Search Results - "Lim, Kyoung Moon"

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  1. 1

    Method for Providing Electrovibration with Uniform Intensity by Kim, Heewon, Kang, Jeonggoo, Kim, Ki-Duk, Lim, Kyoung-Moon, Ryu, Jeha

    Published in IEEE transactions on haptics (01-10-2015)
    “…Electrovibration is a type of surface haptics that can modulate lateral forces acting between a fingertip and a touch surface. Electrovibration is fast,…”
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    Journal Article
  2. 2

    Two-dimensional modeling of optical transmission on the surface of a lenticular array for autostereoscopic displays by Jung, Sung-Min, Lee, Seung-Chul, Lim, Kyoung-Moon

    Published in Current applied physics (01-09-2013)
    “…In this study, we suggest a customized model describing optical phenomena at the surface of a lenticular array for autostereoscopic displays in a mathematical…”
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  3. 3

    A Novel Five-Photomask Low-Temperature Polycrystalline Silicon CMOS Structure for AMLCD Application by LEE, Sang-Jin, LEE, Seok-Woo, OH, Kum-Mi, PARK, Soo-Jeong, LEE, Kyung-Eon, YOO, Yong-Su, LIM, Kyoung-Moon, YANG, Myoung-Su, YANG, Yong-Suk, HWANG, Yong-Kee

    Published in IEEE transactions on electron devices (01-09-2010)
    “…A novel five-mask low-temperature polycrystalline silicon (LTPS) CMOS structure was verified by manufacturing the thin-film transistor test samples using the…”
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  4. 4

    Haze‐Suppressed Transparent Electrodes Using IZO/Ag/IZO Nanomesh for Highly Flexible and Efficient Blue Organic Light‐Emitting Diodes by Lee, Ho Jin, Kim, Bo‐Hyun, Takaloo, Ashkan Vakilipour, Son, Kyung Rock, Dongale, Tukaram D., Lim, Kyoung Moon, Kim, Tae Geun

    Published in Advanced optical materials (01-08-2021)
    “…Nano‐mesh (NM) structures have been employed as flexible and stretchable electrodes for organic light‐emitting diodes (OLEDs). However, high optical haze…”
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  5. 5

    A Novel Five-Photo-Mask Low-Temperature Polycrystalline-Silicon CMOS Structure With Improved Contact Resistance by Lee, Seok-Woo, Park, Soo-Jeong, Kim, Sung Ki, Baek, Myoung Kee, Lim, Kyoung Moon, Park, Yong In, Kim, Chang-Dong, Kang, In Byeong

    Published in IEEE electron device letters (01-01-2009)
    “…In this letter, a novel five-mask low-temperature polycrystalline-silicon (LTPS) complementary metal-oxide-semiconductor (CMOS) structure was proposed to…”
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  6. 6

    Improved reliability of low-temperature polysilicon TFT by post-annealing gate oxide by Lee, Seok-Woo, Kim, Eugene, Han, Sang-Soo, Lee, Hye Sun, Yun, Duk-Chul, Lim, Kyoung Moon, Yang, Myoung-Su, Kim, Chang-Dong

    Published in IEEE electron device letters (01-03-2003)
    “…We have investigated the electrical characteristics of gate oxide films deposited by plasma enhanced chemical vapor deposition (PECVD) with respect to gate…”
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  7. 7

    P-74: View-Map Redesign Method for Optical Error Compensation By 3D Panel by Park, Myung-Soo, Kim, Hye-Jin, Chin, Kyoung-Ah, Kim, Kil-Tae, Park, Joon-Ha, Lim, Kyoung-Moon

    “…In this paper, we introduce a method to correct a lenticular lens misalignment on an image panel for lenticular lens based multiview displays. The method is…”
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  8. 8

    48.3: Viewer's Eye Position Estimation using Single Camera by Ju, Seong-Hwan, Kim, Myeong-Do, Park, Myung-Soo, Kim, Kil-Tae, Park, Joon-Ha, Lim, Kyoung-Moon

    “…In this paper, we propose a system that can estimate viewer's eye position using single camera in an autostereoscopic 3D display, which adopts Active…”
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  9. 9

    P-143L: Late-News Poster: New Characterization of 3D Performance for Multi-view Autostereoscopic Displays by Jung, Sung-Min, Lee, Keong-Jin, Jang, Jin-Hyuk, Kang, Ji-Na, Lee, Yong-Ku, Lee, Seung-Chul, Lim, Kyoung-Moon, Hwang, Yong-Kee

    “…In this study, we presented new concepts defining 3D crosstalk and 3D blur for autostereoscopic displays for multi‐view autostereoscopic displays. First, we…”
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  10. 10

    P-10: Reliability Improvement of High-Temperature SOR Driving Using Advanced Dual-Gate TFT Application by Hwang, Kwang Jo, Yun, Mi-ra, Kim, Hoon-Ki, Park, Han-chul, Heo, Tae-Young, Kim, Seok, Kim, Eui-tae, Jin, Yoo-yong, Jeong, Woo-Nam, Lim, Kyoung-Moon, Hwang, Yong-Kee

    “…We implemented a novel i‐PR (in‐cell Black Stripe Patterned Retarder) pixel structure by using a simple driving scheme. This approach improves the 2D aperture…”
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  11. 11

    A 3.5 in. QVGA poly-Si TFT-LCD with integrated driver including new 6-bit DAC by Lim, Kyoung Moon, Lee, KyungEon, Yoo, Juhn S., Yoon, Jin-Mo, Baek, Myoung Kee, Yoo, Jae-Sung, Jung, Young-Sik, Park, JoonKyu, Lee, Seok-Woo, Kang, HoChul, Kim, Chang-Dong, Chung, In-Jae

    Published in Solid-state electronics (01-07-2005)
    “…By the SOP (system-on-panel) technology with laser crystallization process, all the driver circuits required for 6-bit color QVGA (320 × RGB × 240) LCD are…”
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  12. 12

    A high resolution Poly-Si TFT–LCD employing analog sample and hold driver by Lim, Kyoung Moon, Lee, KyungEon, Baek, Myoung Kee, Lee, Bu Yeol, Song, In-Hyuk, Yu, Jae-Sung, Lee, Hye-Jin, Jang, Kwang Ho, Park, Yong-In, Yoo, Yong Su, Kang, HoChul, Kim, Chang-Dong, Lee, Deuk Su, Kang, In-Byung

    Published in Displays (01-12-2008)
    “…In this study, we have developed high performance TFT (thin film transistor) and a 7.4-inch high resolution LCD (liquid crystal display) panel of full color…”
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  13. 13

    A 6.94-in. WVGA poly-Si TFT-LCD with integrated driver including sequential analog sampling circuits by Lim, Kyoung Moon, Lee, KyungEon, Baek, Myoung Kee, Lee, Bu Yeol, Yoon, Jin-Mo, Kim, Eugene, Yu, Jae-Sung, Park, Yong-In, Yoo, Yong Su, Kim, Young-Joo, Kang, HoChul, Kim, Chang-Dong, Chung, In-Jae

    Published in Displays (01-11-2006)
    “…By the integrated drive circuitry with laser crystallization process, the gate and data driver circuits required for full color WVGA(800 × RGB × 480) LCD are…”
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  14. 14

    7.2: Realization of 6Mask LTPS CMOS Panel for AMLCD Application by Park, Soo-Jeong, Lee, Seok-Woo, Kim, Young-Joo, Baek, Myoung Kee, Yoo, Yong Su, Lim, Kyoung Moon, Kim, Chang Yeon, Kim, Chang-Dong, Chung, In-Jae

    “…6Mask CMOS process in low temperature polycrystalline silicon thin film transistors (poly‐Si TFTs) has been developed and verified by manufacturing a 6Mask…”
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  15. 15

    P-2: A Novel Structure of AMLCD Panel Using Poly-Si CMOS TFT by Yang, J. Y., Kim, Sang-Hyun, Park, Yong-In, Lim, Kyoung-Moon, Kim, Chang-Dong

    “…In the fabrication of CMOS AMLCD panel, there has been much effort to reduce the number of mask steps in order to achieve the simpler process as well as the…”
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  16. 16

    Haze‐Suppressed Transparent Electrodes Using IZO/Ag/IZO Nanomesh for Highly Flexible and Efficient Blue Organic Light‐Emitting Diodes (Advanced Optical Materials 15/2021) by Lee, Ho Jin, Kim, Bo‐Hyun, Takaloo, Ashkan Vakilipour, Son, Kyung Rock, Dongale, Tukaram D., Lim, Kyoung Moon, Kim, Tae Geun

    Published in Advanced optical materials (04-08-2021)
    “…The cover image shows a blue flexible organic light‐emitting diode using a smart anti‐reflective indium zinc oxide (IZO)/Ag/IZO nanomesh electrode as an anode…”
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  17. 17

    P-2: 3.5 inch QVGA Low-Temperature Poly-Si TFT LCD with Integrated Driver Circuits by Han, Sang-Soo, Lim, Kyoung-Moon, Yoo, Juhn S., Jeong, Young-Sik, Lee, Kyoung-Eon, Park, JoonKyu, Nam, Dae Hyun, Lee, Seok-Woo, Yoon, Jin-Mo, Jung, Yun-Ho, Seo, Hyun Sik, Kim, Chang-Dong

    “…Using the low temperature poly‐Si technology, the 3.5‐inch diagonal QVGA320* RGB*240 TFT‐LCD with integrated circuits was developed for handheld applications…”
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  18. 18
  19. 19

    P-168: LTPS PMOS Four-Mask Process for AMLCDs by Park, Yong In, Lee, Dae Yoon, Yoo, Juhn S., Kang, HoChul, Lim, Kyoung Moon, Kim, Chang-Dong, Chung, In-Jae

    “…Simple p‐channel poly‐Si TFT (Thin Film Transistor) structure (PMOS 4mask structure) for AMLCD (active matrix liquid crystal display) was developed. Compared…”
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  20. 20

    P-3: Analysis of Poly-Si TFTs' Degradation Behavior Induced by DC Stress by Lee, Seok-Woo, Kang, HoChul, Oh, Kum Mi, Kim, Eugene, Park, Soo-Jeong, Lim, Kyoung Moon, Kim, Chang-Dong, Chung, In-Jae

    “…DC stress induced degradation was compared between LTPS short channel LDD NMOSFETs and PMOSFETs with a dimension of W/L = 3/3 μm/μm by degradation mapping of…”
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