Search Results - "Liebscher, Sven C."

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  1. 1

    Intrinsic carrier losses in tellurium due to radiative and Auger recombinations by Hader, Jörg, Liebscher, Sven C., Moloney, Jerome V., Koch, Stephan W.

    Published in Applied physics letters (07-11-2022)
    “…Fully microscopic many-body models based on inputs from first principles density functional theory are used to calculate the carrier losses due to radiative-…”
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    Journal Article
  2. 2

    Extension of the LDA-1/2 method to the material class of bismuth containing III–V semiconductors by Liebscher, Sven C., Bannow, Lars C., Hader, Jörg, Moloney, Jerome V., Koch, Stephan W.

    Published in AIP advances (01-11-2020)
    “…The local density approximation-1/2 method is employed in density functional theory calculations for the electronic structure of III–V dilute bismide systems…”
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    Journal Article
  3. 3

    Intrinsic Carrier Losses in Tellurium Due to Radiative and Auger Recombinations by Hader, Jörg, Liebscher, Sven C, Moloney, Jerome V, Koch, Stephan W

    Published 10-08-2022
    “…Fully microscopic many-body models based on inputs from first principle density functional theory are used to calculate the carrier losses due to radiative-…”
    Get full text
    Journal Article
  4. 4

    Extension of the LDA-1/2 method to the material class of bismuth containing III-V semiconductors by Liebscher, Sven C, Bannow, Lars C, Hader, Jörg, Moloney, Jerome V, Koch, Stephan W

    Published 11-08-2020
    “…The LDA-1/2 method is employed in density functional theory calculations for the electronic structure of III-V dilute bismide systems. For the representative…”
    Get full text
    Journal Article