Search Results - "Lin, Jia B"

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  1. 1

    Slowly cycling Rho kinase-dependent actomyosin cross-bridge "slippage" explains intrinsic high compliance of detrusor smooth muscle by Neal, Christopher J, Lin, Jia B, Hurley, Tanner, Miner, Amy S, Speich, John E, Klausner, Adam P, Ratz, Paul H

    “…Biological soft tissues are viscoelastic because they display time-independent pseudoelasticity and time-dependent viscosity. However, there is evidence that…”
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    Journal Article
  2. 2

    Preparation and characterization of nanosized nickel oxide by WANG, Chen-Bin, GAU, Guo-Yuan, GAU, Shiue-Jiun, TANG, Chih-Wei, BI, Jia-Lin

    Published in Catalysis letters (01-06-2005)
    “…Nanosized nickel oxide was synthesized by a simple liquid-phase process to obtain the hydroxide precursor and then calcined to form the oxide. The precursor…”
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    Journal Article
  3. 3

    A Hybrid Fourier-wavelet Denoising Method for Infrared Image of Porcelain Sleeve Cable Terminal Using GSM Model for Wavelet Coefficients by Wu, Ju-Zhuo, Lin, Jia-Jun, Gao, Zi-Jian, Lin, Hui-Hong, Li, Qin-Qiang, Zhang, Chen-Chen

    “…In order to remove the white noise of infrared image effectively and improve the accuracy of infrared diagnosis of electrical equipment, a hybrid…”
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    Conference Proceeding
  4. 4

    Removing white noise in partial discharge signal based on wavelet entropy and improved threshold function by Wu, Ju-Zhuo, Lin, Jia-Jun, Gao, Zi-Jian, Lin, Hui-Hong, Li, Qin-Qiang, Zhang, Chen-Chen

    “…Aiming at the shortcomings of traditional hard threshold method and soft threshold method, this paper puts forward a wavelet denoising method based on wavelet…”
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    Conference Proceeding
  5. 5

    Reliability Study of InGaP/GaAs HBT for 28V Operation by Hin-Fai Chau, F., Jia-Fu Lin, B., Yan Chen, Kretschmar, M., Chien-Ping Lee, Nan-lei Larry Wang, Xiaopeng Sun, Wenlong Ma, Xu, S., Hu, P.

    “…This paper reports the device process and reliability aspects of a high voltage InGaP/GaAs HBT technology for 28V operation. The key differences and challenges…”
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    Conference Proceeding
  6. 6

    Anomalies in MODFET's with a low-temperature buffer by Lin, B.J.-F., Kocot, C.P., Mars, D.E., Jaeger, R.

    Published in IEEE transactions on electron devices (01-01-1990)
    “…GaAs buffer layers grown by molecular-beam epitaxy (MBE) at low temperatures (200-300 degrees C) have been successfully used to reduce sidegating in both…”
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    Journal Article