Search Results - "Lindley, W.T."

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    High-temperature point-contact transistors and Schottky diodes formed on synthetic boron-doped diamond by Geis, M.W., Rathman, D.D., Ehrlich, D.J., Murphy, R.A., Lindley, W.T.

    Published in IEEE electron device letters (01-08-1987)
    “…Point-contact transistors and Schottky diodes have been formed on synthetic boron-doped diamond. This is the first report of diamond transistors that have…”
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    Journal Article
  2. 2

    Use of zone-melting recrystallization to fabricate a three-dimensional structure incorporating power bipolar and field-effect transistors by Geis, M.W., Chen, C.K., Mountain, R.W., Economou, N.P., Lindley, W.T., Hower, P.L.

    Published in IEEE electron device letters (01-01-1986)
    “…Three-dimensional (3-D) structures have been fabricated incorporating power bipolar transistors in a Si substrate and metal-oxide-semiconductor field-effect…”
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    Journal Article
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