Search Results - "Lim, D.W."

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    Writing current reduction and total set resistance analysis in PRAM by Jeong, C.W., Kang, D.H., Ha, D.W., Song, Y.J., Oh, J.H., Kong, J.H., Yoo, J.H., Park, J.H., Ryoo, K.C., Lim, D.W., Park, S.S., Kim, J.I., Oh, Y.T., Kim, J.S., Shin, J.M., Park, Jaehyun, Fai, Y., Koh, G.H., Jeong, G.T., Jeong, H.S., Kim, Kinam

    Published in Solid-state electronics (01-04-2008)
    “…We evaluated the limit of scaling bottom electrode contact (BEC) heater size and high resistivity heater to reduce writing current. It was found that the…”
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    Journal Article Conference Proceeding
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    Full Integration of Highly Manufacturable 512Mb PRAM based on 90nm Technology by Oh, J.H., Park, J.H., Lim, Y.S., Lim, H.S., Oh, Y.T., Kim, J.S., Shin, J.M., Song, Y.J., Ryoo, K.C., Lim, D.W., Park, S.S., Kim, J.I., Kim, J.H., Yu, J., Yeung, F., Jeong, C.W., Kong, J.H., Kang, D.H., Koh, G.H., Jeong, G.T., Jeong, H.S., Kinam Kim

    “…Fully functional 512Mb PRAM with 0.047mum 2 (5.8F 2 ) cell size was successfully fabricated using 90nm diode technology in which the authors developed novel…”
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    Conference Proceeding
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