Search Results - "Linjun Cao"

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  1. 1

    Grain structure analysis and effect on electromigration reliability in nanoscale Cu interconnects by Cao, Linjun, Ganesh, K. J., Zhang, Lijuan, Aubel, Oliver, Hennesthal, Christian, Hauschildt, Meike, Ferreira, Paulo J., Ho, Paul S.

    Published in Applied physics letters (01-04-2013)
    “…The grain structure in Cu interconnects of the 45 nm node was analyzed to yield grain orientation and boundary characteristics using a high-resolution electron…”
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    Journal Article
  2. 2

    Impact of TSV process on 14nm FEOL and BEOL reliability by Kannan, Sukeshwar, Premachandran, C. S., Smith, Daniel, Ranjan, Rakesh, Cimino, Salvatore, Kong Boon Yeap, Wu, George, Linjun Cao, Prabhu, Manjunatha, Agarwal, Rahul, Yao, Walter, England, Luke, Justison, Patrick

    “…This paper presents the impact of Through Silicon Via (TSV) process on wafer level reliability with respect to front-end of line (FEOL) and back-end of line…”
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    Conference Proceeding
  3. 3

    Influence of stress induced CT local layout effect (LLE) on 14nm FinFET by Pei Zhao, Pandey, Shesh Mani, Banghart, Edmund, Xiaoli He, Asra, Ram, Mahajan, Vinayak, Haojun Zhang, Baofu Zhu, Yamada, Kenta, Linjun Cao, Balasubramaniam, Pala, Joshi, Manoj, Eller, Manfred, Benistant, Francis, Samavedam, Srikanth

    Published in 2017 Symposium on VLSI Technology (01-06-2017)
    “…In this paper, we present a new local layout effect in 14nm FinFET due to different CT layout designs (CT extension, CT spacing, and PC past RX distance)…”
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    Conference Proceeding
  4. 4

    Electromigration reliability of Mn-doped Cu interconnects for the 28 nm technology by Linjun Cao, Ho, P. S., Justison, P.

    “…Electromigration (EM) reliability of Cu interconnects for the 28 nm node with Mn doping was studied by investigating the effects of line width and length on…”
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    Conference Proceeding
  5. 5

    Scaling effects on microstructure and electromigration reliability for Cu and Cu(Mn) interconnects by Linjun Cao, Lijuan Zhang, Ho, Paul S., Justison, Patrick, Hauschildt, Meike

    “…EM reliability of Cu and Cu(Mn) interconnects was investigated, focusing on the scaling effect on grain structure and mass transport. The microstructure of Cu…”
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    Conference Proceeding
  6. 6

    Low-toxic gelcasting of zircon ceramics by Wan, Wei, Cao, Linjun, Yin, Shuang, Luo, Junrong, Zhang, Yeming, Zhang, Jiaxu, Ouyang, Yuejun

    Published in Ceramics international (15-10-2024)
    “…Zircon (ZrSiO4) ceramics are highly valued in various industries due to their exceptional physical and chemical properties. In the present work, zircon…”
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    Journal Article
  7. 7

    New analytical equations for skin and proximity effects in interconnects operated at high frequency by Haojun Zhang, Jian-Hsing Lee, Iyer, Natarajan Mahadeva, Linjun Cao

    “…For the first time, analytical equations for skin and proximity effects are derived to successfully describe current distributions in advanced CMOS technology…”
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    Conference Proceeding
  8. 8
  9. 9

    Effect of metal line width on electromigration of BEOL Cu interconnects by Choi, Seungman, Christiansen, Cathryn, Cao, Linjun, Zhang, James, Filippi, Ronald, Shen, Tian, Yeap, Kong Boon, Ogden, Sean, Zhang, Haojun, Fu, Bianzhu, Justison, Patrick

    “…Electromigration reliability of BEOL Cu interconnects with various metal line widths and via sizes has been studied. EM lifetime significantly improves from…”
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    Conference Proceeding
  10. 10

    Microstructure Evolution and Effect on Resistivity for Cu Nanointerconnects and Beyond by Hu, Szu-Tung, Cao, Linjun, Spinella, Laura, Ho, Paul S.

    “…In this paper, we investigate the microstructure evolution in Cu, Co and Ru nanointerconnects and the scaling effect on resistivity. The scaling effect on…”
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    Conference Proceeding
  11. 11

    Microstructure Evolution and Implications for Cu Nanointerconnects and Beyond by Hu, Szu-Tung, Ho, Paul S., Cao, Linjun, Spinella, Laura

    “…The continued scaling of Cu low k technology is facing serious challenges imposed by basic limits from materials, processing and reliability. This has…”
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    Conference Proceeding
  12. 12

    Comprehensive 3D TSV Reliability Study on 14nm FINFET Technology with Thinned Wafers by Premachandran, C.S., Ranjan, Rakesh, England, Luke, Justison, Patrick, Cimino, Salvatore, Ogdan, Sean, Wu, Zhuo-Jie, Smith, Daniel, Kannan, Sukesh, Cao, Linjun, Prabhu, Manjunatha, Yao, Walter

    “…The impact of wafer level reliability of TSV has been studied with respect to FEOL (Front End of Line) and BEOL (Back End of Line) reliability. A TSV keep out…”
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    Conference Proceeding