Search Results - "Lindquist, Miles"

Self-Heating Characterization of \beta -Ga2O3 Thin-Channel MOSFETs by Pulsed - and Raman Nanothermography by Blumenschein, Nicholas A., Moule, Taylor, Dalcanale, Stefano, Mercado, Elisha, Singh, Manikant, Pomeroy, James W., Kuball, Martin, Wagner, Gunter, Paskova, Tania, Muth, John F., Chabak, Kelson D., Moser, Neil A., Jessen, Gregg H., Heller, Eric R., Miller, Nicholas C., Green, Andrew J., Popp, Andreas, Crespo, Antonio, Leedy, Kevin, Lindquist, Miles

“…β-Ga 2 O 3 thin-channel MOSFETs were evaluated using both dc and pulsed I-V measurements. The reported pulsed I-V technique was used to study selfheating…”
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Growth of Complex 2D Material-Based Structures with Naturally Formed Contacts by Aleithan, Shrouq H, Wickramasinghe, Thushan E, Lindquist, Miles, Khadka, Sudiksha, Stinaff, Eric

“…The difficulty of processing two-dimensional (2D) transition metal dichalcogenide (TMD) materials into working devices with any scalability is one of the…”
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Isothermal Characterization of Traps in GaN HEMTs Operating in Class B Using a Real-Time Pulsed-RF NVNA Testbed by Lindquist, Miles, Roblin, Patrick, Mikrut, Dominic, Nichols, Matthew J., Miller, Nicholas C.

“…This article presents a real-time nonlinear vector network analyzer (NVNA) testbed that enables the acquisition of the isothermal transient response of GaN…”
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ScAlN/GaN High-Electron-Mobility Transistors With 2.4-A/mm Current Density and 0.67-S/mm Transconductance by Green, Andrew J., Gillespie, James K., Fitch, Robert C., Walker, Dennis E., Lindquist, Miles, Crespo, Antonio, Brooks, Dan, Beam, Edward, Xie, Andy, Kumar, Vipan, Jimenez, Jose, Lee, Cathy, Cao, Yu, Chabak, Kelson D., Jessen, Gregg H.

“…We report the dc and RF performance of ScAlN/GaN high-electron-mobility transistors (HEMTs). The ScAlN/GaN material was epitaxially grown onto a GaN template…”
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RF Power Performance of Sc(Al,Ga)N/GaN HEMTs at Ka-Band by Green, Andrew J., Moser, Neil, Miller, Nicholas C., Liddy, Kyle J., Lindquist, Miles, Elliot, Michael, Gillespie, James K., Fitch, Robert C., Gilbert, Ryan, Walker, Dennis E., Werner, Elizabeth, Crespo, Antonio, Beam, Edward, Xie, Andy, Lee, Cathy, Cao, Yu, Chabak, Kelson D.

“…We report the RF power results of Sc(Al,Ga)N/GaN high electron mobility transistors (HEMTs). We show dc, small-signal RF and load-pull performance at 30 GHz…”
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New Real-Time Pulsed-RF NVNA Testbed for Isothermal Characterization of Traps in GaN HEMTs by Lindquist, Miles, Roblin, Patrick, Miller, Nicholas C.

“…This paper presents an oscilloscope-based nonlinear vector network analyzer (NVNA) capable of capturing real-time measurements of pulsed large-signal…”
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Pulsed Power Performance of β-Ga₂O₃ MOSFETs at L-Band by Moser, Neil A., Asel, Tadj, Liddy, Kyle J., Lindquist, Miles, Miller, Nicholas C., Mou, Shin, Neal, Adam, Walker, Dennis E., Tetlak, Steve, Leedy, Kevin D., Jessen, Gregg H., Green, Andrew J., Chabak, Kelson D.

“…DC, small, and large signal results are shown under continuous wave and pulsed conditions for a β-Ga 2 O 3 metal-oxide-semiconductor field-effect transistor…”
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Complementary growth of 2D transition metal dichalcogenide semiconductors on metal oxide interfaces by Wickramasinghe, Thushan E., Jensen, Gregory, Thorat, Ruhi, Lindquist, Miles, Aleithan, Shrouq H., Stinaff, Eric

“…A chemical vapor deposition (CVD) growth model is presented for a technique resulting in naturally formed 2D transition metal dichalcogenide (TMD)-based…”
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Experimentally Validated Gate-Lag Simulations of AlGaN/GaN HEMTs Using Fermi Kinetics Transport by Miller, Nicholas C., Grupen, Matt, Islam, Ahmad E., Albrecht, John D., Frey, Dave, Young, Richard, Lindquist, Miles, Green, Andrew J., Walker, Dennis E., Chabak, Kelson D.

“…This article presents for the first time a direct connection between gate lag observed in drain current transient measurements of gallium nitride (GaN)…”
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As-grown two-dimensional MoS2 based photodetectors with naturally formed contacts by Khadka, Sudiksha, Wickramasinghe, Thushan E., Lindquist, Miles, Thorat, Ruhi, Aleithan, Shrouq H., Kordesch, Martin E., Stinaff, Eric

“…Scalable fabrication of two-dimensional materials-based devices with consistent characteristics remains a significant impediment in the field. Here, we report…”
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Calibration of an Oscilloscope-Based NVNA for Periodic Modulated Signals by Lindquist, Miles, Roblin, Patrick

“…This paper presents a new calibration procedure for oscilloscope-based nonlinear vector network analyzer (NVNA) for the acquisition of periodic modulated…”
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Self-Heating Characterization of $\beta$ -Ga 2 O 3 Thin-Channel MOSFETs by Pulsed ${I}$ –${V}$ and Raman Nanothermography by Blumenschein, Nicholas A., Moule, Taylor, Dalcanale, Stefano, Mercado, Elisha, Singh, Manikant, Pomeroy, James W., Kuball, Martin, Wagner, Gunter, Paskova, Tania, Muth, John F., Chabak, Kelson D., Moser, Neil A., Jessen, Gregg H., Heller, Eric R., Miller, Nicholas C., Green, Andrew J., Popp, Andreas, Crespo, Antonio, Leedy, Kevin, Lindquist, Miles

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Self-Heating Characterization of [Formula Omitted]-Ga2O3 Thin-Channel MOSFETs by Pulsed [Formula Omitted]–[Formula Omitted] and Raman Nanothermography by Blumenschein, Nicholas A, Taylor Moule, Dalcanale, Stefano, Mercado, Elisha, Singh, Manikant, Pomeroy, James W, Kuball, Martin, Wagner, Gunter, Paskova, Tania, Muth, John F, Chabak, Kelson D, Moser, Neil A, Jessen, Gregg H, Heller, Eric R, Miller, Nicholas C, Green, Andrew J, Popp, Andreas, Crespo, Antonio, Leedy, Kevin, Lindquist, Miles

“…[Formula Omitted]-Ga2O3 thin-channel MOSFETs were evaluated using both dc and pulsed [Formula Omitted]–[Formula Omitted] measurements. The reported pulsed…”
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Monolayers: Concurrent Growth and Formation of Electrically Contacted Monolayer Transition Metal Dichalcogenides on Bulk Metallic Patterns (Adv. Mater. Interfaces 4/2017) by Khadka, Sudiksha, Lindquist, Miles, Aleithan, Shrouq H., Blumer, Ari N., Wickramasinghe, Thushan E., Kordesch, Martin E., Stinaff, Eric

“…A chemical vapor deposition process resulting in self‐contacted as‐grown 2D materials‐based devices is described by Eric Stinaff and co‐workers. The center of…”
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Concurrent Growth and Formation of Electrically Contacted Monolayer Transition Metal Dichalcogenides on Bulk Metallic Patterns by Khadka, Sudiksha, Lindquist, Miles, Aleithan, Shrouq H., Blumer, Ari N., Wickramasinghe, Thushan E., Kordesch, Martin E., Stinaff, Eric

“…A process for the growth of self‐contacting monolayers to bulk metallic contacts is reported. Monolayer films, grown on and around patterns of bulk transition…”
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Self-Aligned Gate Thin-Channel β-Ga2O3MOSFETs by Liddy, Kyle J., Hendricks, Nolan S., Green, Andrew J., Popp, Andreas, Lindquist, Miles T., Leedy, Kevin D., Tetlak, Stephen E., Moser, Neil A., Wagner, Gunter, Chabak, Kelson D., Jessen, Gregg H.

“…Beta-phase gallium oxide (\beta-\mathrm{Ga}_{2}\mathrm{O}_{3}) has shown promise as a next-generation wide-bandgap semiconductor for use in power electronics…”
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Chemical Vapor Deposition: Concurrent Growth and Formation of Electrically Contacted Monolayer Transition Metal Dichalcogenides on Bulk Metallic Patterns by Khadka, Sudiksha, Lindquist, Miles, Aleithan, Shrouq H, Blumer, Ari N, Wickramasinghe, Thushan E, Kordesch, Martin E, Stinaff, Eric

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A Comparison Study on the Broadband Performance of Load-Modulated Architectures using Nonlinear Embedding at 20 GHz by Mikrut, Dominic, Roblin, Patrick, Lindquist, Miles, Miller, Nicholas, Frey, David

“…This paper presents a comparison study of Doherty, LMBA, and Hybrid Chireix-Doherty Outphasing PAs using a nonlinear embedding model at 20 GHz…”
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Experimental Validation of ASM-HEMT Nonlinear Embedding Modeling of GaN HEMTs at X-band by Lindquist, Miles, Roblin, Patrick, Miller, Nicholas C., Davis, Devin, Gilbert, Ryan, Elliott, Michael

“…This paper presents the experimental results from a validation of a newly-developed nonlinear embedding model for the GaN ASM-HEMT model. An extracted ASM-HEMT…”
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Accurate Nonlinear GaN HEMT Simulations from X- to Ka-Band using a Single ASM-HEMT Model by Miller, Nicholas C., Moser, Neil A., Fitch, Robert C., Gillespie, James K., Liddy, Kyle J., Walker, Dennis E., Green, Andrew J., Chabak, Kelson D., Elliott, Michael, Gilbert, Ryan, Young, Richard, Werner, Elizabeth, Lindquist, Miles, Roblin, Patrick

“…This paper presents for the first time an investigation of the ASM-HEMT model large-signal accuracy across a wide range of operating frequencies. Comparisons…”
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