Search Results - "Lin, B.J.F."

Dramatic reduction of sidegating in MODFETs by Lin, B.J.F., Mars, D.E., Low, T.S.

“…The results of systematic materials and process modifications to implant-isolated MODFETs, aimed at the elimination of sidegating in MODFET ICs, are reported…”
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Subthreshold current in MODFETs of tenth-micrometer gate by Jiang, C., Tsui, D.C., Lin, B.J.F., Lee, H., Lepore, A., Levy, M.

“…The subthreshold current of conventional GaAs/AlGaAs MODFETs and pseudomorphic InGaAs/AlGaAs MODFETs with the gate length down to 0.12 mu m is investigated…”
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Anomalous nanosecond transient component in a GaAs MODFET technology by Kaneshiro, R.T., Kocot, C.P., Jaeger, R.P., Kofol, J.S., Lin, B.J.F., Littau, E., Luechinger, H., Rohdin, H.G.

“…Modulation-doped field-effect transistors (MODFETs) exhibit transient responses that contain a variety of time constants. The strongest transients observed in…”
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A backside via process for thermal resistance improvement demonstrated using GaAs HBTs by Kofol, J.S., Lin, B.J.F., Mierzwinski, M., Kim, A., Armstrong, A., Van Tuyl, R.

“…The authors report a method for reducing the operating temperatures of GaAs-AlGaAs heterojunction bipolar transistors (HBTs) to acceptable levels, while…”
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A 1- mu m MODFET process yielding MUX and DMUX circuits operating at 4.5 Gb/s by Lin, B.J.F., Luechinger, H., Kocot, C.P., Littau, E., Stout, C., McFarland, B., Rohdin, H., Kofol, J.S., Jaeger, R.P., Mars, D.E.

“…The authors report a high-yield 1- mu m enhancement- and depletion-mode MODFET (E/D MODFET) process capable of producing medium-scale integrated circuits…”
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