Search Results - "Lewalter, H."

Formation of tantalum nitride films by rapid thermal processing by Angelkort, C, Berendes, A, Lewalter, H, Bock, W, Kolbesen, B.O

“…As part of an investigation of transition metal nitrides formed by means of rapid thermal processing, the reactivity of 200/500-nm thick tantalum films…”
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Formation and nitridation of vanadium-aluminum intermetallic compounds by Lewalter, H, Bock, W, Kolbesen, B O

“…V(5)Al(8) and V(3)Al intermetallics have been formed by interdiffusion, by annealing of sputtered V/Al-multilayers at 700 degrees C in vacuo; sapphire (102)…”
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Formation of niobium nitride by rapid thermal processing by Angelkort, C, Lewalter, H, Warbichler, P, Hofer, F, Bock, W, Kolbesen, B.O

“…The formation of group V transition metal nitride films by means of rapid thermal processing (RTP) has been investigated. Here we focus on the nitridation of…”
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Nitridation of V5Al8 films with NH3 by Rapid Thermal Processing (RTP) by Lewalter, H., Kolbesen, B. O.

“…V5Al8 films (thickness about 100 nm) were deposited on sapphire substrates by RF‐sputtering and nitridated with NH3 at 600‐1250 °C (1 min) in a RTP system. The…”
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Nitridation of vanadium in molecular nitrogen: a comparison of rapid thermal processing (RTP) and conventional furnace annealing by Galesic, I, Reusch, U, Angelkort, C, Lewalter, H, Berendes, A, Schweda, E, Kolbesen, B.O

“…The nitridation processes of thin V films in molecular nitrogen at atmospheric pressure in a RTP-system, a conventional tube furnace and a high temperature in…”
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Formation of Transition Metal Nitrides by Rapid Thermal Processing (RTP) by Galesic, I., Angelkort, C., Lewalter, H., Berendes, A., Kolbesen, B.O.

“…Rapid thermal processing (RTP) was used to prepare group‐5 transition metal (V, Nb, Ta) nitride films and to study the early stages of nitrogen incorporation…”
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Nitridation of V 5 Al 8 films with NH 3 by Rapid Thermal Processing (RTP) by Lewalter, H., Kolbesen, B. O.

“…V 5 Al 8 films (thickness about 100 nm) were deposited on sapphire substrates by RF‐sputtering and nitridated with NH 3 at 600‐1250 °C (1 min) in a RTP system…”
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366No support for additional left atrial substrate modification among patients with persistent atrial fibrillation at first PVI procedure - results from German Ablation registry by Jilek, C, Brachmann, J, Lewalter, T H, Kuck, K H, Andresen, D, Willems, S G, Spitzer, S G, Straube, F, Schumacher, B, Eckardt, L, Danilovic, D, Thomas, D, Hochadel, M, Senges, J

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