Search Results - "Liberis, J"

Self-formation of high-field domain in epitaxial ZnO and its suppression in ZnO/MgZnO heterostructure by Šermukšnis, E., Liberis, J., Šimukovič, A., Matulionis, A., Ding, K., Avrutin, V., Özgür, Ü., Morkoç, H.

“…Microwave noise is used to study high-electric-field electronic properties of ZnO channels with electron densities in the range from 1017 to 1019 cm–3. The…”
Get full text

Degradation in InAlN/GaN-based heterostructure field effect transistors: Role of hot phonons by Leach, J. H., Zhu, C. Y., Wu, M., Ni, X., Li, X., Xie, J., Özgür, Ü., Morkoç, H., Liberis, J., Šermukšnis, E., Matulionis, A., Cheng, H., Kurdak, Ç.

“…We report on high electric field stress measurements at room temperature on InAlN/AlN/GaN heterostructure field effect transistor structures. The degradation…”
Get full text

Electron drift velocity in AlGaN/GaN channel at high electric fields by Ardaravičius, L., Matulionis, A., Liberis, J., Kiprijanovic, O., Ramonas, M., Eastman, L. F., Shealy, J. R., Vertiatchikh, A.

“…Current–voltage characteristics of a nominally undoped AlGaN/GaN two-dimensional electron gas channel is measured at a room temperature, and electron drift…”
Get full text

Novel fluctuation-based approach to optimization of frequency performance and degradation of nitride heterostructure field effect transistors by Matulionis, A., Liberis, J., Matulionienė, I., Šermukšnis, E., Leach, J. H., Wu, M., Morkoç, H.

“…The fluctuation‐based technique has been used to shed light onto the physical processes responsible for the performance of nitride heterostructure field effect…”
Get full text

InAlN-barrier HFETs with GaN and InGaN channels by Liberis, J., Matulionienė, I., Matulionis, A., Šermukšnis, E., Xie, J., Leach, J. H., Morkoç, H.

“…Advantages and drawbacks of InN‐containing GaN‐based heterostructure field‐effect transistors (HFETs) are reviewed. The main attention is paid to fundamental…”
Get full text

Window for better reliability of nitride heterostructure field effect transistors by Matulionis, A., Liberis, J., Šermukšnis, E., Ardaravičius, L., Šimukovič, A., Kayis, C., Zhu, C.Y., Ferreyra, R., Avrutin, V., Özgür, Ü., Morkoç, H.

“…Phase-noise technique was applied to monitor channel degradation of nitride heterostructure field effect transistors (HFETs) subjected to a fixed drain voltage…”
Get full text

Hot-electron drift velocity and hot-phonon decay in AlInN/AlN/GaN by Ardaravicˇius, L., Liberis, J., Kiprijanovicˇ, O., Matulionis, A., Wu, M., Morkoç, H.

“…A nanosecond‐pulsed current–voltage technique was applied to study hot‐electron transport along the two‐dimensional electron gas channel confined at a…”
Get full text

High frequency noise of epitaxial graphene grown on sapphire by Ardaravicˇius, L., Liberis, J., Šermukšnis, E., Matulionis, A., Hwang, J., Kwak, J. Y., Campbell, D., Alsalman, H. A., Eastman, L. F., Spencer, M. G.

“…Microwave noise technique is applied to study in‐plane electronic properties of epitaxial graphene grown on sapphire by chemical vapor deposition and subjected…”
Get full text

Hot-electron transport in 4H-SiC by Ardaravičius, L., Matulionis, A., Kiprijanovic, O., Liberis, J., Cha, H.-Y., Eastman, L. F., Spencer, M. G.

“…Nanosecond-pulsed technique is used to study hot-electron transport in donor-doped 4H-SiC ( n = 2 × 10 17 cm − 3 ) biased parallel to the basal plane. The…”
Get full text

Comparative analysis of hot-electron transport in AlGaN/GaN and AlGaN/AlN/GaN 2DEG channels by Ardaravičius, L., Ramonas, M., Kiprijanovic, O., Liberis, J., Matulionis, A., Eastman, L. F., Shealy, J. R., Chen, X., Sun, Y. J.

“…Nanosecond‐pulsed current–voltage measurements were used to study hot‐electron transport in undoped AlGaN/GaN and AlGaN/AlN/GaN two‐dimensional electron gas…”
Get full text

Self-heating and microwave noise in AlGaN/GaN by Ardaravičius, L., Liberis, J., Matulionis, A., Eastman, L. F., Shealy, J. R., Vertiatchikh, A.

“…Equivalent noise temperature and spectral intensity of current fluctuations at 10 GHz frequency are investigated for Al0.15Ga0.85N/GaN channels. Dependence on…”
Get full text

Hot-electron velocity fluctuations in two-dimensional electron gas channels by Matulionis, A., Aninkevičius, V., Liberis, J.

“…A review of experimental results on the hot-electron fluctuations specific to a two-dimensional electron gas confined in a heterostructure channel is given…”
Get full text

Fast and Ultrafast Processes in AlGaN/GaN Channels by Matulionis, A., Liberis, J., Ardaravičius, L., Ramonas, M., Zubkutė, T., Matulionienė, I., Eastman, L.F., Shealy, J.R., Smart, J., Pavlidis, D., Hubbard, S.

“…Extrapolated experimental dependence of electron energy relaxation time is used to treat hot‐electron sharing by the adjacent Al0.15Ga0.85N and GaN layers in…”
Get full text

Hot-electron energy relaxation, noise, and lattice strain in InGaAs quantum well channels by Matulionis, A., Aninkevičius, V., Liberis, J., Matulionienė, I., Berntgen, J., Heime, K., Hartnagel, H. L.

“…Energy loss by hot electrons in lattice-matched and strained InGaAs layers is estimated from experimental data on microwave noise obtained for InP-based…”
Get full text

Experiments on hot electron noise in semiconductor materials for high-speed devices by Bareikis, V., Liberis, J., Matulioniene, I., Matulionis, A., Sakalas, P.

“…Experimental results on noise temperature and spectral density of current fluctuations (electron diffusion) at high electric fields in silicon, gallium…”
Get full text

Noise and electron diffusion in doped n -type GaAs at heating electric fields by Katilius, R., Liberis, J., Matulionis, A., Raguotis, R., Sakalas, P., Nougier, J.-P., Vaissière, J.-C., Varani, L., Rota, L.

Get full text

Competition of shot noise and hot-electron noise in GaAs planar-doped barrier diode by Gružinskis, V., Liberis, J., Matulionis, A., Sakalas, P., Starikov, E., Shiktorov, P., Szentpáli, B., Van Tuyen, V., Hartnagel, H. L.

“…Microwave noise in GaAs planar-doped barrier diodes is investigated over a wide range of bias. Suppression of shot noise at intermediate densities of current…”
Get full text

QW-Shape-Dependent Hot-Electron Velocity Fluctuations in InGaAs-Based Heterostructures by Matulionis, A., Aninkevičius, V., Berntgen, J., Gasquet, D., Liberis, J., Matulionienė, I.

“…Hot‐electron microwave noise was measured for InAlAs/InGaAs/InAlAs/InP quantum well channels containing two‐dimensional electron gas subjected to high electric…”
Get full text

Plasmon-enhanced heat dissipation in GaN-based two-dimensional channels by Matulionis, A., Liberis, J., Matulionienė, I., Ramonas, M., Šermukšnis, E., Leach, J. H., Wu, M., Ni, X., Li, X., Morkoç, H.

“…Decay of nonequilibrium longitudinal optical (LO) phonons is investigated at room temperature in two-dimensional electron gas channels confined in nearly…”
Get full text

Effect of hot phonon lifetime on electron velocity in InAlN/AlN/GaN heterostructure field effect transistors on bulk GaN substrates by Leach, J. H., Zhu, C. Y., Wu, M., Ni, X., Li, X., Xie, J., Özgür, Ü., Morkoç, H., Liberis, J., Šermukšnis, E., Matulionis, A., Paskova, T., Preble, E., Evans, K. R.

“…We report on electron velocities deduced from current gain cutoff frequency measurements on GaN heterostructure field effect transistors (HFETs) with InAlN…”
Get full text