Search Results - "Lepadatu, A. M."

Dense Ge nanocrystals embedded in TiO2 with exponentially increased photoconduction by field effect by Lepadatu, A.-M., Slav, A., Palade, C., Dascalescu, I., Enculescu, M., Iftimie, S., Lazanu, S., Teodorescu, V. S., Ciurea, M. L., Stoica, T.

“…Si and Ge nanocrystals in oxides are of a large interest for photo-effect applications due to the fine-tuning of the optical bandgap by quantum confinement in…”
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Effects produced by iodine irradiation on high resistivity silicon by Lazanu, S, Slav, A, Lepadatu, A-M, Stavarache, I, Palade, C, Iordache, G, Ciurea, M L

“…The effects of 5 × 1011 cm−2 6+I127 ions of 28 MeV kinetic energy on high resistivity (100) Si were studied. The profile of primary defects was simulated. The…”
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Correlation between strain and defects in Bi implanted Si by Palade, C., Lepadatu, A.-M., Slav, A., Ciurea, M.L., Lazanu, S.

“…The strain in Si containing group-V impurities is a topical subject of study due to its potential applications in quantum computing. In this paper we study…”
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Non-volatile memory structures with Ge NCs-HfO2 intermediate layer by Palade, C., Slav, A., Lepadatu, A.-M, Maraloiu, A. V., Lazanu, S., Logofatu, C., Teodorescu, V. S., Ciurea, M. L.

“…The structure and charge storage properties of a trilayer structure with Ge nanocrystals embedded in HfO 2 oxide were studied. The trilayer structure HfO 2…”
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Optoelectric charging-discharging of Ge nanocrystals in floating gate memory by Palade, C., Slav, A., Lepadatu, A. M., Maraloiu, A. V., Dascalescu, I., Iftimie, S., Lazanu, S., Ciurea, M. L., Stoica, T.

“…Photo-induced effects on charging and discharging of nanocrystals (NCs) in capacitor memories with Ge NCs in an HfO2 matrix as a floating gate layer are…”
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How morphology determines the charge storage properties of Ge nanocrystals in HfO2 by Slav, A., Palade, C., Lepadatu, A.M., Ciurea, M.L., Teodorescu, V.S., Lazanu, S., Maraloiu, A.V., Logofatu, C., Braic, M., Kiss, A.

“…The strong correlation between morphology and charge storage properties of HfO2/Ge/HfO2/Si trilayer structures was evidenced. The morphology of structures…”
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Modeling of trap discharging processes in Multiple Quantum Well structures by Ciurea, M.L., Iancu, V., Stavarache, I., Lepadatu, A.-M., Rusnac, E.

“…The paper presents the modeling of trap discharging processes in Multiple Quantum Well nanostructures. The coupling between trapping and detrapping phenomena,…”
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Influence of in-situ hydrogenation on photoelectrical properties of amorphous and nanocrystalline GeSn deposited by magnetron sputtering by Dascalescu, I., Palade, C., Lungu, G.A., Lepadatu, A.M., Teodorescu, V.S., Braic, M., Ciurea, M.L., Stoica, T., Slav, A.

“…This study investigates the fabrication of short-wavelength infrared (SWIR) photosensitive amorphous and nanocrystalline Ge1-xSnx:H thin films by magnetron…”
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Material parameters from frequency dispersion simulation of floating gate memory with Ge nanocrystals in HfO2 by Palade, C., Lepadatu, A.M., Slav, A., Lazanu, S., Teodorescu, V.S., Stoica, T., Ciurea, M.L.

“…[Display omitted] Trilayer memory capacitors with Ge nanocrystals (NCs) floating gate in HfO2 were obtained by magnetron sputtering deposition on p-type Si…”
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SWIR photoresponse of SiGe/TiO2 multilayers with Ge-rich SiGe nanocrystals by Lepadatu, A. M., Palade, C., Slav, A., Dascalescu, I., Cojocaru, O., Iftimie, S., Teodorescu, V. S., Stoica, T., Ciurea, M. L.

“…The 1600 nm-extended SWIR photoresponse of SiGe/TiO 2 multilayers with Ge-rich SiGe nanocrystals (NCs) is demonstrated. The SiGe NCs based multilayers are…”
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Light illumination effects on floating gate memory with Ge nanocrystals in HfO2 by Palade, C., Slav, A., Lepadatu, A. M., Lazanu, S., Ciurea, M. L., Stoica, T.

“…The influence of light illumination on the programming of a capacitor floating gate memory based on Ge nanocrystals in HfO 2 was studied. The capacitor was…”
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Controlling SWIR photosensitivity limit by composition engineering: from Ge to GeSi nanocrystals embedded in TiO2 by Dascalescu, I., Cojocaru, O., Lalau, I., Palade, C., Slav, A., Lepadatu, A.M., Lazanu, S., Stoica, T., Ciurea, M.L.

“…The VIS-SWIR photosensing properties of Ge and GeSi NCs embedded in TiO 2 films are investigated. For this, we deposit GeTiO 2 and GeSiTiO 2 films,…”
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Dense Ge nanocrystals embedded in TiO 2 with exponentially increased photoconduction by field effect by Lepadatu, A-M, Slav, A, Palade, C, Dascalescu, I, Enculescu, M, Iftimie, S, Lazanu, S, Teodorescu, V S, Ciurea, M L, Stoica, T

“…Si and Ge nanocrystals in oxides are of a large interest for photo-effect applications due to the fine-tuning of the optical bandgap by quantum confinement in…”
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Photosensitive GeSi/TiO2 multilayers in VIS-NIR by Palade, C., Dascalescu, I., Slav, A., Lepadatu, A. M., Lazanu, S., Stoica, T., Teodorescu, V. S., Ciurea, M. L., Comanescu, F., Muller, R., Dinescu, A., Enuica, A.

“…The electrical and photosensing properties correlated with structure and morphology of TiO 2 /(GeSi/TiO 2 ) 2 multilayers are investigated. The multilayers are…”
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Fast atomic diffusion in amorphous films induced by laser pulse annealing by Teodorescu, V. S., Ghica, C., Maraloiu, A. V., Kuncser, A., Lepadatu, A. M., Stavarache, I., Ciurea, M. L., Scarisoreanu, N. D., Andrei, A., Dinescu, M.

“…Fast atomic diffusion was evidenced in the surface layer of amorphous thin films of oxides and semiconductors irradiated with low fluence UV pulse laser. This…”
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Preparation induced electrical behaviour of GeSiO nanostructures by Stavarache, I., Lepadatu, A-M, Ciurea, M. L.

“…GeSiO nanostructures obtained by using two different preparation methods, sol-gel and magnetron-sputtering were studied. They are formed from Ge nanoparticles…”
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Percolation Phenomena in Silicon - Based Nanocrystalline Systems by Lepadatu, A.M., Rusnac, E., Stavarache, I.

“…The present paper analyzes the appearance of voltage percolation thresholds in the current-voltage characteristics measured on silicon-based nanocrystalline…”
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Iodine irradiation induced defects in crystalline silicon by Slav, A., Lepadatu, A.-M, Palade, C., Stavarache, I., Iordache, G., Ciurea, M. L., Lazanu, S., Mitroi, M. R.

“…N-type P-doped silicon single crystals with resistivity higher than 8000 Ωcm were irradiated with 127 I 6+ ions of 28 MeV kinetic energy. The penetration of…”
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MOS Dosimeter Based on Ge Nanocrystals in Hfo2 by Palade, C., Slav, A., Lepadatu, A.M., Stavarache, I., Dascalescu, I., Cojocaru, O., Stoica, T., Ciurea, M.L., Lazanu, S.

“…Trilayer MOS capacitors gate HfO 2 / floating gate of Ge nanocrystals in HfO 2 / tunnel HfO 2 / Si substrate were prepared in the aim to be used for the…”
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