Search Results - "Lima, L.P.B."

Titanium nitride as electrode for MOS technology and Schottky diode: Alternative extraction method of titanium nitride work function by Lima, L.P.B., Diniz, J.A., Doi, I., Godoy Fo, J.

“…Titanium nitride (TiN) films have been used as gate electrodes in metal–oxide-semiconductor (MOS) capacitors, which were fabricated with SiO2 layer as gate…”
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Monolithic Complementary Field Effect Transistors (CFET) Demonstrated using Middle Dielectric Isolation and Stacked Contacts by Demuynck, S., Gonzalez, V. Vega, de Carvalho Cavalcante, C. Toledo, Lima, L.P.B., Stiers, K., Sheng, C., Vandooren, A., Hosseini, M., Zhou, X., Mertens, H., Chiarella, T., Bommels, J., Loo, R., Rosseel, E., Porret, C., Shimura, Y., Akula, A., Mannaert, G., Choudhury, S., Brissonneau, V., Dupuy, E., Sarkar, T., Vergel, N. Franchina, Peter, A., Jourdan, N., Soulie, J.P., Vandersmissen, K., Sebaai, F., Gowda, P. Puttarame, Lai, K., Mingardi, A., Sarkar, S. Sumar, Dhave, K., Chan, B. T., Marquez, A. Sepulveda, Langer, R., Koo, I. Gyo, Sanchez, E. Altamirano, Devriendt, K., Delgadillo, P. Rincon, Lazzarino, F., Mitard, J., Geypen, J., Grieten, E., Batuk, D., Chen, Y-F., Verbeek, F., Holsteyns, F., Subramanian, S., Horiguchi, N., Biesemans, S.

“…This work reports on the first demonstration of monolithic CFET CMOS co-integrating Middle Dielectric Isolation (MDI), Inner Spacers (ISP) and Stacked…”
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TiN/titanium–aluminum oxynitride/Si as new gate structure for 3D MOS technology by Miyoshi, J., Lima, L.P.B., Diniz, J.A., Cavarsan, F.A., Doi, I., Godoy Filho, J., Silva, A.R.

“…3D MOS capacitors with Al/TAON/Si (as control sample) and TiN/TAON/Si gate structures for 3D technology were fabricated. Focus Ion Beam (FIB) thinning process:…”
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