Search Results - "Levin, M.N"

Aerosol deposition of thin-film solid electrolyte membranes for anode-supported solid oxide fuel cells by Erilin, I.S., Agarkov, D.A., Burmistrov, I.N., Pukha, V.E., Yalovenko, D.V., Lyskov, N.V., Levin, M.N., Bredikhin, S.I.

“…•Fabrication routine of SOFCs with thin-film aerosol deposited solid electrolyte.•Annealed electrolyte shows dense structure without gas leaks and conductive…”
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Relationships between mechanical stability of the anode supports and electrochemical performance of intermediate-temperature SOFCs by Agarkova, E.A., Zadorozhnaya, O.Yu, Burmistrov, I.N., Yalovenko, D.V., Agarkov, D.A., Rabotkin, S.V., Solovyev, A.A., Nepochatov, Yu.K., Levin, M.N., Bredikhin, S.I.

“…[Display omitted] •Anode supports for solid oxide fuel cells were fabricated by tape casting.•Anode supports were fabricated without pore-former.•Absence of…”
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Identification of volatile organic compounds by retention times and ion mobility spectra by Levin, M. N., Lantsuzskaya (Krisilova), E. V.

“…Retention times are determined and ion mobility spectra are recorded for reference substances belonging to the homologous series of saturated aldehydes,…”
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Defect-induced lattice magnetism: Phenomenology of magnetic-field-stimulated defect reactions in nonmagnetic solids by Belyavsky, V. I., Levin, M. N., Olson, N. J.

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Structural Synthesis of System of Remote Interrogation of Metering Devices by Repkina, N.G., Repkin, D.A., Levin, M.N.

“…The relevance of the article is determined by the development of measuring instrument production, the expansion of their nomenclature and modernization, as…”
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Magnetic-field induced generation of A-like centers in Cz-Si crystals by Levin, M.N., Zon, B.A.

“…The effect of the constant magnetic-field induced generation of oxygen–vacancy defects in Czochralski-grown silicon crystals was detected for the first time…”
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X-ray and UV controlled adjustment of MOS VLSI circuits threshold voltages by Levin, M.N, Gitlin, V.R, Kadmensky, S.G, Ostrouhov, S.S, Pershenkov, V.S

“…Soft X-ray (∼10 keV) and near ultra-violet radiation based technique for precise adjustment of MOS devices and integrated circuit thresholds has been…”
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Use of preliminary ultraviolet and infrared illumination for diagnostics of MOS and bipolar devices radiation response by Pershenkov, V.S., Avdeev, S.V., Tsimbalov, A.S., Levin, M.N., Belyakov, V.V., Ivashin, D.V., Slesarev, A.Y., Bashin, A.Y., Zebrev, G.I., Ulimov, V.N., Emelianov, V.V.

“…The experimental results on the influence of UV and IR illumination and hydrogen ambient on the radiation response of metal-oxide-semiconductor (MOS) and…”
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The X-ray and UV controlled adjustment of MOSFET threshold voltage by Levin, M.N., Kadmensky, S.G., Pershenkov, V.S.

“…The technique for precise adjustment of MOS-devices threshold voltages using X-ray and UV irradiation is presented. The adjustment is based on formation of…”
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