Search Results - "Leng, Kangmin"

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  1. 1

    Ferroelectric-programmed photonic computing in monolayer WS2 by Wu, Xing, Xu, Kai, Leng, Kangmin, Ma, Ruihua, Shu, Longlong, Wang, Li, Wang, Qisheng

    Published in Applied physics letters (18-09-2023)
    “…Photonic computing has the potential to significantly improve energy efficiency and data processing speed beyond that of von Neumann architecture. Although…”
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  2. 2

    Artificial synapses based on electric stress induced conductance variation in vertical MoReS3 nanosheets by Xu, Jiaqing, Leng, Kangmin, Huang, Xiaoxiao, Ye, Yunyang, Gong, Junfeng

    Published in Applied physics letters (27-12-2021)
    “…As promising nonvolatile memory devices, memristors based on transition metal dichalcogenides, such as MoS2 and MoTe2, have received much attention for their…”
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  3. 3

    Infrared detection through CMOS detector enabled by reversible luminescence quenching of quantum dots by Wang, Jeffrey Gan, Ma, Ruihua, Wu, Xing, Leng, Kangmin, Wang, Qisheng

    Published in AIP advances (01-02-2023)
    “…The detection of infrared radiation through a CMOS detector has recently intrigued the scientists and engineers all over the world. This could lower the cost,…”
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  4. 4

    Tunnel Encapsulation Technology for Durability Improvement in Stretchable Electronics Fabrication by Leng, Kangmin, Guo, Chuanfei, Wu, Kang, Wu, Zhigang

    Published in Micromachines (Basel) (14-10-2018)
    “…Great diversity of process technologies and materials have been developed around stretchable electronics. A subset of them, which are made up of zigzag metal…”
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  5. 5

    3D NAND flash memory based on junction-less a-Si:H channel with high on/off current ratio by Yu, Xinyue, Ma, Zhongyuan, Leng, Kangmin, Chen, Tong, Li, Wei, Chen, Kunji, Xu, Jun, Xu, Ling

    Published in AIP advances (01-10-2022)
    “…As the key hardware unit of computing in memory, 3D NAND flash memory has been the focus of the artificial intelligence (AI) era due to its high efficiency in…”
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  6. 6

    Tracing the Si Dangling Bond Nanopathway Evolution ina-SiNx:H Resistive Switching Memory by the Transient Current by Chen, Tong, Leng, Kangmin, Ma, Zhongyuan, Jiang, Xiaofan, Chen, Kunji, Li, Wei, Xu, Jun, Xu, Ling

    Published in Nanomaterials (Basel, Switzerland) (01-01-2023)
    “…With the big data and artificial intelligence era coming, SiNx-based resistive random-access memories (RRAM) with controllable conductive nanopathways have a…”
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  7. 7

    Artificial Neurons and Synapses Based on Al/a-SiNxOy:H/P+-Si Device with Tunable Resistive Switching from Threshold to Memory by Leng, Kangmin, Zhu, Xu, Ma, Zhongyuan, Yu, Xinyue, Xu, Jun, Xu, Ling, Li, Wei, Chen, Kunji

    Published in Nanomaterials (Basel, Switzerland) (18-01-2022)
    “…As the building block of brain-inspired computing, resistive switching memory devices have recently attracted great interest due to their biological function…”
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  8. 8

    Artificial Synapse Consisted of TiSbTe/SiCx:H Memristor with Ultra-high Uniformity for Neuromorphic Computing by Chen, Liangliang, Ma, Zhongyuan, Leng, Kangmin, Chen, Tong, Hu, Hongsheng, Yang, Yang, Li, Wei, Xu, Jun, Xu, Ling, Chen, Kunji

    Published in Nanomaterials (Basel, Switzerland) (19-06-2022)
    “…To enable a-SiCx:H-based memristors to be integrated into brain-inspired chips, and to efficiently deal with the massive and diverse data, high switching…”
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  9. 9

    High Precision Thermoforming 3D-Conformable Electronics with a Phase-Changing Adhesion Interlayer by Wu, Kang, Zhou, Qifeng, Zou, Huaping, Leng, Kangmin, Zeng, Yifan, Wu, Zhigang

    Published in Micromachines (Basel) (26-02-2019)
    “…Modern design-conscious products have raised the development of advanced electronic fabricating technologies. These widely used industrial technologies show…”
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  10. 10

    In situ Reconstructured Alloy Nanosheets Heterojunction for Highly Selective Electrochemical CO 2 Reduction to Formate by Fu, Yao, Zeng, Binghuan, Wang, Xin, Lai, Longsheng, Wu, Qifan, Leng, Kangmin

    Published in Chemistry : a European journal (08-10-2024)
    “…Tin (Sn)-based materials are expected to realize efficient CO electroreduction into formate. Herein, we constructed a heterojunction by depositing Cu on…”
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  11. 11

    In situ Reconstructured Alloy Nanosheets Heterojunction for Highly Selective Electrochemical CO2 Reduction to Formate by Fu, Yao, Zeng, Binghuan, Wang, Xin, Lai, Longsheng, Wu, Qifan, Leng, Kangmin

    Published in Chemistry : a European journal (08-10-2024)
    “…Tin (Sn)‐based materials are expected to realize efficient CO2 electroreduction into formate. Herein, we constructed a heterojunction by depositing Cu on…”
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  12. 12

    Si/CuO Heterojunction‐Based Photomemristor for Reconfigurable, Non‐Volatile, and Self‐Powered In‐Sensor Computing by Leng, Kangmin, Wan, Yu, Fu, Yao, Wang, Li, Wang, Qisheng

    “…In‐sensor computing has attracted considerable interest as a solution for overcoming the energy efficiency and response time limitations of the traditional von…”
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  13. 13

    PbS/CsPbBr3 Heterojunction for Broadband Neuromorphic Vision Sensing by Leng, Kangmin, Guo, Zhiqiang, Chen, Junming, Fu, Yao, Ma, Ruihua, Yu, Xuechao, Wang, Li, Wang, Qisheng

    Published in ACS applied materials & interfaces (14-02-2024)
    “…Neuromorphic light sensors with analogue-domain image processing capability hold promise for overcoming the energy efficiency limitations and latency of von…”
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  14. 14

    PbS/CsPbBr 3 Heterojunction for Broadband Neuromorphic Vision Sensing by Leng, Kangmin, Guo, Zhiqiang, Chen, Junming, Fu, Yao, Ma, Ruihua, Yu, Xuechao, Wang, Li, Wang, Qisheng

    Published in ACS applied materials & interfaces (14-02-2024)
    “…Neuromorphic light sensors with analogue-domain image processing capability hold promise for overcoming the energy efficiency limitations and latency of von…”
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  15. 15

    Artificial synapse arrays based on SiOx/TiOx memristive crossbar with high uniformity for neuromorphic computing by Leng, Kangmin, Yu, Xinyue, Ma, Zhongyuan, Li, Wei, Xu, Jun, Xu, Ling, Chen, Kunji

    Published in Applied physics letters (24-01-2022)
    “…As the key of artificial synapse networks, memristive devices play the most important role to construct an artificial synapse because of their biological…”
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  16. 16

    Nanoconfinement effects on CuBi3 alloy catalyst for efficient CO2 electroreduction to formic acid by Fu, Yao, Leng, Kangmin, Zhuo, Haiou, Liu, Wenlong, Liu, Lizhe, Zhou, Gang, Tang, Jiancheng

    Published in Journal of CO2 utilization (01-04-2023)
    “…Electrochemical reduction reaction of CO2 (CO2RR) toward chemical and fuel production is a compelling component of the new energy system. The dual-metal site…”
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  17. 17

    Nonintrusive Monitoring of Mental Fatigue Status Using Epidermal Electronic Systems and Machine-Learning Algorithms by Zeng, Zhikang, Huang, Zhao, Leng, Kangmin, Han, Wuxiao, Niu, Hao, Yu, Yan, Ling, Qing, Liu, Jihong, Wu, Zhigang, Zang, Jianfeng

    Published in ACS sensors (22-05-2020)
    “…Mental fatigue, characterized by subjective feelings of “tiredness” and “lack of energy”, can degrade individual performance in a variety of situations, for…”
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  18. 18

    Light‐Controlled Ferromagnetism in Porphyrin Functionalized Ultrathin FeS Nanosheets by Zhou, Gang, Li, Tinghui, Wu, Yuying, Wang, Peifang, Leng, Kangmin, Liu, Chongchong, Shan, Yun, Liu, Lizhe

    Published in Advanced optical materials (01-08-2020)
    “…The intrinsically weak photomagnetic interaction makes it difficult to realize effectively light‐controlled magnetic structure transformation. Here…”
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  19. 19

    Tracing the Si Dangling Bond Nanopathway Evolution ina-SiN x :H Resistive Switching Memory by the Transient Current by Chen, Tong, Leng, Kangmin, Ma, Zhongyuan, Jiang, Xiaofan, Chen, Kunji, Li, Wei, Xu, Jun, Xu, Ling

    Published in Nanomaterials (Basel, Switzerland) (24-12-2022)
    “…With the big data and artificial intelligence era coming, SiN -based resistive random-access memories (RRAM) with controllable conductive nanopathways have a…”
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    Journal Article
  20. 20

    Tracing the Si Dangling Bond Nanopathway Evolution ina-SiN[sub.x]:H Resistive Switching Memory by the Transient Current by Chen, Tong, Leng, Kangmin, Ma, Zhongyuan, Jiang, Xiaofan, Chen, Kunji, Li, Wei, Xu, Jun, Xu, Ling

    Published in Nanomaterials (Basel, Switzerland) (01-12-2022)
    “…With the big data and artificial intelligence era coming, SiN[sub.x] -based resistive random-access memories (RRAM) with controllable conductive nanopathways…”
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    Journal Article