Search Results - "Lin, Dennis H C"

Tunneling Transistors Based on MoS2/MoTe2 Van der Waals Heterostructures by Balaji, Yashwanth, Mocuta, Dan, Groeseneken, Guido, Smets, Quentin, De La Rosa, Cesar Javier Lockhart, Lu, Anh Khoa Augustin, Chiappe, Daniele, Agarwal, Tarun, Lin, Dennis H. C., Huyghebaert, Cedric, Radu, Iuliana

“…2-D transition metal dichalcogenides (TMDs) are promising materials for CMOS application due to their ultrathin channel with excellent electrostatic control…”
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Direct Assessment of Defective Regions in Monolayer MoS 2 Field-Effect Transistors through In Situ Scanning Probe Microscopy Measurements by Minj, Albert, Mootheri, Vivek, Banerjee, Sreetama, Nalin Mehta, Ankit, Serron, Jill, Hantschel, Thomas, Asselberghs, Inge, Goux, Ludovic, Kar, Gouri Sankar, Heyns, Marc, Lin, Dennis H C

“…Implementing two-dimensional materials in field-effect transistors (FETs) offers the opportunity to continue the scaling trend in the complementary…”
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Direct Assessment of Defective Regions in Monolayer MoS2 Field-Effect Transistors through In Situ Scanning Probe Microscopy Measurements by Minj, Albert, Mootheri, Vivek, Banerjee, Sreetama, Nalin Mehta, Ankit, Serron, Jill, Hantschel, Thomas, Asselberghs, Inge, Goux, Ludovic, Kar, Gouri Sankar, Heyns, Marc, Lin, Dennis H. C.

“…Implementing two-dimensional materials in field-effect transistors (FETs) offers the opportunity to continue the scaling trend in the complementary…”
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FETs on 2-D Materials: Deconvolution of the Channel and Contact Characteristics by Four-Terminal Resistance Measurements on WSe2 Transistors by Sutar, Surajit, Asselberghs, Inge, Lin, Dennis H. C., Thean, Aaron Voon-Yew, Radu, Iuliana

“…FETs made on 2-D semiconductors, typically without degenerate doping at the contacts, have a significant Schottky junction (SJ) resistance, which complicates…”
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Amorphous Gadolinium Aluminate as a Dielectric and Sulfur for Indium Phosphide Passivation by van Dorp, Dennis H, Nyns, Laura, Cuypers, Daniel, Ivanov, Tsvetan, Brizzi, Simone, Tallarida, Massimo, Fleischmann, Claudia, Hönicke, Philipp, Müller, Matthias, Richard, Olivier, Schmeißer, Dieter, De Gendt, Stefan, Lin, Dennis H. C, Adelmann, Christoph

“…The passivation of n-type InP (100) using sulfur in combination with a gadolinium aluminate (GAO) dielectric layer has been studied. Photoluminescence,…”
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FETs on 2-D Materials: Deconvolution of the Channel and Contact Characteristics by Four-Terminal Resistance Measurements on WSe 2 Transistors by Sutar, Surajit, Asselberghs, Inge, Lin, Dennis H. C., Thean, Aaron Voon-Yew, Radu, Iuliana

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Tunneling Transistors Based on MoS 2 /MoTe 2 Van der Waals Heterostructures by Balaji, Yashwanth, Mocuta, Dan, Groeseneken, Guido, Smets, Quentin, De La Rosa, Cesar Javier Lockhart, Lu, Anh Khoa Augustin, Chiappe, Daniele, Agarwal, Tarun, Lin, Dennis H. C., Huyghebaert, Cedric, Radu, Iuliana

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