MAGIC-Memristor-Aided Logic

MAGIC-Memristor-Aided Logic

Memristors are passive components with a varying resistance that depends on the previous voltage applied across the device. While memristors are naturally used as memory, memristors can also be used for other applications, including logic circuits. In this brief, a memristor-only logic family, i.e.,...

Full description

Saved in:
Bibliographic Details
Published in:IEEE transactions on circuits and systems. II, Express briefs Vol. 61; no. 11; pp. 895 - 899
Main Authors: Kvatinsky, Shahar, Belousov, Dmitry, Liman, Slavik, Satat, Guy, Wald, Nimrod, Friedman, Eby G., Kolodny, Avinoam, Weiser, Uri C.
Format: Journal Article
Language:English
Published: New York IEEE 01-11-2014
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects:
Arrays
Electric potential
Gates
Logic
Logic gates
Memory devices
Memristors
Passive components
Random access memory
Resistance
Resistors
Threshold voltage
Voltage
stateful logic
IMPLY
memristor-aided logic (MAGIC)
in-memory computing
memristive systems
memristor
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Memristors are passive components with a varying resistance that depends on the previous voltage applied across the device. While memristors are naturally used as memory, memristors can also be used for other applications, including logic circuits. In this brief, a memristor-only logic family, i.e., memristor-aided logic (MAGIC), is presented. In each MAGIC logic gate, memristors serve as an input with previously stored data, and an additional memristor serves as an output. The topology of a MAGIC nor gate is similar to the structure of a common memristor-based crossbar memory array. A MAGIC nor gate can therefore be placed within memory, providing opportunities for novel non-von Neumann computer architectures. Other MAGIC gates also exist (e.g., and, or, not, and nand) and are described in this brief.
Bibliography:ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:1549-7747
1558-3791
DOI:10.1109/TCSII.2014.2357292