Search Results - "Leisner, Malte"
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Macroporous Semiconductors
Published in Materials (07-05-2010)“…Pores in single crystalline semiconductors come in many forms (e.g., pore sizes from 2 nm to > 10 µm; morphologies from perfect pore crystal to fractal) and…”
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Journal Article Book Review -
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New Applications of Electrochemically Produced Porous Semiconductors and Nanowire Arrays
Published in Nanoscale research letters (15-06-2010)“…The growing demand for electro mobility together with advancing concepts for renewable energy as primary power sources requires sophisticated methods of energy…”
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Journal Article -
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FFT impedance spectroscopy analysis of the growth of anodic oxides on (1 0 0) p-Si for various solvents
Published in Journal of electroanalytical chemistry (Lausanne, Switzerland) (15-04-2008)“…The growth of anodic oxides on (1 0 0) p-Si under galvanostatic conditions has been analyzed with in-situ FFT impedance spectroscopy (FFTIS) and…”
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Pores in n-Type InP: A Model System for Electrochemical Pore Etching
Published in Nanoscale research letters (14-05-2010)“…The growth mechanism of currentline-oriented pores in n-type InP has been studied by Fast-Fourier-Transform Impedance Spectroscopy (FFT IS) applied in situ…”
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Journal Article -
5
New Applications of Electrochemically Produced Porous Semiconductors and Nanowire Arrays
Published in Nanoscale research letters (15-06-2010)“…The growing demand for electro mobility together with advancing concepts for renewable energy as primary power sources requires sophisticated methods of energy…”
Get full text
Journal Article -
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Pores in n-Type InP: A Model System for Electrochemical Pore Etching
Published in Nanoscale research letters (14-05-2010)“…The growth mechanism of currentline-oriented pores in n -type InP has been studied by Fast-Fourier-Transform Impedance Spectroscopy (FFT IS) applied in situ…”
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Influence of the doping concentration on crystallographic pore growth on n-type InP and GaAs
Published in Physica status solidi. A, Applications and materials science (01-06-2011)“…The growth of crystallographical pores (crysto pores) in n‐type InP and GaAs has been investigated in detail in this work. The dependence on several…”
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How to make single small holes with large aspect ratios
Published in Physica status solidi. PSS-RRL. Rapid research letters (01-03-2009)“…In many areas of research a need for single small holes with diameters from a few nm to several μm and large aspect ratios exists that is hard to meet with…”
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Extra bright high power laser bars
Published in 2015 IEEE High Power Diode Lasers and Systems Conference (HPD) (01-10-2015)“…We present improvements of the lateral beam divergence and brightness of gain-guided mini-bars for emission at 976nm at highest brightness levels. The beam…”
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Conference Proceeding Journal Article