Optical Proximity Correction Methodology to Counteract Mask Error Effects in Sub-0.25 µm Lithography Generations
A new methodology for optical proximity correction design is required for sub-0.25 µm device generation, to predict and counteract mask error effects. We applied a new concept of virtual mask technology to design an optical proximity correction (OPC), which involves adding a small dummy mask pattern...
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| Published in: | Japanese Journal of Applied Physics Vol. 37; no. 12S; p. 6681 |
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| Main Authors: | , , |
| Format: | Journal Article |
| Language: | English |
| Published: |
01-12-1998
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| Online Access: | Get full text |
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| Summary: | A new methodology for optical proximity correction design is required for sub-0.25 µm
device generation, to predict and counteract mask error effects. We applied a new concept
of virtual mask technology to design an optical proximity correction (OPC), which involves adding a small dummy mask
pattern on a simulation mask layout, to realize mask error effect. The aerial image
simulation results for the new methodology suggested a totally different type of OPC.
Experimental results were more accurately predicted by the new methodology than the old
methodology. For 0.25 µm features hammerhead OPC shows much improved results of
intra-field CD uniformity of 20 nm, of 3 sigma, and wide usable process window of 14%
exposure latitude and 0.8 µm depth of focus, compared with serif OPC that was selected
by the old methodology. This new methodology with virtual mask technology will be
applied to sub-0.25 µm generations. |
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| ISSN: | 0021-4922 1347-4065 |
| DOI: | 10.1143/JJAP.37.6681 |