Search Results - "Leyris, C."

Low-Frequency Noise Investigation and Noise Variability Analysis in High- k/Metal Gate 32-nm CMOS Transistors by Lopez, D., Haendler, S., Leyris, C., Bidal, G., Ghibaudo, G.

“…Low-frequency noise (LFN) of high- k /metal stack nMOS and pMOS transistors is experimentally studied. Results obtained on 32-nm complementary…”
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0.13 \mu m SiGe BiCMOS Technology Fully Dedicated to mm-Wave Applications by Avenier, G., Diop, M., Chevalier, P., Troillard, G., Loubet, N., Bouvier, J., Depoyan, L., Derrier, N., Buczko, M., Leyris, C., Boret, S., Montusclat, S., Margain, A., Pruvost, S., Nicolson, S.T., Yau, K.H.K., Revil, N., Gloria, D., Dutartre, D., Voinigescu, S.P., Chantre, A.

“…This paper presents a complete 0.13 μm SiGe BiCMOS technology fully dedicated to millimeter-wave applications, including a high-speed (230/280 GHz f T /f MAX )…”
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FDSOI devices with thin BOX and ground plane integration for 32 nm node and below by Fenouillet-Beranger, C., Denorme, S., Perreau, P., Buj, C., Faynot, O., Andrieu, F., Tosti, L., Barnola, S., Salvetat, T., Garros, X., Cassé, M., Allain, F., Loubet, N., Pham-Nguyen, L., Deloffre, E., Gros-Jean, M., Beneyton, R., Laviron, C., Marin, M., Leyris, C., Haendler, S., Leverd, F., Gouraud, P., Scheiblin, P., Clement, L., Pantel, R., Deleonibus, S., Skotnicki, T.

“…In this paper we compare Fully-Depleted SOI (FDSOI) devices with different BOX (Buried Oxide) thicknesses with or without ground plane (GP). With a simple…”
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I–V and low frequency noise characterization of poly and amorphous silicon Ti- and Co-salicide resistors by Raoult, J., Pascal, F., Leyris, C.

“…Accurate characterization of polysilicon resistors can help in the design and the fabrication of deep-sub-micron CMOS technologies. In this paper we have…”
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N-MOSFET oxide trap characterization induced by nitridation process using RTS noise analysis by Leyris, C., Martinez, F., Hoffmann, A., Valenza, M., Vildeuil, J.C.

“…This paper presents oxide trap characterization of nitrided and non-nitrided gate oxide N-MOSFETs using low frequency noise (LFN) measurements. The…”
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Investigation of a Sequential Three-Dimensional Process for Back-Illuminated CMOS Image Sensors With Miniaturized Pixels by Coudrain, P., Magnan, P., Batude, P., Gagnard, X., Leyris, C., Vinet, M., Castex, A., Lagahe-Blanchard, C., Pouydebasque, A., Cazaux, Y., Giffard, B., Ancey, P.

“…A new 3-D CMOS image sensor architecture is presented as a potential candidate for submicrometer pixels. To overcome the scaling challenge related to…”
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Impact of Random Telegraph Signal in CMOS Image Sensors for Low-Light Levels by Leyris, C., Martinez, F., Valenza, M., Hoffmann, A., Vildeuil, J.C., Roy, F.

“…This paper presents the investigation of fluctuating pixels resulting from the random telegraph signal (R.T.S) of the source-follower transistor. The work…”
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Random telegraph signal: A sensitive and nondestructive tool for gate oxide single trap characterization by Leyris, C., Martinez, F., Valenza, M., Hoffmann, A., Vildeuil, J.C.

“…This paper presents the electrical characterization of thick and thin SiO 2 oxynitride performed by thermal and plasma nitridation processes. The impact of the…”
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Oxide traps characterization of 45 nm MOS transistors by gate current R.T.S. noise measurements by Martinez, F., Leyris, C., Neau, G., Valenza, M., Hoffmann, A., Vildeuil, J.C., Vincent, E., Boeuf, F., Skotnicki, T., Bidaud, M., Barge, D., Tavel, B.

“…A characterization of traps in ultrathin-oxide MOSFETs by low frequency noise measurements is presented. Drain and gate current noise measurements are…”
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Noise as a characterization tool for reliability under illumination of transfer gate transistor for image sensors applications by Lopez, D., Leyris, C., Ricq, S., Balestra, F.

“…This paper presents reliability investigations on specific CMOS transistors for image sensors applications. Reliability tests under sunlight illumination show…”
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Low-frequency noise measurements as an investigation tool of pixel flickering in cooled Hg/sub 0.7/Cd/sub 0.3/Te focal plane arrays by Perez, J.-P., Myara, M., Alabedra, R., Orsal, B., Leyris, C., Tourrenc, J.-P., Signoret, P.

“…We report on electrical noise measurements on both Hg/sub 0.7/Cd/sub 0.3/Te test patterns and hybrid 320 /spl times/ 256 focal plane array in order to explain…”
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Low-Frequency Noise Investigation and Noise Variability Analysis in High- [Formula Omitted]/Metal Gate 32-nm CMOS Transistors by Lopez, Diana, Haendler, S, Leyris, C, Bidal, Gregory, Ghibaudo, Gérard

“…Low-frequency noise (LFN) of high-[Formula Omitted]/metal stack nMOS and pMOS transistors is experimentally studied. Results obtained on 32-nm complementary…”
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Low-Frequency Noise Investigation and Noise Variability Analysis in High-k/Metal Gate 32-nm CMOS Transistors : CHARACTERIZATION OF NANO CMOS VARIABIALITY BY SIMULATION AND MEASUREMENTS by LOPEZ, Diana, HAENDLER, S, LEYRIS, C, BIDAL, Gregory, GHIBAUDO, Gérard

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Response of Correlated Double Sampling CMOS Imager Circuit to Random Telegraph Signal Noise by Leyris, C., Vildeuil, J.C., Roy, F., Martinez, F., Valenza, M., Hoffmann, A.

“…This paper presents analytical and experimental noise of a correlated double sampling (CDS) readout circuit used in CMOS active pixel image sensors. The work…”
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Comparison and development of dynamic flux chambers to determine odorous compound emission rates from area sources by Leyris, Carole, Guillot, Jean-Michel, Fanlo, Jean-Louis, Pourtier, Lionel

“…Two dynamic flux chambers for direct measurement of odorous compound emissions from quiescent liquid surfaces were investigated under simulated conditions in…”
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GeOI and SOI 3D monolithic cell integrations for high density applications by Batude, P., Vinet, M., Pouydebasque, A., Le Royer, C., Previtali, B., Tabone, C., Clavelier, L., Michaud, S., Valentian, A., Thomas, O., Rozeau, O., Coudrain, P., Leyris, C., Romanjek, K., Garros, X., Sanchez, L., Baud, L., Roman, A., Carron, V., Grampeix, H., Augendre, E., Toffoli, A., Allain, F., Grosgeorges, P., Mazzochi, V., Tosti, L., Andrieu, F., Hartmann, J.-M., Lafond, D., Deleonibus, S., Faynot, O.

“…In this work, 3D monolithic cells have been demonstrated, featuring the first perfectly crystalline upper active layer thanks to wafer bonding. The low…”
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0.13mu$ m SiGe BiCMOS Technology Fully Dedicated to mm-Wave Applications by Voinigescu, S P, Revil, N, Chevalier, P, Pruvost, S, Bouvier, J, Avenier, G, Troillard, G, Depoyan, L, Buczko, M, Montusclat, S, Margain, A, Nicolson, S T, Yau, K.H.K., Gloria, D, Chantre, A, Diop, M, Loubet, N, Derrier, N, Leyris, C

“…This paper presents a complete 0.13 mum SiGe BiCMOS technology fully dedicated to millimeter-wave applications, including a high-speed (230/280 GHz…”
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Random Telegraph Signal noise : a sensitive and non-destructive tool for gate oxide single trap characterization by Leyris, C., Martinez, F., Valenza, M., Hoffmann, A., Vildeuil, J.C.

“…This paper presents the electrical characterization of thick and thin SiO2 oxynitride performed by thermal and plasma nitridation processes. The impact of the…”
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0.13 [Formula Omitted]m SiGe BiCMOS Technology Fully Dedicated to mm-Wave Applications by Avenier, G, Diop, M, Chevalier, P, Troillard, G, Loubet, N, Bouvier, J, Depoyan, L, Derrier, N, Buczko, M, Leyris, C, Boret, S, Montusclat, S, Margain, A, Pruvost, S, Nicolson, S.T, Yau, K.H.K, Revil, N, Gloria, D, Dutartre, D, Voinigescu, S.P, Chantre, A

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Low-Frequency Noise Measurements as an Investigation Tool of Pixel Flickering in Cooled Hg $_0.7 hbox Cd_0.3$ Te Focal Plane Arrays by Perez, J.-P., Myara, M., Alabedra, R., Orsal, B., Leyris, C., Tourrenc, J.-P., Signoret, P.

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