Search Results - "Lever, R.F."
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2D simulation of the effects of transient enhanced boron out-diffusion from base of SiGe HBT due to an extrinsic base implant
Published in Solid-state electronics (1999)“…Transient enhanced diffusion of boron in SiGe HBTs is studied by comparing measurements of the temperature dependence of the collector current with the…”
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Journal Article -
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Two dimensional simulation of transient enhanced boron out-diffusion from the base of a SiGe HBT due to an extrinsic base implant
Published in Proceedings of the 1997 Bipolar/BiCMOS Circuits and Technology Meeting (1997)“…The effects of an extrinsic base implant in SiGe HBTs are investigated using two dimensional process and device simulation and measurements of collector…”
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Conference Proceeding
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3
Channeling of ions near the silicon axis
Published in Applied physics letters (15-02-1985)“…The first experimental mapping of ion beam channels near the Si (001) axis is reported. All features are identified by theoretical plots of silicon planar…”
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A new approach to the simulation of the coupled point defects and impurity diffusion
Published in IEEE transactions on computer-aided design of integrated circuits and systems (01-10-1990)“…A program, named FINDPRO, has been developed which efficiently solves the coupled diffusion of point defects and multiple impurity species in two dimensions,…”
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Journal Article -
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Species, dose and energy dependence of implant induced transient enhanced diffusion
Published in Proceedings of IEEE International Electron Devices Meeting (1993)“…Special test structures which separate implant damage from a buried monitor boron layer were used to observe the transient diffusion associated with implant…”
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Conference Proceeding