Search Results - "Lim, DongHwan"

Development of a lower extremity Exoskeleton Robot with a quasi-anthropomorphic design approach for load carriage by Donghwan Lim, Wansoo Kim, Heedon Lee, Hojun Kim, Kyoosik Shin, Taejoon Park, JiYeong Lee, Changsoo Han

“…This study developed the Hanyang Exoskeleton Assistive Robot (HEXAR)-CR50 aimed at improving muscle strength of the wearer while transporting a load. The…”
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Unique reliability characteristics of fully depleted silicon-on-insulator tunneling FET by Kang, Soo Cheol, Lim, Donghwan, Lim, Sung Kwan, Noh, Jinwoo, Kim, Seung-Mo, Lee, Sang Kyung, Choi, Changhwan, Lee, Byoung Hun

“…This study investigated the unique reliability characteristics of tunneling field effect transistors (TFETs) by comparing the effects of positive bias…”
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Chemical bath deposited ZnS buffer layer for Cu(In,Ga)Se2 thin film solar cell by Hong, Jiyeon, Lim, Donghwan, Eo, Young-Joo, Choi, Changhwan

“…[Display omitted] •Chemical bath deposited ZnS thin films were prepared by ZnSO4, Zn(CH3COO)2, and ZnCl2.•The highest deposition rate is related to stability…”
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Influence of oxygen vacancies in ALD HfO2-x thin films on non-volatile resistive switching phenomena with a Ti/HfO2-x/Pt structure by Sokolov, Andrey Sergeevich, Jeon, Yu-Rim, Kim, Sohyeon, Ku, Boncheol, Lim, Donghwan, Han, Hoonhee, Chae, Myeong Gyoon, Lee, Jaeho, Ha, Beom Gil, Choi, Changhwan

“…[Display omitted] •Oxygen vacancies in ALD HfOx thin film were modulated by varying oxidant pulse time.•Resistive switching behaviors are governed by…”
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Tunneling field effect transistors (TFETs) with 3D fin-shaped channel structure and their electrical characteristics by Lim, Donghwan, Han, Hoonhee, Choi, Changhwan

“…•3D fin-shaped TFET shows higher Ion and lower S.S compared to planar TFET.•Interfacial treatment with chemical oxide lowers Ioff.•3D structure and chemical…”
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Improved performance of gate-last FDSOI tunnel field-effect-transistors (TFETs) with modulating Al2O3 composition in atomic layer deposited HfAlOx gate dielectrics by Lim, Donghwan, Lee, Jae Ho, Choi, Changhwan

“…We have studied the electrical characteristics of both n-type and p-type fully depleted silicon on insulator (FD-SOI) tunnel field-effect transistors (TFETs)…”
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Modeling and Experimental Validation of Cell Morphology in Microcellular-Foamed Polycaprolactone by Lim, Donghwan, Lee, Sanghyun, Jung, Seungho, Kim, Kwanhoon, Hong, Jin, Cha, Sung Woon

“…This study investigates the modeling and experimental validation of cell morphology in microcellular-foamed polycaprolactone (PCL) using supercritical carbon…”
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Comparative study of Al2O3, HfO2, and HfAlOx for improved self‐compliance bipolar resistive switching by Sokolov, Andrey S., Son, Seok Ki, Lim, Donghwan, Han, Hoon Hee, Jeon, Yu‐Rim, Lee, Jae Ho, Choi, Changhwan

“…The comparison of resistive switching (RS) storage in the same device architecture is explored for atomic layer deposition (ALD) Al2O3, HfO2 and HfAlOx‐based…”
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Improved performance of gate-last FDSOI tunnel field-effect-transistors (TFETs) with modulating Al^sub 2^O^sub 3^ composition in atomic layer deposited HfAlO^sub x^ gate dielectrics by Lim, Donghwan, Lee, Jae Ho, Choi, Changhwan

“…We have studied the electrical characteristics of both n-type and p-type fully depleted silicon on insulator (FD-SOI) tunnel field-effect transistors (TFETs)…”
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Monolithic 3D Integration of InGaAs Photodetectors on Si MOSFETs Using Sequential Fabrication Process by Geum, Dae-Myeong, Kim, Seong Kwang, Lee, Subin, Lim, Donghwan, Kim, Hyung-Jun, Choi, Chang Hwan, Kim, Sang-Hyeon

“…We demonstrated the monolithic 3D (M3D) integration of InGaAs photodetectors (PDs) on silicon-on-insulator metal-oxide-semiconductor field-effect transistors…”
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Hot-Carrier Degradation Estimation of a Silicon-on-Insulator Tunneling FET Using Ambipolar Characteristics by Kang, Soo Cheol, Lim, Donghwan, Kang, Seok Jin, Lee, Sang Kyung, Choi, Changhwan, Lee, Dong Seon, Lee, Byoung Hun

“…The unique degradation behavior of a tunneling field-effect transistor (TFET) under hot-carrier injection (HCI) stress has been previously investigated…”
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A versatile smart transformation optics device with auxetic elasto-electromagnetic metamaterials by Shin, Dongheok, Urzhumov, Yaroslav, Lim, Donghwan, Kim, Kyoungsik, Smith, David R.

“…Synergistic integration of electromagnetic (EM) and mechanical properties of metamaterials, a concept known as smart metamaterials, promises new applications…”
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Development of a biocompatible radiotherapy spacer using 3D printing and microcellular foaming process for enhanced prostate cancer treatment by Lim, DongHwan, Yoon, DoKun, Kim, JaeHoo, Sung, KiHoon, Choi, YoungEun, Sheen, HeeSoon, Shin, Han-Back, Cha, Sung Woon

“…In this study, a new active spacer was developed using three-dimensional (3D) printing technology and microcellular foaming process to overcome the limitations…”
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Influence of in-situ NH3 plasma passivation on the electrical characteristics of Ga-face n-GaN MOS capacitor with atomic layer deposited HfO2 by Jung, Woo Suk, Lim, Donghwan, Han, Hoonhee, Sokolov, Andrey Sergeevich, Jeon, Yu-Rim, Choi, Changhwan

“…•In-situ NH3 plasma passivation for Ga-face n-GaN MOS capacitor was done by varying plasma power and exposure time.•Improvement in frequency dispersion, ΔVFB,…”
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Electrical characteristics of ALD La2O3 capping layers using different lanthanum precursors in MOS devices with ALD HfO2, HfSiOx, and HfSiON gate dielectrics by Lim, Donghwan, Jung, Woo Suk, Kim, Young Jin, Choi, Changhwan

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Comparative study of Al 2 O 3 , HfO 2 , and HfAlO x for improved self‐compliance bipolar resistive switching by Sokolov, Andrey S., Son, Seok Ki, Lim, Donghwan, Han, Hoon Hee, Jeon, Yu‐Rim, Lee, Jae Ho, Choi, Changhwan

“…The comparison of resistive switching ( RS ) storage in the same device architecture is explored for atomic layer deposition ( ALD ) Al 2 O 3 , HfO 2 and HfAlO…”
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Electrical characteristics of ALD La sub(2)O sub(3) capping layers using different lanthanum precursors in MOS devices with ALD HfO sub(2), HfSiO sub(x), and HfSiON gate dielectrics by Lim, Donghwan, Jung, Woo Suk, Kim, Young Jin, Choi, Changhwan

“…We have investigated the electrical characteristics - flat band voltage (V sub(FB)) shift, equivalent oxide thickness (EOT) scaling and charge trapping - of…”
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The effects of process temperature on the work function modulation of ALD HfO2 MOS device with plasma enhanced ALD TiN metal gate using TDMAT precursor by Kim, Young Jin, Lim, Donghwan, Han, Hoon Hee, Sergeevich, Andrey Sokolov, Jeon, Yu-Rim, Lee, Jae Ho, Son, Seok Ki, Choi, Changhwan

“…We have investigated the effects of metal gate process temperature on the effective work function (Weff) of MOS devices with all ALD HfO2/TiN gate stack and…”
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Remote plasma atomic layer deposited Al2O3 4H SiC MOS capacitor with remote H2 plasma passivation and post metallization annealing by Heo, Seung Chan, Lim, Donghwan, Jung, Woo Suk, Choi, Rino, Yu, Hyun-Yong, Choi, Changhwan

“…[Display omitted] •ALD Al2O3/4H-SiC MOS device with remote H2 plasma passivation.•Lower Jg, lower hysteresis, higher VBD, and reduced Dit with H2 plasma…”
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Suppressed charge trapping characteristics of (NH^sub 4^)^sub 2^S^sub x^ passivated GaN MOS device with atomic layer deposited HfAlO^sub x^ gate dielectric by Han, Hoon Hee, Lim, Donghwan, Sergeevich, Andrey Sokolov, Jeon, Yu-Rim, Lee, Jae Ho, Son, Seok Ki, Choi, Changhwan

“…The charge trapping behaviors of ammonium poly-sulfide, (NH4)2Sx, passivated GaN MOS device with atomic layer deposited HfAlOx gate dielectric and DC-sputtered…”
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