Search Results - "Lentz, J.L."

Effects of oxide interface traps and transient enhanced diffusion on the process modeling of PMOS devices by Vuong, H.-H., Rafferty, C.S., Eshraghi, S.A., Lentz, J.L., Zeitzoff, P.M., Pinto, M.R., Hillenius, S.J.

“…We present a model which simulates the trapping of arsenic and boron dopants at the silicon-silicon dioxide interface, and demonstrate that this model gives…”
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An improved electron and hole mobility model for general purpose device simulation by Darwish, M.N., Lentz, J.L., Pinto, M.R., Zeitzoff, P.M., Krutsick, T.J., Hong Ha Vuong

“…A new, comprehensive, physically-based, semiempirical, local model for transverse-field dependent electron and hole mobility in MOS transistors is presented…”
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A 40Gb/s CWDM-TDM PON with a cyclic CWDM multiplexer/demultiplexer by Iannone, P.P., Reichmann, K.C., Doerr, C.R., Buhl, L.L., Cappuzzo, M.A., Chen, E.Y., Gomez, L.T., Johnson, J.E., Kanan, A.M., Lentz, J.L., McDonough, R.

“…We demonstrate a 40-Gb/s hybrid CWDM-TDM PON with a novel remote node including a cyclic CWDM multiplexer/demultiplexer. The system uses commercially available…”
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Spot-size-converted 1.3 /spl mu/m directly-modulated Fabry-Perot and distributed feedback lasers suitable for passive alignment and 2.5 gb/s operation at 85/spl deg/C by Klotzkin, D., Sheridan-Eng, J., Mazzatesta, A., Ford, G., Laquindinum, J., Chien, M., Park, M., Michel, E., Kinkel, R., Roycroft, S., Ketelsen, L.J.P., Johnson, J.E., Sputz, S.K., Lentz, J.L., Alam, M.A., Hybertsen, M.S., Reynolds, C.L., Glogovsky, K.G., Stampone, D., Chu, S.N.G., Romero, D., Freund, J., Liebenguth, R., Walters, F.

“…Fabry-Perot and distributed feedback spot size converted 1.3 /spl mu/m lasers are demonstrated with competitive performance (/spl sim/10 mA threshold, >0.30…”
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