OPC Methodology To Overcome Mask Error Effect On Below 0.25 um Lithography Generation

OPC Methodology To Overcome Mask Error Effect On Below 0.25 um Lithography Generation

In this paper, we try to build up new simulation methodology to obtain the better matching results between simulation and real experimental results.

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Bibliographic Details
Published in:Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135) pp. 64 - 65
Main Authors: Keeho Kim, Madhavan, S., Lilygren, J.
Format: Conference Proceeding
Language:English
Published: IEEE 1998
Subjects:
Character generation
Error correction
Inspection
Leakage current
Lithography
Manufacturing
Predictive models
Research and development
Testing
Writing
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Description
Summary:In this paper, we try to build up new simulation methodology to obtain the better matching results between simulation and real experimental results.
ISBN:9784930813831
4930813832
DOI:10.1109/IMNC.1998.729965