Search Results - "Leoni, Robert E"

Wide-Bandwidth Power-Combining and Inverse Class-F GaN Power Amplifier at X-Band by Stameroff, A. N., Ta, H. H., Anh-Vu Pham, Leoni, R. E.

“…In this paper, we present a wide bandwidth power amplifier (PA) utilizing a Marchand balun to achieve power combining and inverse class-F (class-F -1 )…”
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High performance devices: proceedings of the 2004 IEEE Lester Eastman Conference on High Performance Devices, Rensselaer Polytechnic Institute, 4-6 August 2004 by Leoni, Robert E

“…This volume presents state-of-the-art works from top academic and research institutions in the areas of high performance semiconductor materials, devices, and…”
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High Performance Devices - Proceedings Of The 2004 Ieee Lester Eastman Conference by Leoni, Robert

“…This volume presents state-of-the-art works from top academic and research institutions in the areas of high performance semiconductor materials, devices, and…”
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Design of 600-W Low-Loss Ultra-Wideband Ferriteless Balun by Pham, Chi Van, Pham, Anh-Vu, Leoni, Robert E.

“…We present the development of a low-loss, high-power, and ferriteless balun that operates over 0.1-1.6 GHz bandwidth. The proposed balun employs a novel…”
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A Novel Broadband Even-Mode Matching Network for Marchand Baluns by Chen, A.C., Anh-Vu Pham, Leoni, R.E.

“…In this paper, we present the development of an even-mode matching network for a Marchand balun to achieve 50-¿ match and high isolation at the balanced ports…”
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Development of low-loss broad-band planar baluns using multilayered organic thin films by Chen, A.C., Anh-Vu Pham, Leoni, R.E.

“…This paper presents the design and development of a low-loss and wide-band width multilayered Marchand balun. The balun has been implemented using printed…”
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Active simultaneous harmonic source and load pull assisted by local polyharmonic distortion models by Leoni, Robert E, Harris, Scott A, Ries, David G

“…The efficiency of a power amplifier is a strong function of the core transistor technology and the circuitry that is wrapped around it. There are many…”
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High efficiency push-pull inverse class F power amplifier using a balun and harmonic trap waveform shaping network by Stameroff, Alexander N, Anh-Vu Pham, Leoni, Robert E

“…We present the design and development of a push-pull inverse class F power amplifier in X band using a novel harmonic matching network. The harmonic matching…”
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Millimeter-wave low-noise and high-power metamorphic HEMT amplifiers and devices on GaAs substrates by Whelan, C.S., Kazior, T.E., Marsh, P.F., Hoke, W.E., McTaggart, R.A., Lyman, P.S., Lemonias, P.J., Lardizabal, S.M., Leoni, R.E., Lichwala, S.J.

“…This paper reports on state of-the-art HEMT devices and circuit results utilizing 32% and 60% indium content InGaAs channel metamorphic technology on GaAs…”
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Mechanism for recoverable power drift in PHEMTs by Leoni, R.E., Bao, J., Bu, J., Du, X., Shirokov, M.S., Hwang, J.C.M.

“…A new degradation mechanism is proposed for output power drift under rf overdrive of pseudomorphic high electron mobility transistors (PHEMT's). Similar to the…”
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K-band receiver front-ends in a GaAs metamorphic HEMT process by Matinpour, B., Lal, N., Laskar, J., Leoni, R.E., Whelan, C.S.

“…In this paper, we present K-band receiver blocks fabricated in a state-of-the-art 0.18-/spl mu/m GaAs metamorphic high electron-mobility transistor (MHEMT)…”
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A transient SPICE model for digitally modulated RF characteristics of ion-implanted GaAs MESFET's by Shirokov, M.S., Leoni, R.E., Bao, J., Hwang, J.C.M.

“…A transient SPICE model, which was previously developed for epitaxial GaAs MESFET's, was modified for ion-implanted GaAs MESFET's. The model accounts for both…”
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A phenomenologically based transient SPICE model for digitally modulated RF performance characteristics of GaAs MESFETs by Leoni, R.E., Shirokov, M.S., Jianwen Bao, Hwang, J.C.M.

“…A phenomenologically based transient SPICE model was developed for GaAs MESFETs. The model accounts for both trapping and detrapping effects; hence, it can…”
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A 46: 1 Bandwidth Ratio Balun on Multilayer Organic Substrate by Chi Van Pham, Binh Pham, Anh-Vu Pham, Leoni, Robert E.

“…We present the design and fabrication of an ultra-wide bandwidth balun on a multilayer organic Liquid Crystal Polymer substrate. Using a novel U-shaped…”
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A 23:1 bandwidth ratio balun on multilayer organic substrate by Hai Hoang Ta, Binh Pham, Anh-Vu Pham, Leoni, Robert E.

“…We present the design and development of a novel, super wide bandwidth balun on a multilayer organic Liquid Crystal Polymer (LCP) substrate. The balun has a…”
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AlGaN/GaN high electron mobility transistors on Si(111) substrates by Chumbes, E.M., Shealy, J.R., Schremer, A.T., Smart, J.A., Wang, Y., MacDonald, N.C., Hogue, D., Komiak, J.J., Lichwalla, S.J., Leoni, R.E.

“…AlGaN/GaN high electron mobility transistors (HEMTs) on silicon substrates have for the first time been realized using organometallic vapor phase epitaxy…”
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Wide-Bandwidth Power-Combining and Inverse Class-F GaN Power Amplifier at [Formula Omitted]-Band by Stameroff, Alexander N, Ta, Hai H, Pham, Anh-Vu, Leoni III, Robert E

“…In this paper, we present a wide bandwidth power amplifier (PA) utilizing a Marchand balun to achieve power combining and inverse class-F (class-F[Formula…”
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Mechanisms for output power expansion and degradation of PHEMT's during high-efficiency operation by Leoni, R.E., Hwang, J.C.M.

“…PHEMT stability in high efficiency power amplifiers (where the PHEMT is typically driven into reverse gate-drain breakdown) has been examined under accelerated…”
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