Search Results - "Lim, Jong Won"

Bidirectional Soft Switching Push-Pull Resonant Converter Over Wide Range of Battery Voltages by Lim, Jong-Won, Hassan, Jamil, Kim, Minsung

“…This article presents a bidirectional soft-switching push-pull resonant converter that is highly efficient over a wide range of battery voltages. It is derived…”
Get full text

High Step-Up Quasi-Resonant Converter Featuring Minimized Switching Loss Over Wide Input Voltage Range by Hassan, Jamil, Bai, Changkyu, Lim, Jong-Won, Kim, Minsung

“…This article proposes a high step-up quasi-resonant converter that minimizes switching loss over a wide range of input voltages. By employing a bidirectional…”
Get full text

Conserved roles of mouse DUX and human DUX4 in activating cleavage-stage genes and MERVL/HERVL retrotransposons by Hendrickson, Peter G, Doráis, Jessie A, Grow, Edward J, Whiddon, Jennifer L, Lim, Jong-Won, Wike, Candice L, Weaver, Bradley D, Pflueger, Christian, Emery, Benjamin R, Wilcox, Aaron L, Nix, David A, Peterson, C Matthew, Tapscott, Stephen J, Carrell, Douglas T, Cairns, Bradley R

“…Bradley Cairns, Douglas Carrell, Stephen Tapscott and colleagues transcriptionally profile human oocytes and preimplantation embryos and highlight DUX4-family…”
Get full text

Highly Efficient Current-Fed Half-Bridge Resonant Converter for Pulse Power Applications by Hassan, Jamil, Bai, Changkyu, Seok, Hwasoo, Lim, Jong-Won, Ahn, Suk-Ho, Kim, Minsung

“…This article proposes a highly efficient current-fed half-bridge resonant converter over a wide range of the output voltages. By adding a bidirectional switch…”
Get full text

Neurogenin and NeuroD direct transcriptional targets and their regulatory enhancers by Seo, Seongjin, Lim, Jong-Won, Yellajoshyula, Dhananjay, Chang, Li-Wei, Kroll, Kristen L

“…Proneural basic helix–loop–helix proteins are key regulators of neurogenesis but their ‘proneural’ function is not well understood, partly because primary…”
Get full text

NuRD and CAF-1-mediated silencing of the D4Z4 array is modulated by DUX4-induced MBD3L proteins by Campbell, Amy E, Shadle, Sean C, Jagannathan, Sujatha, Lim, Jong-Won, Resnick, Rebecca, Tawil, Rabi, van der Maarel, Silvère M, Tapscott, Stephen J

“…The DUX4 transcription factor is encoded by a retrogene embedded in each unit of the D4Z4 macrosatellite repeat. DUX4 is normally expressed in the…”
Get full text

Human body model electrostatic discharge tester using metal oxide semiconductor‐controlled thyristors by Jung, Dong Yun, Park, Kun Sik, Kim, Sang In, Kwon, Sungkyu, Cho, Doo Hyung, Jang, Hyun Gyu, Won, Jongil, Lim, Jong‐Won

“…Electrostatic discharge (ESD) testing for human body model tests is an essential part of the reliability evaluation of electronic/electrical devices and…”
Get full text

Noise mitigation in 12‐to‐5 V DC‐DC converter using an embedded metal layout strategy by Jung, Dong Yun, Jang, Hyun Gyu, Kwon, Sungkyu, Cho, Doohyung, Park, Kun Sik, Lim, Jong‐Won, Lee, Yong Ha

“…We propose a 12‐to‐5 V DC‐DC converter using a low‐temperature co‐fired ceramic (LTCC)‐based multi‐layer circuit technology. The converter using seven‐layer…”
Get full text

Thermal Analysis and Operational Characteristics of an AlGaN/GaN High Electron Mobility Transistor with Copper-Filled Structures: A Simulation Study by Jang, Kyu-Won, Hwang, In-Tae, Kim, Hyun-Jung, Lee, Sang-Heung, Lim, Jong-Won, Kim, Hyun-Seok

“…In this study, we investigated the operational characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) by applying the copper-filled trench and…”
Get full text

Power module stray inductance extraction: Theoretical and experimental analysis by Jung, Dong Yun, Jang, Hyun Gyu, Cho, Doohyung, Kwon, Sungkyu, Won, Jong Il, Lee, Seong Hyun, Park, Kun Sik, Lim, Jong‐Won, Bae, Joung Hwan, Choi, Yun Hwa

“…We propose a stray inductance extraction method on power modules of the few‐kilovolts/several‐hundred‐amperes class using only low voltages and low currents…”
Get full text

C-Band GaN Dual-Feedback Low-Noise Amplifier MMIC with High-Input Power Robustness by Sung, Ha-Wuk, Han, Seong-Hee, Kim, Seong-Il, Ahn, Ho-Kyun, Lim, Jong-Won, Kim, Dong-Wook

“…In this paper, using the 0.2 μm ETRI GaN HEMT process, we developed a C-band GaN dual-feedback low-noise amplifier MMIC for an RF receiver module that requires…”
Get full text

ZEB1 Imposes a Temporary Stage-Dependent Inhibition of Muscle Gene Expression and Differentiation via CtBP-Mediated Transcriptional Repression by Siles, Laura, Sánchez-Tilló, Ester, Lim, Jong-Won, Darling, Douglas S, Kroll, Kristen L, Postigo, Antonio

“…Article Usage Stats Services MCB Citing Articles Google Scholar PubMed Related Content Social Bookmarking CiteULike Delicious Digg Facebook Google+ Mendeley…”
Get full text

High temperature storage test and its effect on the thermal stability and electrical characteristics of AlGaN/GaN high electron mobility transistors by Lee, Jong-Min, Min, Byoung-Gue, Ju, Cheol-Won, Ahn, Ho-Kyun, Lim, Jong-Won

“…The high temperature storage (HTS) effects on the thermal stability and electrical characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) were…”
Get full text

Power Limiter with PIN Diode Embedded in Cavity to Minimize Parasitic Inductance by Jung, Dong Yun, Park, Kun Sik, Won, Jong Il, Cho, Doohyung, Kwon, Sungkyu, Jang, Hyun Gyu, Lim, Jong-Won

“…This letter introduces a power limiter that limits the input power to protect the receiver when a large power enters the radio frequency receiver. When the…”
Get full text

Effects of DC and AC stress on the VT shift of AlGaN/GaN MIS-HEMTs by Kang, Soo Cheol, Jung, Hyun-Wook, Chang, Sung-Jae, Choi, Ilgyu, Lee, Sang Kyung, Kim, Seung Mo, Lee, Byoung Hun, Ahn, Ho-Kyun, Lim, Jong-Won

“…AlGaN/GaN MIS-HEMTs with adjusted VT were fabricated using a recess gate to investigate the effect on actual operation when the polarity of the gate voltage is…”
Get full text

Fin-Width Effects on Characteristics of InGaAs-Based Independent Double-Gate FinFETs by Sung-Jae Chang, Hong Zhou, Nanbo Gong, Dong-Min Kang, Jong-Won Lim, Mengwei Si, Ye, Peide D., Ma, T. P.

“…We report the characteristics of InGaAs-based independent double-gate FinFETs with Al 2 O 3 /LaAlO 3 as gate dielectric. The device can be operated in three…”
Get full text

Total-Ionizing-Dose Responses of GaN-Based HEMTs With Different Channel Thicknesses and MOSHEMTs With Epitaxial MgCaO as Gate Dielectric by Bhuiyan, Maruf A., Zhou, Hong, Chang, Sung-Jae, Lou, Xiabing, Gong, Xian, Jiang, Rong, Gong, Huiqi, Zhang, En Xia, Won, Chul-Ho, Lim, Jong-Won, Lee, Jung-Hee, Gordon, Roy G., Reed, Robert A., Fleetwood, Daniel M., Ye, Peide, Ma, Tso-Ping

“…The radiation hardness of AlGaN/GaN high-electron-mobility transistors (HEMTs) is found to improve with increasing GaN channel thickness. Epitaxial MgCaO shows…”
Get full text

Ultra-low rate dry etching conditions for fabricating normally-off field effect transistors on AlGaN/GaN heterostructures by Kim, Zin-Sig, Lee, Hyung-Seok, Na, Jeho, Bae, Sung-Bum, Nam, Eunsoo, Lim, Jong-Won

“…Enhancement-mode transistors with uniform turn-on threshold voltage (Vth) can be achieved using low damage and low rate gate recess etching techniques. In this…”
Get full text

Substrate Effects on the Electrical Properties in GaN-Based High Electron Mobility Transistors by Chang, Sung-Jae, Cho, Kyu-Jun, Lee, Sang-Youl, Jeong, Hwan-Hee, Lee, Jae-Hoon, Jung, Hyun-Wook, Bae, Sung-Bum, Choi, Il-Gyu, Kim, Hae-Cheon, Ahn, Ho-Kyun, Lim, Jong-Won

“…We report the electrical characteristics of GaN-based high electron mobility transistors (HEMTs) operated on various substrates/films. For the detailed…”
Get full text

Geminin regulates neuronal differentiation by antagonizing Brg1 activity by Seo, Seongjin, Herr, Anabel, Lim, Jong-Won, Richardson, Genova A, Richardson, Helena, Kroll, Kristen L

“…Precise control of cell proliferation and differentiation is critical for organogenesis. Geminin (Gem) has been proposed to link cell cycle exit and…”
Get full text