörmann, J., Potthast, S., As, D. J., Lischka, K.

“…Cubic GaN layers were grown by plasma-assisted molecular beam epitaxy on 3 C - Si C (001) substrates. In situ reflection high energy electron diffraction was…”
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Band offsets in cubic GaN/AlN superlattices by Mietze, C., Landmann, M., Rauls, E., Machhadani, H., Sakr, S., Tchernycheva, M., Julien, F. H., Schmidt, W. G., Lischka, K., As, D. J.

“…The presently unknown band offset in nonpolar cubic GaN/AlN superlattices is investigated by inter-sub-band and interband spectroscopies as well as ab initio…”
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Universality of electron accumulation at wurtzite c - and a -plane and zinc-blende InN surfaces by King, P. D. C., Veal, T. D., McConville, C. F., Fuchs, F., Furthmüller, J., Bechstedt, F., Schley, P., Goldhahn, R., Schörmann, J., As, D. J., Lischka, K., Muto, D., Naoi, H., Nanishi, Y., Lu, Hai, Schaff, W. J.

“…Electron accumulation is found to occur at the surface of wurtzite ( 11 2 ¯ 0 ) , (0001), and ( 000 1 ¯ ) and zinc-blende (001) InN using x-ray photoemission…”
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Current-voltage characteristics of cubic Al(Ga)N/GaN double barrier structures on 3C-SiC by Mietze, C., Lischka, K., As, D. J.

“…Resonant tunnelling diodes of cubic Al(Ga)N/GaN were grown by plasma assisted molecular beam epitaxy on 3C‐SiC (001). We observe a pronounced negative…”
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Molecular beam epitaxy of phase pure cubic InN by Schörmann, J., As, D. J., Lischka, K., Schley, P., Goldhahn, R., Li, S. F., Löffler, W., Hetterich, M., Kalt, H.

“…Cubic InN layers were grown by plasma assisted molecular beam epitaxy on 3 C - Si C (001) substrates at growth temperatures from 419 to 490 ° C . X-ray…”
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Photon antibunching and magnetospectroscopy of a single fluorine donor in ZnSe by De Greve, K., Clark, S. M., Sleiter, D., Sanaka, K., Ladd, T. D., Panfilova, M., Pawlis, A., Lischka, K., Yamamoto, Y.

“…We report on the optical investigation of single electron spins bound to fluorine donor impurities in ZnSe. Measurements of photon antibunching confirm the…”
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Semiconductor qubits based on fluorine implanted ZnMgSe/ZnSe quantum-well nanostructures by Kim, Y. M., Sleiter, D., Sanaka, K., Yamamoto, Y., Meijer, J., Lischka, K., Pawlis, A.

“…It has been shown that the excitons bound to individual donors in epitaxially grown ZnMgSe/ZnSe quantum-well (QW) nanostructures provide suitable single-photon…”
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Nonpolar cubic AlGaN/GaN heterojunction field-effect transistor on Ar + implanted 3C-SiC (001) by Tschumak, E., Granzner, R., Lindner, J. K. N., Schwierz, F., Lischka, K., Nagasawa, H., Abe, M., As, D. J.

“…A heterojunction field-effect transistor (HFET) was fabricated of nonpolar cubic AlGaN/GaN grown on Ar + implanted 3C-SiC (001) by molecular beam epitaxy. The…”
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Optically controlled initialization and read-out of an electron spin bound to a fluorine donor in ZnSe by Kim, Y.M., Sleiter, D., Sanaka, K., Reuter, D., Lischka, K., Yamamoto, Y., Pawlis, A.

“…Here we report photon antibunching and magneto-spectroscopy of a single electron spin bound to a fluorine donor in a ZnMgSe/ZnSe QW nanostructure. The results…”
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Lasing of donor-bound excitons in ZnSe microdisks by Pawlis, A., Panfilova, M., As, D. J., Lischka, K., Sanaka, K., Ladd, T. D., Yamamoto, Y.

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Phase separation suppression in InGaN epitaxial layers due to biaxial strain by Tabata, A., Teles, L. K., Scolfaro, L. M. R., Leite, J. R., Kharchenko, A., Frey, T., As, D. J., Schikora, D., Lischka, K., Furthmüller, J., Bechstedt, F.

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Carbon as an acceptor in cubic GaN/3C–SiC by Zado, A., Tschumak, E., Gerlach, J.W., Lischka, K., As, D.J.

“…We report on carbon doping of cubic GaN by CBr4 using plasma-assisted molecular beam epitaxy. Cubic GaN:C samples were doped at different CBr4 beam equivalent…”
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Droplet epitaxy of zinc-blende GaN quantum dots by Schupp, T., Meisch, T., Neuschl, B., Feneberg, M., Thonke, K., Lischka, K., As, D.J.

“…Zinc-blende GaN quantum dots were grown on 3C-AlN(0 0 1) by a vapor–liquid–solid process in a molecular beam epitaxy system. We were able to control the…”
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Cubic III-nitrides—a key to understand radiative recombination in nitride heterostructures? by Lischka, K.

“…Besides the well known hexagonal (wurtzite) phase the group III-nitrides can also exist in the metastable cubic (zincblende) modification. One of the…”
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Zinc-blende GaN quantum dots grown by vapor–liquid–solid condensation by Schupp, T., Meisch, T., Neuschl, B., Feneberg, M., Thonke, K., Lischka, K., As, D.J.

“…Vapor–liquid–solid condensation was utilized to fabricate zinc-blende GaN quantum dots on 3C-AlN (001) in a molecular beam epitaxy system. By adjustment of…”
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Near ultraviolet emission from nonpolar cubic AlxGa1−xN∕GaN quantum wells by Schörmann, J., Potthast, S., As, D. J., Lischka, K.

“…In this contribution the authors studied the optical properties of cubic AlxGa1−xN∕GaN single and multiple quantum wells. The well widths ranged from…”
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The near band edge photoluminescence of cubic GaN epilayers by As, D. J., Schmilgus, F., Wang, C., Schöttker, B., Schikora, D., Lischka, K.

“…The near band edge photoluminescence (PL) of cubic GaN epilayers grown by radio frequency (rf) plasma-assisted molecular beam epitaxy on (100) GaAs is…”
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