Bandgap Restructuring of the Layered Semiconductor Gallium Telluride in Air

Bandgap Restructuring of the Layered Semiconductor Gallium Telluride in Air

A giant bandgap reduction in layered GaTe is demonstrated. Chemisorption of oxygen to the Te‐terminated surfaces produces significant restructuring of the conduction band resulting in a bandgap below 0.8 eV, compared to 1.65 eV for pristine GaTe. Localized partial recovery of the pristine gap is ach...

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Bibliographic Details
Published in:Advanced materials (Weinheim) Vol. 28; no. 30; pp. 6465 - 6470
Main Authors: Fonseca, Jose J., Tongay, Sefaattin, Topsakal, Mehmet, Chew, Annabel R., Lin, Alan J., Ko, Changhyun, Luce, Alexander V., Salleo, Alberto, Wu, Junqiao, Dubon, Oscar D.
Format: Journal Article
Language:English
Published: Germany Blackwell Publishing Ltd 01-08-2016
Wiley Blackwell (John Wiley & Sons)
Subjects:
Accessibility
band structure modification
Chemisorption
Company structure
Energy gaps (solid state)
Gallium
gallium telluride
Gates
layered semiconductors
oxygen chemisorption
Semiconductors
Surface chemistry
layered semiconductors
gallium telluride
oxygen chemisorption
band structure modification
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Summary:A giant bandgap reduction in layered GaTe is demonstrated. Chemisorption of oxygen to the Te‐terminated surfaces produces significant restructuring of the conduction band resulting in a bandgap below 0.8 eV, compared to 1.65 eV for pristine GaTe. Localized partial recovery of the pristine gap is achieved by thermal annealing, demonstrating that reversible band engineering in layered semiconductors is accessible through their surfaces.
Bibliography:ark:/67375/WNG-82WF6KCK-S
National Science Foundation Graduate Research Fellowships Program - No. DGE-1106400
Director, Office of Science, Office of Basic Energy Sciences, and Materials Sciences and Engineering Division of the U.S. Department of Energy - No. DE-AC02-05CH11231
istex:AF01F5B4D14843462515D19A4489A7936566E261
ArticleID:ADMA201601151
Present address: Department of Materials Science and Engineering, Arizona State University, Tempe, Arizona 85287, USA
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
DE‐AC02‐05CH11231
USDOE
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.201601151