Vertical-cavity surface-emitting lasers flip-chip bonded to gigabit-per-second CMOS circuits

We describe the first integration of vertical-cavity surface-emitting laser arrays with gigabit-per-second CMOS circuits via flip-chip bonding.

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Bibliographic Details
Published in:	IEEE photonics technology letters Vol. 11; no. 1; pp. 128 - 130
Main Authors:	Krishnamoorthy, A.V., Chirovsky, L.M.F., Hobson, W.S., Leibengath, R.E., Hui, S.P., Zydzik, G.J., Goossen, K.W., Wynn, J.D., Tseng, B.J., Lopata, J., Walker, J.A., Cunningham, J.E., D'Asaro, L.A.
Format:	Journal Article
Language:	English
Published:	IEEE 01-01-1999
Subjects:	Arrays Bonding Circuit testing Circuits CMOS CMOS technology Gallium arsenide Integrated circuit technology Optical arrays Optical interconnections Photonics Surface emitting lasers Vertical cavity surface emission lasers Vertical cavity surface emitting lasers Very large scale integration
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Description
Summary:	We describe the first integration of vertical-cavity surface-emitting laser arrays with gigabit-per-second CMOS circuits via flip-chip bonding.
Bibliography:	ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23
ISSN:	1041-1135 1941-0174
DOI:	10.1109/68.736418