Search Results - "Lill, Thorsten"

Thermal atomic layer etching: A review by Fischer, Andreas, Routzahn, Aaron, George, Steven M., Lill, Thorsten

“…This article reviews the state-of-the art status of thermal atomic layer etching of various materials such as metals, metal oxides, metal nitrides,…”
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Overview of atomic layer etching in the semiconductor industry by Kanarik, Keren J., Lill, Thorsten, Hudson, Eric A., Sriraman, Saravanapriyan, Tan, Samantha, Marks, Jeffrey, Vahedi, Vahid, Gottscho, Richard A.

“…Atomic layer etching (ALE) is a technique for removing thin layers of material using sequential reaction steps that are self-limiting. ALE has been studied in…”
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Thermal etching of AlF3 and thermal atomic layer etching of Al2O3 by Fischer, Andreas, Routzahn, Aaron, Lee, Younghee, Lill, Thorsten, George, Steven M.

“…Thermal etching of AlF3 with dimethyl-aluminum chloride (DMAC) and thermal isotropic atomic layer etching (ALE) of Al2O3 with alternating anhydrous hydrogen…”
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Predicting synergy in atomic layer etching by Kanarik, Keren J., Tan, Samantha, Yang, Wenbing, Kim, Taeseung, Lill, Thorsten, Kabansky, Alexander, Hudson, Eric A., Ohba, Tomihito, Nojiri, Kazuo, Yu, Jengyi, Wise, Rich, Berry, Ivan L., Pan, Yang, Marks, Jeffrey, Gottscho, Richard A.

“…Atomic layer etching (ALE) is a multistep process used today in manufacturing for removing ultrathin layers of material. In this article, the authors report on…”
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Directional etch of magnetic and noble metals. II. Organic chemical vapor etch by Chen, Jack Kun-Chieh, Altieri, Nicholas D., Kim, Taeseung, Chen, Ernest, Lill, Thorsten, Shen, Meihua, Chang, Jane P.

“…Surface oxidation states of transition (Fe and Co) and noble (Pd and Pt) metals were tailored by controlled exposure to O2 plasmas, thereby enabling their…”
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Applying sputtering theory to directional atomic layer etching by Berry, Ivan L., Kanarik, Keren J., Lill, Thorsten, Tan, Samantha, Vahedi, Vahid, Gottscho, Richard A.

“…Plasma assisted atomic layer etching (ALE) has recently been introduced into manufacturing of 10 nm logic devices. This implementation of ALE is called…”
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Directional etch of magnetic and noble metals. I. Role of surface oxidation states by Chen, Jack Kun-Chieh, Altieri, Nicholas D., Kim, Taeseung, Lill, Thorsten, Shen, Meihua, Chang, Jane P.

“…An organic chemical etch process based on tailoring the surface oxidation state was found to be effective in realizing directional etch of magnetic and noble…”
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Ion Beam Patterning of High-Density STT-RAM Devices by Ip, Vincent, Shuogang Huang, Carnevale, Santino D., Berry, Ivan L., Rook, Katrina, Lill, Thorsten B., Paranjpe, Ajit P., Cerio, Frank

“…Dependence on ion beam energy, ion species, and incidence angles is investigated to reduce sidewall re-deposition on the magnetic tunnel junction barrier…”
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SiCl4/Cl2 plasmas: A new chemistry to etch high-k materials selectively to Si-based materials by Bodart, Paul, Cunge, Gilles, Joubert, Olivier, Lill, Thorsten

“…Plasma etching of ultrathin layers of high-k materials is one critical step in the fabrication of gate transistors. The main challenge in this process is to…”
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Neutral transport during etching of high aspect ratio features by Panagopoulos, Theodoros, Lill, Thorsten

“…This paper studies the transport of neutral etch species in cylindrical holes, which are of interest for advanced memory devices. The etching of these devices…”
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Spontaneous Etching of Metal Fluorides Using Ligand-Exchange Reactions: Landscape Revealed by Mass Spectrometry by Lii-Rosales, Ann, Cavanagh, Andrew S, Fischer, Andreas, Lill, Thorsten, George, Steven M

“…Thermal atomic layer etching (ALE) can be performed using sequential reactions based on surface modification followed by volatile release of the modified…”
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Causes of anisotropy in thermal atomic layer etching of nanostructures by Fischer, Andreas, Routzahn, Aaron, Wen, Sandy, Lill, Thorsten

“…In this work, the authors have investigated the dependence of the anisotropy level in an atomic layer etching (ALE) process of Al2O3 on form factor constraints…”
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Effect of surface polymerization on plasma and process stability in polycrystalline-silicon etching by Xu, Songlin, Lill, Thorsten, Deshmukh, Shashank, Joubert, Olivier

“…Properties of the plasma containing Cl 2 , HBr, and O 2 species used for polysilicon etching change when the chamber wall is coated with organic polymer,…”
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Volatile Products from Ligand Addition of P(CH 3 ) 3 to NiCl 2 , PdCl 2 , and PtCl 2 : Pathway for Metal Thermal Atomic Layer Etching by Lii-Rosales, Ann, Johnson, Virginia L., Sharma, Sandeep, Fischer, Andreas, Lill, Thorsten, George, Steven M.

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Surface reaction modelling of thermal atomic layer etching on blanket hafnium oxide and its application on high aspect ratio structures by Fischer, Andreas, Mui, David, Routzahn, Aaron, Gasvoda, Ryan, Sims, Jim, Lill, Thorsten

“…Thermal atomic layer etching is rapidly becoming an important complementary processing technology in the manufacturing of 5 and 3 nm devices in the…”
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Effectiveness of Different Ligands on Silane Precursors for Ligand Exchange to Etch Metal Fluorides by Lii-Rosales, Ann, Johnson, Virginia L., Cavanagh, Andrew S., Fischer, Andreas, Lill, Thorsten, Sharma, Sandeep, George, Steven M.

“…Metal fluorides can be spontaneously etched by ligand-exchange reactions. During these reactions, the exchange of ligands between the incoming precursor and…”
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Control of etch profiles in high aspect ratio holes via precise reactant dosing in thermal atomic layer etching by Fischer, Andreas, Routzahn, Aaron, Gasvoda, Ryan J., Sims, Jim, Lill, Thorsten

“…Thermal atomic layer etching (ALE) was studied in HfO2-based 3D NAND test structures with an aspect ratio of more than 50:1. Etching was performed via ligand…”
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Thermal Atomic Layer Etching of CoO, ZnO, Fe2O3, and NiO by Chlorination and Ligand Addition Using SO2Cl2 and Tetramethylethylenediamine by Partridge, Jonathan L., Murdzek, Jessica A., Johnson, Virginia L., Cavanagh, Andrew S., Fischer, Andreas, Lill, Thorsten, Sharma, Sandeep, George, Steven M.

“…Thermal atomic layer etching (ALE) of CoO, ZnO, Fe2O3, and NiO was achieved using chlorination and ligand-addition reactions at 250 °C. This two-step process…”
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Wall-dependent etching characteristics of organic antireflection coating in O2+halogen/hydrogen halide plasma by Xu, Songlin, Lill, Thorsten, Podlesnik, Dragan

“…Process instability in plasma etching of organic bottom-antireflection coating (BARC) using the plasma of O2 mixed with halogen (Cl2) or hydrogen halide (HBr,…”
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Dry etching in the presence of physisorption of neutrals at lower temperatures by Lill, Thorsten, Berry, Ivan L., Shen, Meihua, Hoang, John, Fischer, Andreas, Panagopoulos, Theo, Chang, Jane P., Vahedi, Vahid

“…In this article, we give an overview about the chemical and physical processes that play a role in etching at lower wafer temperatures. Conventionally, plasma…”
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