Search Results - "Lindholm, F A"

Heavily doped polysilicon-contact solar cells by Lindholm, F.A., Neugroschel, A., Arienzo, M., Iles, P.A.

“…We report the first use of a (silicon)/(heavily doped polysilicon)/(metal) structure to replace the conventional high-low junction or back-surface-field (BSF)…”
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Space-charge region recombination in heterojunction bipolar transistors by Parikh, C.D., Lindholm, F.A.

“…A new comprehensive model for space-charge region (SCR) recombination current in abrupt and graded energy gap heterojunction bipolar transistors (HBTs) is…”
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Systematic analytical solutions for minority-carrier transport in semiconductors with position-dependent composition, with application to heavily doped silicon by Jong-Sik Park, Neugroschel, A., Lindholm, F.A.

“…For quasi-neutral regions of semiconductor devices with position-dependent composition, we have derived expressions for the position dependence of the excess…”
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One-dimensional non-quasi-static models for arbitrarily and heavily doped quasi-neutral layers in bipolar transistors by Wu, B.S., Lindholm, F.A.

“…A systematic method is presented for deriving non-quasi-static equivalent-circuit models for arbitrarily doped and heavily doped quasi-neutral layers in…”
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Evidence for excess carrier storage in electron-hole plasma in silicon transistors by Neugroschel, A., Wang, J.S., Lindholm, F.A.

“…This work presents experimental evidence for significantly greater charge storage in highly excited silicon near room temperature than conventional theory…”
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One-dimensional all injection nonquasi-static models for arbitrarily doped quasi-neutral layers in bipolar junction transistors including plasma-induced energy-gap narrowing by Wu, B.S., Lindholm, F.A.

“…Nonquasi-static circuit models accounting for carrier propagation delay in quasi-neutral layers are presented for bipolar junction transistors operating at all…”
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Evidence for low diffusivity and mobility of minority carriers in highly doped Si and interpretation by Neugroschel, A, Lindholm, F A

“…Experimental evidence for low minority-carrier diffusivity and mobility in highly doped Si:As is presented and explained by a simple model. The model…”
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Influence of heavily doped contacts on photoconductive switch properties by Thompson, S.E., Lindholm, F.A.

“…To help analyze a photoconductive semiconductor switch where heavily doped regions about the metal electrodes assure low-resistance ohmic contacts, switch…”
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Non-quasi-static models including all injection levels and DC, AC, and transient emitter crowding in bipolar transistors by Wu, B.S., Lindholm, F.A.

“…Two-dimensional equivalent-circuit models for bipolar junction transistors are systematically derived by solving the continuity equations for DC, AC, and…”
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Comments on determination of bandgap narrowing from activation plots by Jong-Sik Park, Neugroschel, A., Lindholm, F.A.

“…We study the temperature dependence of the emitter saturation current for bipolar devices by varying the surface recombination velocity at the emitter surface…”
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Unifying view of transient responses for determining lifetime and surface recombination velocity in silicon diodes and back-surface-field solar cells, with application to experimental short-circuit-current decay by Tae-Won Jung, Lindholm, F.A., Neugroschel, A.

“…Two main results are presented. The first deals with a simple method that determines the minority-carrier lifetime and the effective surface recombination…”
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Comparison and extension of recent one-dimensional bipolar transistor models by Chen, M.-K., Lindholm, F., Wu, B.S.

“…Various nonquasistatic (NQS) improvements of the Gummel-Pooh integral charge-control model are considered for both small-signal and large-signal excitations…”
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Numerical analysis and interpretation of the small-signal minority-carrier transport in bipolar devices by Park, J.-S., Neugroschel, A., Lindholm, F.A.

“…A simple and efficient one-dimensional numerical technique is presented that determines the small-signal minority-carrier transport in the quasineutral regions…”
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Photoconductive switches for AC circuit protection by Triaros, C.P., Carroll, D.P., Lindholm, F.A.

“…The basic suitability of the photoconductive circuit element (PCE) for protective switching applications in AC power transmission and distribution circuits is…”
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Determination of lifetime and surface recombination velocity of p-n junction solar cells and diodes by observing transients by Lindholm, F.A., Liou, J.J., Neugroschel, A., Jung, T.W.

“…The unified view of transient methods for the determination of recombination lifetime τ and back surface recombination velocity S presented here for silicon…”
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A new charge-control model for single- and double-heterojunction bipolar transistors by Parikh, C.D., Lindholm, F.A.

“…A new charge-control relation is derived for heterojunction bipolar transistors. The relation is valid for arbitrary doping density profiles and for all levels…”
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Pictorial derivation of the influence of degeneracy and disorder on nondegenerate minority-carrier concentration and recombination current in heavily doped silicon by Lindholm, F.A., Fossum, J.G.

“…Fermi-Dirac statistics strongly influence minority-carrier recombination in highly doped silicon even though the minority-carrier concentration is…”
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Transient establishment of the Dember field in fast photoconductive circuit elements by Bor-Yuan Hwang, Lindholm, F.A.

“…The time τ eef required to establish the Dember electric field E_{D}(t) following the sudden application or removal of incident light or other radiation is…”
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Analytical solution for two-dimensional current injection from shallow p-n junctions by Pao-Jung Chen, Misiakos, K., Neugroschel, A., Lindholm, F.A.

“…An accurate analytical solution for the two-dimensional minority-carrier current spreading from a forward-biased p-n junction is presented. The structure…”
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Auger recombination in heavily doped shallow-emitter silicon p-n-junction solar cells, diodes, and transistors by Shibib, M.A., Lindholm, F.A., Fossum, J.G.

“…A rigorous analytic evaluation of an emitter model that includes Auger recombination but excludes bandgap narrowing is presented. It is shown that such a model…”
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