High-Quality InGaAsN Growth by Metalorganic Vapor-Phase Epitaxy Using Nitrogen Carrier Gas and Dimethylhydrazine, Tertiarybutylarsine as Group V Precursors
We have successfully grown GaAsN and InGaAsN layers on GaAs substrate using atmospheric-pressure metalorganic vapor-phase epitaxy (MOVPE). Dimethylhydrazine and tertiarybutylarsine have been employed as sources of nitrogen and arsenic, respectively. To investigate the incorporation behavior of nitro...
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| Published in: | Japanese Journal of Applied Physics Vol. 38; no. 2S; p. 1019 |
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| Main Authors: | , , , , |
| Format: | Journal Article |
| Language: | English |
| Published: |
01-02-1999
|
| Online Access: | Get full text |
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| Summary: | We have successfully grown GaAsN and InGaAsN layers on GaAs substrate using
atmospheric-pressure metalorganic vapor-phase epitaxy (MOVPE). Dimethylhydrazine and
tertiarybutylarsine have been employed as sources of nitrogen and arsenic, respectively. To
investigate the incorporation behavior of nitrogen [N] in GaAsN and InGaAsN layers as a function
of ambient gas in the reactor, growth was performed in the presence of hydrogen H
2
and nitrogen N
2
gases. Good structural quality and surface morphology have been obtained with both gases.
Furthermore, with N
2
ambient gas, an enhancement of nitrogen incorporation has been observed.
The nonradiative carrier lifetime is about 25 ns and is independent of the ambient gas used. This
value is acceptable for laser applications. |
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| ISSN: | 0021-4922 1347-4065 |
| DOI: | 10.1143/JJAP.38.1019 |