Search Results - "Liao, A. S."

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  1. 1

    WHEN SHOCK WAVES COLLIDE by Hartigan, P., Foster, J., Frank, A., Hansen, E., Yirak, K., Liao, A. S., Graham, P., Wilde, B., Blue, B., Martinez, D., Rosen, P., Farley, D., Paguio, R.

    Published in The Astrophysical journal (01-06-2016)
    “…ABSTRACT Supersonic outflows from objects as varied as stellar jets, massive stars, and novae often exhibit multiple shock waves that overlap one another. When…”
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    Journal Article
  2. 2

    Twofold efficiency improvement in high performance AlGaInP light-emitting diodes in the 555-620 nm spectral region using a thick GaP window layer by HUANG, K. H, YU, J. G, KUO, C. P, FLETCHER, R. M, OSENTOWSKI, T. D, STINSON, L. J, CRAFORD, M. G, LIAO, A. S. H

    Published in Applied physics letters (31-08-1992)
    “…AlGaInP light-emitting diodes (LEDs) with external quantum efficiencies ≥6% and luminous performance of 20 lm/W have been fabricated. These LEDs are twice as…”
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  3. 3

    MBE grown n+-i-δ(p+)-i-n+GaAs V-groove barrier transistor by Chang, C.Y., Wang, Y.H., Liu, W.C., Liao, S.A.

    Published in IEEE electron device letters (01-03-1985)
    “…The three-terminal n + -i-δ(p + )-i-n + V-groove barrier transistor (VBT) has been successfully fabricated by molecular beam epitaxy (MBE). The base terminal…”
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  4. 4

    Beryllium implantation doping of InGaAs by TELL, B, LEHENY, R. F, LIAO, A. S. H, BRIDGES, T. J, BURKHARDT, E. G, CHANG, T. Y, BEEBE, E. D

    Published in Applied physics letters (15-02-1984)
    “…Ion implantation doping of Be acceptors in n-In0.53Ga0.47As is reported. A significant improvement in peak concentration, depth control, and solubility is…”
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  5. 5

    On the surface defects of MBE-grown GaAs layers by WANG, Y. H, LIU, W. C, LIAO, S. A, CHENG, K. Y, CHANG, C. Y

    Published in Japanese Journal of Applied Physics (01-05-1985)
    “…Two kinds of triangular pyramidal shaped defects with bases aligned in the (110) orientation, induced during growth of GaAs MBE layers are described. The…”
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  6. 6

    Molecular beam epitaxially grown circular U-groove barrier transistor by CHANG, C. Y, WANG, Y. H, LIU, W. C, LIAO, S. A, CHENG, K. Y

    Published in Applied physics letters (01-06-1985)
    “…A new version of simple GaAs n+-n-δ(p+)-n-n+ ultrathin base transistor with U-groove base contact is demonstrated by molecular beam epitaxy which possesses a…”
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  7. 7

    When Shock Waves Collide by Hartigan, P, Foster, J, Frank, A, Hansen, E, Yirak, K, Liao, A. S, Graham, P, Wilde, B, Blue, B, Martinez, D, Rosen, P, Farley, D, Paguio, R

    Published 29-03-2016
    “…Supersonic outflows from objects as varied as stellar jets, massive stars and novae often exhibit multiple shock waves that overlap one another. When the…”
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    Journal Article
  8. 8

    WHEN SHOCK WAVES COLLIDE by Hartigan, P., Liao, A. S., Foster, J., Graham, P., Rosen, P., Frank, A., Hansen, E., Yirak, K., Wilde, B., Blue, B., Paguio, R., Martinez, D., Farley, D.

    Published in The Astrophysical journal (01-06-2016)
    “…Supersonic outflows from objects as varied as stellar jets, massive stars, and novae often exhibit multiple shock waves that overlap one another. When the…”
    Get full text
    Journal Article
  9. 9

    When Shock Waves Collide by Hartigan, P., Foster, J., Frank, A., Hansen, E., Yirak, K., Liao, A. S., Graham, P., Wilde, Bernhard Heinz, Blue, B., Martinez, D., Rosen, P., Farley, D., Paguio, R.

    Published in The Astrophysical journal (01-06-2016)
    “…Supersonic outflows from objects as varied as stellar jets, massive stars, and novae often exhibit multiple shock waves that overlap one another. When the…”
    Get full text
    Journal Article
  10. 10
  11. 11

    Surface morphologies of GaAs layers grown by arsenic‐pressure‐controlled molecular beam epitaxy by Wang, Y. H., Liu, W. C., Chang, C. Y., Liao, S. A.

    “…Surface morphologies of the molecular beam epitaxy (MBE)‐grown GaAs layers using background arsenic‐pressure‐control method were investigated. The growth…”
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  12. 12

    Similarity of the oral microbiota of pre-school children with that of their caregivers in a population-based study by Tanner, A. C. R., Milgrom, P. M., Kent Jr, R., Mokeem, S. A., Page, R. C., Liao, S. I. A., Riedy, C. A., Bruss, J. B.

    Published in Oral microbiology and immunology (01-12-2002)
    “…This study evaluated the similarity between the oral microbiota of young children and that of their adult caregivers. Oral samples from children (174 dentate…”
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  13. 13

    Lightning, radar reflectivity, infrared brightness temperature, and surface rainfall during the 2–4 July 2004 severe convective system over Taiwan area by Wang, Kuo-Ying, Liao, Shun-An

    “…On 2–4 July 2004, unusually severe convective systems developed over Taiwan area, following the passage of Typhoon Mindulle (10W, T0407). During the lifetime…”
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  14. 14

    Monolithic integration of a planar embedded InGaAs p-i-n detector with InP depletion-mode FET's by Tell, B., Liao, A.S.H., Brown-Goebeler, K.F., Bridges, T.J., Burkhardt, G., Chang, T.Y., Bergano, N.S.

    Published in IEEE transactions on electron devices (01-01-1985)
    “…We report the operation of a fully integrated p-i-n FET circuit based on a planar embedded In 0.53 Ga 0.47 As p-i-n detector and load resistor with InP…”
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  15. 15

    Submicrometer self-aligned recessed gate InGaAs MISFET exhibiting very high transconductance by Cheng, C.L., Liao, A.S.H., Chang, T.Y., Leheny, R.F., Coldren, L.A., Lalevic, B.

    Published in IEEE electron device letters (01-05-1984)
    “…A new submicrometer InGaAs depletion-mode MISFET with a self-aligned recessed gate structure is presented. The techniques used to implement this FET structure…”
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  16. 16

    Electron transport in In0.53Ga0.47As/plasma oxide inversion layers by LIAO, A. S. H, LEHENY, R. F, CHANG, T. Y, CARIDI, E. A, BEEBE, E, DE WINTER, J. C

    Published in Applied physics letters (01-01-1984)
    “…In this letter we report the first direct measurements of low field transport properties for inversion layer electrons in an InGaAs native oxide…”
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  17. 17

    In0.53Ga0.47As n -channel native oxide inversion mode field-effect transistor by Liao, A. S. H., Tell, B., Leheny, R. F., Chang, T. Y.

    Published in Applied physics letters (01-08-1982)
    “…We describe a native oxide insulated gate, inversion mode In0.53Ga0.47As field-effect transistor. Drain characteristics measured with pulsed gate voltage yield…”
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  18. 18

    Diverse familial malignant tumors and Epstein-Barr virus by Purtilo, D T, Liao, S A, Sakamoto, K, Snyder, L M, DeFlorio, Jr, D, Bhawan, J, Paquin, L, Yang, J P, Hutt-Fletcher, L M, Muralidharan, K, Raffa, P, Saemundsen, A K, Klein, G

    Published in Cancer research (Chicago, Ill.) (01-11-1981)
    “…Continued monitoring of a family for new malignant tumors has revealed diverse immunological and neoplastic disorders during a 15-year period. In 1966, the…”
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  19. 19

    Monolithic integration of a vertical cavity surface emitting laser and a metal semiconductor field effect transistor by YANG, Y. J, DZIURA, T. G, BARDIN, T, WANG, S. C, FERNANDEZ, R, LIAO, A. S. H

    Published in Applied physics letters (08-02-1993)
    “…Monolithic integration of a vertical cavity surface emitting laser (VCSEL) and a metal semiconductor field effect transistor (MESFET) is reported for the first…”
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  20. 20

    Nanoscale surface modification favors benign biofilm formation and impedes adherence by pathogens by Trautner, Barbara W., MD, PhD, Lopez, Analette I., PhD, Kumar, Amit, PhD, Siddiq, Danish M., MD, Liao, Kershena S., BA, Li, Yan, PhD, Tweardy, David J., MD, Cai, Chengzhi, PhD

    Published in Nanomedicine (01-04-2012)
    “…Abstract We have found in vitro that a biofilm of benign Escherichia coli 83972 interferes with urinary catheter colonization by pathogens, and in human…”
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