Search Results - "Li, Sheng S"

Investigation of rapid thermal annealing on Cu(In,Ga)Se2 films and solar cells by XUEGE WANG, LI, Sheng S, KIM, W. K, YOON, S, CRACIUN, V, HOWARD, J. M, EASWARAN, S, MANASREH, O, CRISALLE, O. D, ANDERSON, T. J

“…Rapid thermal annealing (RTA), with fast ramp rate, was performed on several Cu(In,Ga)Se2 (CIGS) films and solar cells under various peak annealing…”
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Device modeling and simulation of the performance of Cu(In1−x,Gax)Se2 solar cells by Song, Jiyon, Li, Sheng S., Huang, C.H., Crisalle, O.D., Anderson, T.J.

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Investigation of defect properties in Cu(In,Ga)Se2 solar cells by deep-level transient spectroscopy by Kerr, L.L., Li, Sheng S., Johnston, S.W., Anderson, T.J., Crisalle, O.D., Kim, W.K., Abushama, J., Noufi, R.N.

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Study of intersubband transition in quantum dots and quantum dot infrared photodetectors by Jiang, Xudong, Li, Sheng S., Tidrow, M.Z.

“…In this paper the intersubband optical transitions in quantum dots are studied. Theoretical calculations of peak wavelengths and oscillator strengths of the…”
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Modeling and parameter extraction of gate-all-around nMOS/SOI transistors in the linear region by Chang, Yun-Shan, Li, Sheng S.

“…Analytical models valid in weak, strong and moderate inversion regions are derived for the gate-all-around (GAA) nMOS silicon-on-insulator (SOI) MOSFETs. The…”
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A high strain two-stack two-color quantum well infrared photodetector by Tidrow, M. Z., Chiang, J. C., Li, Sheng S., Bacher, K.

“…A high strain two-stack, two-color, InGaAs/AlGaAs and AlGaAs/GaAs quantum well infrared photodetector for midwavelength infrared (MWIR) and long wavelength…”
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A four-color quantum well infrared photodetector by Tidrow, M. Z., Jiang, Xudong, Li, Sheng S., Bacher, K.

“…A four-color quantum well infrared photodetector (QWIP) has been demonstrated in this work. Four stacks of quantum well structures with four different…”
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Investigation of pulsed non-melt laser annealing on the film properties and performance of Cu(In, Ga)Se2 solar cells by XUEGE WANG, LI, Sheng S, HUANG, C. H, RAWAL, S, HOWARD, J. M, CRACIUN, V, ANDERSON, T. J, CRISALLE, O. D

“…Pulsed non-melt laser annealing (NLA) has been used for the first time to modify near-surface defects and related junction properties in Cu(In,Ga)Se2 (CIGS)…”
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Recent progress in quantum well infrared photodetectors and focal plane arrays for IR imaging applications by Li, Sheng S

“…Rapid progress in III–V semiconductor quantum well infrared photodetectors (QWIPs) has made it possible to develop large area, uniform, high performance…”
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A metal grating coupled bound-to-miniband transition GaAs multiquantum well/superlattice infrared detector by YU, L. S, LI, S. S

“…We report here a new metal grating coupled top illumination, bound-to-miniband transition multiple quantum well/superlattice GaAs/AlGaAs long wavelength…”
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Study of Cd-free buffer layers using Inx(OH, S)y on CIGS solar cells by HUANG, C. H, LI, Sheng S, HOLLOWAY, P. H, SHAFARMAN, W. N, CHANG, C.-H, LAMBERS, E. S, RIETH, L, JOHNSON, J. W, KIM, S, STANBERY, B. J, ANDERSON, T. J

“…The alternative buffer layer material Inx(OH,S)y was deposited on Cu(In,Ga)Se2 (CIGS) thin films by chemical-bath-deposition (CBD). The impurities in…”
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A high performance quantum well infrared photodetector using superlattice-coupled quantum wells for long wavelength infrared detection by Moon, Junhee, Li, Sheng S., Hee Lee, Jung

“…A high performance InGaAs/GaAs/AlGaAs superlattice-coupled quantum well infrared (IR) photodetector grown on the semi-insulating GaAs substrates by using…”
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A two-stack, multi-color quantum well infrared photodetector for mid- and long-wavelength infrared detection by Li, Sheng S., Kim, Seung-Hwan, Moon, Jun-Hee, Lee, Jung Hee

“…In this paper we report a high performance two-stack, multi-color quantum well infrared photodetector (QWIP) composed of an InGaAs/AlGaAs QWIP and an…”
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Correlation of implantation defects with interface recombination velocities and carrier lifetimes in annealed SIMOX SOI materials by using a contactless optical modulation technique by Chang, Y.-S, Li, Sheng S, Datta, R, Allen, L.P

“…A contactless dual-beam optical modulation (DBOM) technique [Y. S. Chang and S. S. Li, Solid-State Electron., 1995, 38, 297–304, Y. S. Chang, S. S. Li and P…”
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A two-stack, multi-color In0.5Ga0.5As/GaAs and lnAs/GaAs quantum dot infrared photodetector for long wavelength infrared detection by LIN JIANG, LI, Sheng S, LIU, W.-S, YEH, N.-T, CHYI, J.-I

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Device modeling and simulation of the performance of Cu(In 1− x,Ga x)Se 2 solar cells by Song, Jiyon, Li, Sheng S., Huang, C.H., Crisalle, O.D., Anderson, T.J.

“…Device modeling and simulation studies of a Cu(In 1− x ,Ga x )Se 2 (CIGS) thin film solar cell have been carried out. A variety of graded band-gap structures,…”
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Investigation of rapid thermal annealing on Cu(In,Ga)Se 2 films and solar cells by Wang, Xuege, Li, Sheng. S., Kim, W.K., Yoon, S., Craciun, V., Howard, J.M., Easwaran, S., Manasreh, O., Crisalle, O.D., Anderson, T.J.

“…Rapid thermal annealing (RTA), with fast ramp rate, was performed on several Cu(In,Ga)Se 2 (CIGS) films and solar cells under various peak annealing…”
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Measurements of film carrier lifetimes in silicon-on-insulator wafers by a contactless dual-beam optical modulation technique by PING-CHANG YANG, LI, S. S

“…A contactless dual-beam optical modulation (DBOM) technique has been applied to measure the film carrier lifetimes in the SIMOX (separation by implantation of…”
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Investigation of defect properties in Cu(In,Ga)Se 2 solar cells by deep-level transient spectroscopy by Kerr, L.L., Li, Sheng S., Johnston, S.W., Anderson, T.J., Crisalle, O.D., Kim, W.K., Abushama, J., Noufi, R.N.

“…The performance of the chalcopyrite material Cu(In,Ga)Se 2 (CIGS) used as an absorber layer in thin-film photovoltaic devices is significantly affected by the…”
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High quality In0.53Ga0.47As Schottky diode formed by graded superlattice of In0.53Ga0.47As/In0.52Al0.48As by LEE, D. H, LI, S. S, SAUER, N. J, CHANG, T. Y

“…A high quality In0.53Ga0.47As Schottky barrier diode fabricated by using a thin graded superlattice (SL) of In0.53Ga0.47As/In0.52Al0.48As grown by molecular…”
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