Search Results - "Lenrick, F."

Spatially resolved structural and chemical properties of the white layer in machined Inconel 718 super alloy by A. B. Marçal, L., Dierks, H., Bushlya, V., Lazar, I., Dzhigaev, D., Ren, Z., Rysov, R., Björling, A., Sprung, M., Mikkelsen, A., Lenrick, F., M'Saoubi, R., Wallentin, J.

“…[Display omitted] •White layer grains show preferential orientation after machining.•Dissolution of γ’’ and δ precipitates lead to chemical homogeneity of the…”
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Influence of sub-surface deformation induced by machining on stress corrosion cracking in lead-free brass by Johansson, Jakob, Bushlya, Volodymyr, Obitz, Charlotta, M’Saoubi, Rachid, Hagström, Joacim, Lenrick, Filip

“…New stricter regulations on lead (Pb) content in brass for use in certain applications is driving the industry from traditional leaded brass towards Pb-free…”
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On chemical and diffusional interactions between PCBN and superalloy Inconel 718: Imitational experiments by Bushlya, V., Bjerke, A., Turkevich, V.Z., Lenrick, F., Petrusha, I.A., Cherednichenko, K.A., Ståhl, J.-E.

“…During a metal cutting process, chemical wear can become the dominant mechanism of tool degradation under the high temperatures and contact pressures that…”
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High-Frequency Performance of Self-Aligned Gate-Last Surface Channel \hbox\hbox\hbox MOSFET by Egard, M., Ohlsson, L., Arlelid, M., Persson, K.-M, Borg, B. M., Lenrick, F., Wallenberg, R., Lind, E., Wernersson, Lars-Erik

“…We have developed a self-aligned L g = 55 nm In 0.53 Ga 0.47 As MOSFET incorporating metal-organic chemical vapor deposition regrown n ++ In 0.53 Ga 0.47 As…”
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High transconductance self-aligned gate-last surface channel In0.53Ga0.47As MOSFET by Egard, M., Ohlsson, L., Borg, B. M., Lenrick, F., Wallenberg, R., Wernersson, L.-E, Lind, E.

“…In this paper we present a 55 nm gate length In 0.53 Ga 0.47 As MOSFET with extrinsic transconductance of 1.9 mS/μm and on-resistance of 199 Ωμm. The…”
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