Search Results - "Lindholm, F.A."

Theory of grain-boundary and intragrain recombination currents in polysilicon p-n-junction solar cells by Fossum, J.G., Lindholm, F.A.

“…The physics controlling recombination in polysilicon p-n-junction solar cells is described. Analytic models characterizing this recombination, whose parameters…”
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Application of the superposition principle to solar-cell analysis by Lindholm, F.A., Fossum, J.G., Burgess, E.L.

“…The principle of superposition is used to derive from fundamentals the widely used shifting approximation that the current-voltage characteristic of an…”
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Dember effect in fast photoconductive circuit elements by Bor-Yuan Hwang, Lindholm, F.A.

“…The observed independence of mobility on surface conditions in InP:Fe fast photoconductivity devices is explained by inclusion of the Dember electric field…”
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Effects on the open-circuit voltage of grain boundaries within the junction space-charge region of polycrystalline solar cells by Fossum, J.G., Lindholm, F.A.

“…A physical explanation is given for the observed dependence of open-circuit voltage on grain size in polycrystalline solar cells when no such dependence is…”
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Rigid band analysis of heavily doped semiconductor devices by Marshak, A.H., Shibib, M.A., Fossum, J.G., Lindholm, F.A.

“…The conventional carrier transport equations used in device analysis must be modified for heavily doped semiconductor regions. The modifications to Shoekley's…”
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A methodology for experimentally based determination of gap shrinkage and effective lifetimes in the emitter and base of p-n junction solar cells and other p-n junction devices by Lindholm, F.A., Neugroschel, A., Chih-Tang Sah, Godlewski, M.P., Brandhorst, H.W.

“…An experimentally based methodology is described that determines the effective gap shrinkage and lifetime in the emitter of a p-n junction solar cell. It…”
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A new charge-control model for single- and double-heterojunction bipolar transistors by Parikh, C.D., Lindholm, F.A.

“…A new charge-control relation is derived for heterojunction bipolar transistors. The relation is valid for arbitrary doping density profiles and for all levels…”
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Reply to "comments on 'a method for determining energy gap narrowing in highly doped semiconductors'" by Neugroschel, A., Lindholm, F.A.

“…The interpretation by del Alamo and Swanson of recombination-current data in highly doped silicon is clarified by making explicit their key assumptions. This…”
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Space-charge region recombination in heterojunction bipolar transistors by Parikh, C.D., Lindholm, F.A.

“…A new comprehensive model for space-charge region (SCR) recombination current in abrupt and graded energy gap heterojunction bipolar transistors (HBTs) is…”
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Foreword by Lindholm, F.A., Rappaport, P.

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Foreword by Lindholm, F.A., Rappaport, P.

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Systematic analytical solutions for minority-carrier transport in semiconductors with position-dependent composition, with application to heavily doped silicon by Jong-Sik Park, Neugroschel, A., Lindholm, F.A.

“…For quasi-neutral regions of semiconductor devices with position-dependent composition, we have derived expressions for the position dependence of the excess…”
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One-dimensional non-quasi-static models for arbitrarily and heavily doped quasi-neutral layers in bipolar transistors by Wu, B.S., Lindholm, F.A.

“…A systematic method is presented for deriving non-quasi-static equivalent-circuit models for arbitrarily doped and heavily doped quasi-neutral layers in…”
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Forward-voltage capacitance and thickness of p-n junction space-charge regions by Liou, J.J., Lindholm, F.A., Park, J.S.

“…A comprehensive analytical model for the quasi-static capacitance of the space-charge region of p-n junction devices is presented. It describes the capacitance…”
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One-dimensional all injection nonquasi-static models for arbitrarily doped quasi-neutral layers in bipolar junction transistors including plasma-induced energy-gap narrowing by Wu, B.S., Lindholm, F.A.

“…Nonquasi-static circuit models accounting for carrier propagation delay in quasi-neutral layers are presented for bipolar junction transistors operating at all…”
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Heavily doped polysilicon-contact solar cells by Lindholm, F.A., Neugroschel, A., Arienzo, M., Iles, P.A.

“…We report the first use of a (silicon)/(heavily doped polysilicon)/(metal) structure to replace the conventional high-low junction or back-surface-field (BSF)…”
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Evidence for low diffusivity and mobility of minority carriers in highly doped Si and interpretation by Neugroschel, A, Lindholm, F A

“…Experimental evidence for low minority-carrier diffusivity and mobility in highly doped Si:As is presented and explained by a simple model. The model…”
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Capacitance of semiconductor p-n junction space-charge layers: an overview by Liou, J.J., Lindholm, F.A.

“…The modeling of capacitance of p-n junction space-charge layers in semiconductor devices is discussed. First, previously developed models and methods are…”
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Large-signal and small-signal models for arbitrarily-doped four-terminal field-effect transistors by Lindholm, F.A., Gray, P.R.

“…Models are derived for a four-terminal field-effect transistor (FTFET) with an arbitrary (one-dimensional) impurity distribution. The models apply for both…”
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Measurement circuits for silicon-diode and solar-cell lifetime and surface recombination velocity by electrical short-circuit current decay by Zondervan, A., Verhoef, L.A., Lindholm, F.A.

“…Two improved switching circuits for transient electrical short-circuit decay are presented that allow more accurate determination of base-region…”
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