Search Results - "Lime, Francois"

Unified Charge Control Model for Back-Gated 2-D Field Effect Transistors by Mounir, Ahmed, Iniguez, Benjamin, Lime, Francois, Kloes, Alexander, Knobloch, Theresia, Grasser, Tibor

“…A physics-based analytical dc compact model for single back-gated MoS2 field effect transistors (FETs) is presented. The model is developed by calculating the…”
Get full text

Compact I-V model for back-gated and double-gated TMD FETs by Mounir, Ahmed, Iñiguez, Benjamin, Lime, François, Kloes, Alexander, Knobloch, Theresia, Grasser, Tibor

“…•A physics-based analytical DC compact model for double and single gate TMD FETs is presented.•The charge density inside the 2D layer is expressed in terms of…”
Get full text

A Complete Charge-Based Capacitance Model for IGZO TFTs by Moldovan, Oana, Castro-Carranza, Alejandra, Estrada, Magali, Cerdeira, Antonio, Lime, Francois, Iniguez, Benjamin

“…We present a new complete capacitance model for the amorphous indium-gallium-zinc-oxide (IGZO) thin-film-transistor (TFT), valid in the above-threshold and…”
Get full text

A simple compact model for long-channel junctionless Double Gate MOSFETs by Lime, François, Santana, Ernesto, Iñiguez, Benjamin

“…► We developed an analytical compact model for the drain current of long channel junctionless Double Gate MOSFETs. ► The model is much simpler and covers…”
Get full text

Analytical modeling of capacitances in tunnel-FETs including the effect of Schottky barrier contacts by Farokhnejad, Atieh, Schwarz, Mike, Horst, Fabian, Iñíguez, Benjamín, Lime, François, Kloes, Alexander

“…In this paper, a charge-based analytical model for intrinsic capacitances in tunnel field-effect transistors (TFETs) is presented. The model is derived for a…”
Get full text

A compact explicit DC model for short channel Gate-All-Around junctionless MOSFETs by Lime, François, Ávila-Herrera, Fernando, Cerdeira, Antonio, Iñiguez, Benjamín

“…•A DC compact model for the cylindrical GAA MOSFET is proposed.•Short channel effects are taken into accounted.•The model is explicit with relatively simple…”
Get full text

A quantum wave based compact modeling approach for the current in ultra-short DG MOSFETs suitable for rapid multi-scale simulations by Hosenfeld, Fabian, Horst, Fabian, Iñíguez, Benjamín, Lime, François, Kloes, Alexander

“…•The presented model is based on an non-iterative NEGF formalism.•Channel length from 6nm to 30nm of DG MOSFETs are considered.•Source-to-drain tunneling and…”
Get full text

A Quasi-Two-Dimensional Compact Drain-Current Model for Undoped Symmetric Double-Gate MOSFETs Including Short-Channel Effects by Lime, F., Iniguez, B., Moldovan, O.

“…A drain-current model for undoped symmetric double-gate MOSFETs is proposed. Channel-length modulation and drain-induced barrier lowering are modeled by using…”
Get full text

3D analytical modelling of subthreshold characteristics in vertical Multiple-gate FinFET transistors by Ritzenthaler, Romain, Lime, François, Faynot, Olivier, Cristoloveanu, Sorin, Iñiguez, Benjamin

“…In this work, a model is developed in order to obtain analytical expressions of the subthreshold characteristics of advanced Pi-gate FET transistors. Based on…”
Get full text

Gate leakage current partitioning in nanoscale double gate MOSFETs, using compact analytical model by Darbandy, Ghader, Lime, François, Cerdeira, Antonio, Estrada, Magali, Garduño, Salvador Ivan, Iñiguez, Benjamin

“…► We presented a model of the gate current partitioning into the source and drain for a DG MOSFETs structure. ► Model based on a compact analytical gate…”
Get full text

Analytical modeling of the gate tunneling leakage for the determination of adequate high-k dielectrics in double-gate SOI MOSFETs at the 22nm node by Darbandy, Ghader, Ritzenthaler, Romain, Lime, Francois, Garduño, Ivan, Estrada, Magali, Cerdeira, Antonio, Iñiguez, Benjamin

Get full text

A complete and Verilog-A compatible Gate-All-Around long-channel junctionless MOSFET model implemented in CMOS inverters by Moldovan, Oana, Lime, François, Iñiguez, Benjamin

“…In this paper, we present the results of the implementation of a complete DC and AC Gate-All-Around (GAA) long-channel junctionless MOSFET model in Verilog-A…”
Get full text

Cryogenic Temperature and Doping Analysis of Source-to-Drain Tunneling Current in Ultrashort-Channel Nanosheet MOSFETs by Yilmaz, Kerim, Iniguez, Benjamin, Lime, Francois, Kloes, Alexander

“…This work analyzes the impact of doping concentration on the temperature-dependent subthreshold current and swing saturation due to direct source-to-drain…”
Get full text

Quasi-Compact Model of Direct Source-to-Drain Tunneling Current in Ultrashort-Channel Nanosheet MOSFETs by Wavelet Transform by Yilmaz, Kerim, Iniguez, Benjamin, Lime, Francois, Kloes, Alexander

“…We present an analytical approach for the calculation of direct source-to-drain tunneling (DSDT) probability of electrons in gate-all-around (GAA) silicon…”
Get full text

A Compact Explicit Model for Long-Channel Gate-All-Around Junctionless MOSFETs. Part I: DC Characteristics by Lime, Francois, Moldovan, Oana, Iniguez, Benjamin

“…In this paper, we solved Poisson equation in cylindrical coordinates using approximations to obtain a compact model for the drain current of long-channel…”
Get full text

Compact DC and Quasi-Static Capacitances Modeling of a-Si:H TFTs, Including Parasitic Capacitances by Lime, Francois, Cerdeira, Antonio, Estrada, Magali, Pashkovich, Andrei, Iniguez, Benjamin

“…This article presents a compact model for the drain current and capacitances of hydrogenated amorphous silicon (a-Si:H) thin-film transistors (TFTs). The model…”
Get full text

Electrical studies of semiconductor–dielectric interfaces by Jamal Deen, M., Iñiguez, Benjamin, Marinov, Ognian, Lime, François

“…Issue Title: Oxides in Electronics, Dedicated to Cyril Hogarth In this paper, a review of the physical properties and characterization techniques of…”
Get full text

Impact of On-Current on the Static and Dynamic Performance of TFET Inverters by Farokhnejad, Atieh, Horst, Fabian, Kloes, Alexander, Iniguez, Benjamin, Lime, Francois

“…Concerning the innovations in architecture of tunnel-field effect transistor (TFET), the potential to achieve higher on-current increases. In respect thereof,…”
Get full text

A Compact Explicit Model for Long-Channel Gate-All-Around Junctionless MOSFETs. Part II: Total Charges and Intrinsic Capacitance Characteristics by Moldovan, Oana, Lime, Francois, Iniguez, Benjamin

“…Analytical and explicit expressions are derived for intrinsic capacitances of the junctionless gate-all-around transistor, from the charge-control model, valid…”
Get full text

Equivalent DG Dimensions Concept for Compact Modeling of Short-Channel and Thin Body GAA MOSFETs Including Quantum Confinement by Yilmaz, Kerim, Darbandy, Ghader, Reimbold, Gilles, Iniguez, Benjamin, Lime, Francois, Kloes, Alexander

“…In this work, short-channel effects (SCEs) in cylindrical gate-all-around (GAA) MOSFETs with intrinsic or lightly doped channels are analytically described by…”
Get full text