Search Results - "Lescaut, B."

SiON large area deposition with a deep-UV flash argon/krypton lamp array by Flicstein, J., Mba, J., Lescaut, B., Vitel, Y., Ossart, P., Licoppe, C.

“…Silicon oxynitride, SiO x N y ( x, y ∼), grown by flash deep-ultraviolet chemical vapor deposition (FUV CVD) has attractive optical, electrical, mechanical and…”
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Passivation of InP-based HBTs for high bit rate circuit applications by Caffin, D., Bricard, L., Courant, J.L., How Kee Chun, L.S., Lescaut, B., Duchenois, A.M., Meghelli, M., Benchimol, J.L., Launay, P.

“…We have studied different materials (silicon nitride, silicon oxide, polyimide) for passivating InP-based HBTs, and their influence on the device electrical…”
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Cubic phase gallium nitride epitaxially formed on GaAs or GaInAs at low temperature with a NH3 DECR plasma by Nissim, Y.I., Lescaut, B., Leprince, L., Patriarche, G., Bresse, J.F.

“…GaN is a compound semiconductor attractive for its blue band gap (3.45 eV) and its large saturated electron drift velocity. Unfortunately, because of its large…”
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Passivation of InGaAs surfaces with an integrated process including an ammonia DECR plasma by Lescaut, B., Nissim, Y.I., Bresse, J.F.

“…Stable and optimum characteristics of micro-optoelectronic devices and circuits require the passivation of the free surface of the III-V materials. An…”
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