Search Results - "Lim, Junil"
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Improved Properties of the Atomic Layer Deposited Ru Electrode for Dynamic Random-Access Memory Capacitor Using Discrete Feeding Method
Published in ACS applied materials & interfaces (26-05-2021)“…Ruthenium (Ru) thin films deposited via atomic layer deposition (ALD) with a normal sequence and discrete feeding method (DFM) and their performance as a…”
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Enhanced Electrical Properties of an Al-Doped TiO2 Dielectric Film on a TiN Electrode by Adopting an Atomic Layer Deposited Ru Interlayer
Published in ACS applied electronic materials (26-04-2022)“…The physicochemical and electrical properties of Pt/Al-doped TiO2 (ATO)/Ru/TiN capacitors were investigated by adopting an atomic-layer-deposited Ru interlayer…”
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The Contrasting Impacts of the Al2O3 and Y2O3 Insertion Layers on the Crystallization of ZrO2 Films for Dynamic Random Access Memory Capacitors
Published in Advanced electronic materials (01-07-2022)“…This study examines the influences of the Al2O3 and Y2O3 insertion layers (ILs) on the structural and electrical features of ZrO2 thin films for their…”
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Trap Reduction through O3 Post‐Deposition Treatment of Y2O3 Thin Films Grown by Atomic Layer Deposition on Ge Substrates
Published in Advanced electronic materials (01-02-2021)“…For Ge‐based metal‐oxide‐semiconductor field‐effect transistor application, high‐k Y2O3 thin films are deposited on Ge single‐crystal substrate using atomic…”
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Leakage Current Control of SrTiO3 Thin Films through Al Doping at the Interface between Dielectric and Electrode Layers via Atomic Layer Deposition
Published in Physica status solidi. PSS-RRL. Rapid research letters (01-11-2019)“…Al is doped to a SrTiO3 (STO) thin film grown by atomic layer deposition (ALD) to decrease the leakage current. One ALD cycle of Al2O3 is processed either at…”
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The Contrasting Impacts of the Al 2 O 3 and Y 2 O 3 Insertion Layers on the Crystallization of ZrO 2 Films for Dynamic Random Access Memory Capacitors
Published in Advanced electronic materials (01-07-2022)“…Abstract This study examines the influences of the Al 2 O 3 and Y 2 O 3 insertion layers (ILs) on the structural and electrical features of ZrO 2 thin films…”
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The Contrasting Impacts of the Al2O3 and Y2O3 Insertion Layers on the Crystallization of ZrO2 Films for Dynamic Random Access Memory Capacitors (Adv. Electron. Mater. 7/2022)
Published in Advanced electronic materials (01-07-2022)“…Al2O3 and Y2O3 Insertion Layers In article number 2200099, Haengha Seo, Cheol Seong Hwang, and co‐workers demonstrate that inserting a thin Y2O3 layer in the…”
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Trap Reduction through O 3 Post‐Deposition Treatment of Y 2 O 3 Thin Films Grown by Atomic Layer Deposition on Ge Substrates
Published in Advanced electronic materials (01-02-2021)“…Abstract For Ge‐based metal‐oxide‐semiconductor field‐effect transistor application, high‐k Y 2 O 3 thin films are deposited on Ge single‐crystal substrate…”
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Leakage Current Control of SrTiO 3 Thin Films through Al Doping at the Interface between Dielectric and Electrode Layers via Atomic Layer Deposition
Published in Physica status solidi. PSS-RRL. Rapid research letters (01-11-2019)“…Al is doped to a SrTiO 3 (STO) thin film grown by atomic layer deposition (ALD) to decrease the leakage current. One ALD cycle of Al 2 O 3 is processed either…”
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Enhancing the Crystallization and Properties of the SrRuO3 Electrode Film Grown by Atomic-Layer-Deposited SrO and Pulsed-Chemical Vapor-Deposited RuO2 through Al Substitution
Published in ACS applied electronic materials (22-08-2023)“…SrRuO3 (SRO) is a promising electrode material for the next-generation dynamic random access memory (DRAM) capacitor. This study focuses on the properties of…”
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Improving the Properties of SrRuO3 Electrode Films Grown by Atomic Layer-Deposited SrO and Pulsed Chemical Vapor-Deposited RuO2 Using Al2O3 Capping Layers
Published in ACS applied electronic materials (22-08-2023)“…In this study, an Al2O3 capping layer (ACL) was utilized to enhance the surface morphology and electrical properties of SrRuO3 (SRO) electrode films deposited…”
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