Search Results - "Linjun Cao"
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1
Grain structure analysis and effect on electromigration reliability in nanoscale Cu interconnects
Published in Applied physics letters (01-04-2013)“…The grain structure in Cu interconnects of the 45 nm node was analyzed to yield grain orientation and boundary characteristics using a high-resolution electron…”
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Journal Article -
2
Impact of TSV process on 14nm FEOL and BEOL reliability
Published in 2017 IEEE International Reliability Physics Symposium (IRPS) (01-04-2017)“…This paper presents the impact of Through Silicon Via (TSV) process on wafer level reliability with respect to front-end of line (FEOL) and back-end of line…”
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Conference Proceeding -
3
Influence of stress induced CT local layout effect (LLE) on 14nm FinFET
Published in 2017 Symposium on VLSI Technology (01-06-2017)“…In this paper, we present a new local layout effect in 14nm FinFET due to different CT layout designs (CT extension, CT spacing, and PC past RX distance)…”
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4
Electromigration reliability of Mn-doped Cu interconnects for the 28 nm technology
Published in 2013 IEEE International Reliability Physics Symposium (IRPS) (01-04-2013)“…Electromigration (EM) reliability of Cu interconnects for the 28 nm node with Mn doping was studied by investigating the effects of line width and length on…”
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Conference Proceeding -
5
Scaling effects on microstructure and electromigration reliability for Cu and Cu(Mn) interconnects
Published in 2014 IEEE International Reliability Physics Symposium (01-06-2014)“…EM reliability of Cu and Cu(Mn) interconnects was investigated, focusing on the scaling effect on grain structure and mass transport. The microstructure of Cu…”
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Conference Proceeding -
6
Low-toxic gelcasting of zircon ceramics
Published in Ceramics international (15-10-2024)“…Zircon (ZrSiO4) ceramics are highly valued in various industries due to their exceptional physical and chemical properties. In the present work, zircon…”
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Journal Article -
7
New analytical equations for skin and proximity effects in interconnects operated at high frequency
Published in 2017 IEEE Electron Devices Technology and Manufacturing Conference (EDTM) (01-02-2017)“…For the first time, analytical equations for skin and proximity effects are derived to successfully describe current distributions in advanced CMOS technology…”
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8
High-strength and low-dielectric ZrO2 reinforced fused silica ceramics by gelcasting
Published in Ceramics international (01-10-2024)Get full text
Journal Article -
9
Effect of metal line width on electromigration of BEOL Cu interconnects
Published in 2018 IEEE International Reliability Physics Symposium (IRPS) (01-03-2018)“…Electromigration reliability of BEOL Cu interconnects with various metal line widths and via sizes has been studied. EM lifetime significantly improves from…”
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Conference Proceeding -
10
Microstructure Evolution and Effect on Resistivity for Cu Nanointerconnects and Beyond
Published in 2018 IEEE International Electron Devices Meeting (IEDM) (01-12-2018)“…In this paper, we investigate the microstructure evolution in Cu, Co and Ru nanointerconnects and the scaling effect on resistivity. The scaling effect on…”
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11
Microstructure Evolution and Implications for Cu Nanointerconnects and Beyond
Published in 2018 IEEE International Interconnect Technology Conference (IITC) (01-06-2018)“…The continued scaling of Cu low k technology is facing serious challenges imposed by basic limits from materials, processing and reliability. This has…”
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12
Comprehensive 3D TSV Reliability Study on 14nm FINFET Technology with Thinned Wafers
Published in 2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM) (01-03-2018)“…The impact of wafer level reliability of TSV has been studied with respect to FEOL (Front End of Line) and BEOL (Back End of Line) reliability. A TSV keep out…”
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Conference Proceeding