Search Results - "Li, Brian D."

Improving the performance of GaInP solar cells through rapid thermal annealing and delta doping by Sun, Yukun, Li, Brian D., Hool, Ryan D., Fan, Shizhao, Kim, Mijung, Lee, Minjoo Larry

“…We show that the effect of rapid thermal annealing (RTA) on carrier lifetime in GaInP grown by molecular beam epitaxy depends strongly on both doping type and…”
Get full text

2.0–2.2 eV AlGaInP solar cells grown by molecular beam epitaxy by Sun, Yukun, Fan, Shizhao, Faucher, Joseph, Hool, Ryan D., Li, Brian D., Dhingra, Pankul, Lee, Minjoo Larry

“…We demonstrate 2.0–2.2 eV AlGaInP solar cells grown by molecular beam epitaxy and their performance improvement by rapid thermal annealing (RTA). As grown,…”
Get full text

16.8%-Efficient n+/p GaAs Solar Cells on Si With High Short-Circuit Current Density by Fan, Shizhao, Jung, Daehwan, Sun, Yukun, Li, Brian D., Martin-Martin, Diego, Lee, Minjoo L.

“…The highest efficiency heteroepitaxial GaAs solar cells on Si have historically been grown in the p + /n polarity, which was preferred due to the decreased…”
Get full text

Current-Matched III–V/Si Epitaxial Tandem Solar Cells with 25.0% Efficiency by Fan, Shizhao, Yu, Zhengshan J., Hool, Ryan D., Dhingra, Pankul, Weigand, William, Kim, Mijung, Ratta, Erik D., Li, Brian D., Sun, Yukun, Holman, Zachary C., Lee, Minjoo L.

“…III–V/Si epitaxial tandems with a 1.7-eV GaAsP top cell promise stable power conversion efficiencies above the fundamental limit of Si single-junction cells…”
Get full text

Cryogenic Operation of GaAs Laser Power Converters by Kim, Bora, Kim, Mijung, Li, Brian D., Hool, Ryan D., Lee, Minjoo L.

“…We present strategies to achieve efficient operation of GaAs laser power converters (LPCs) at cryogenic temperatures under 808 nm high-power laser light. Due…”
Get full text

Reducing the dependence of threading dislocation density on doping for GaAsP/GaP on Si by Hool, Ryan D., Li, Brian D., Sun, Yukun, Dhingra, Pankul, Tham, Rachel W., Fan, Shizhao, Lee, Minjoo Larry

“…We compare ~1.7 eV GaAsP top cells grown on GaP/Si templates with different GaAs y P 1-y /GaP buffer layer doping, either unintentionally-doped (UID) or…”
Get full text

Importance of Long-lifetime n-GaInP for High-efficiency GaInP Solar Cells Grown by MBE by Sun, Yukun, Li, Brian D., Hool, Ryan D., Fan, Shizhao, Kim, Mijung, Lee, Minjoo Larry

“…We present a systematic photoluminescence (PL) study on the effects of doping and rapid thermal annealing (RTA) conditions on n- and p-GaInP…”
Get full text

Effects of Graded Buffer Design and Active Region Structure on GaAsP Single-Junction Solar Cells Grown on GaP/Si Templates by Fan, Shizhao, Hool, Ryan D., Dhingra, Pankul, Kim, Mijung, Ratta, Erik D., Li, Brian D., Sun, Yukun, Yu, Zhengshan J., Holman, Zachary C., Lee, Minjoo L.

“…We investigated the effect of GaAs y P 1-y graded buffer layer design and cell structure on GaAsP solar cells grown on GaP/Si templates. Heavy Si doping in the…”
Get full text

Epitaxial GaAsP/Si Solar Cells with High Quantum Efficiency by Fan, Shizhao, Yu, Zhengshan J., Hool, Ryan D., Dhingra, Pankul, Weigand, William, Kim, Mijung, Ratta, Erik D., Li, Brian D., Sun, Yukun, Holman, Zachary C., Lee, Minjoo L.

“…We review recent progress in GaAsP/Si tandem cells and present a GaAsP/Si tandem cell with a high total short-circuit current density of 38.2 mA/cm 2 …”
Get full text

Low-threshold InP quantum dot and InGaP quantum well visible lasers on silicon (001) by Dhingra, Pankul, Su, Patrick, Li, Brian D., Hool, Ryan D., Muhowski, Aaron J., Kim, Mijung, Wasserman, Daniel, Dallesasse, John, Lee, Minjoo Larry

“…Monolithically combining silicon nitride ( S i N x ) photonics technology with III-V active devices could open a broad range of on-chip applications spanning a…”
Get full text

Comparison of 1.9 eV InGaP front- and rear-junction solar cells grown on Si by Li, Brian D., Dhingra, Pankul, Hool, Ryan D., Fan, Shizhao, Lee, Minjoo Larry

“…In this work, we compare the performance of front-junction (FJ) and rear-heterojunction (RHJ) 1.9 eV InGaP solar cells grown on Si by molecular beam epitaxy…”
Get full text

Low-threshold InP quantum dot and InGaP quantum well visible lasers on silicon (001) by Dhingra, Pankul, Su, Patrick, Li, Brian D, Hool, Ryan D, Muhowski, Aaron J, Kim, Mijung, Wasserman, Daniel, Dallesasse, John, Lee, Minjoo Larry

“…Monolithically combining silicon nitride (SiNx) photonics technology with III-V active devices could open a broad range of on-chip applications spanning a wide…”
Get full text